1. Carbon reactions in reactive ion etched silicon

   • J. L. Benton
   • J. Michel
   • R. A. Gottscho

   OriginalPaper Pages: 643 - 647

2. Diffusion induced disorder in AlAs-GaAs superlattice by transition elements

   • H. P. Ho
   • I. Harrison
   • M. Henini

   OriginalPaper Pages: 649 - 652

3. Investigation of pyroelectric characteristics of 0.8 Pb (Zn_1/3Nb_2/3)O₃ - 0.1 Pb TiO₃ - 0.1 BaTiO₃ ceramics with special reference to uncooled infrared detection

   • K. K. Deb

   OriginalPaper Pages: 653 - 658

4. Changes in the opto-electronic properties of CuInSe₂ following ion implantation

   • R. D. Tomlinson
   • A. E. Hill
   • M. V. Yakushev

   OriginalPaper Pages: 659 - 663

5. Mechanical integrity of polysilicon films exposed to hydrofluoric acid solutions

   • James A. Walker
   • Kaigham J. Gabriel
   • Mehran Mehregany

   OriginalPaper Pages: 665 - 670

6. Hall effect analysis of high purity p-type GaAs grown by metalorganic chemical vapor deposition

   • M. H. Kim
   • S. S. Bose
   • G. E. Stillman

   OriginalPaper Pages: 671 - 679

7. A technique for calibrating an electron-beam evaporator x-ray source

   • Robert J. Kinzig

   OriginalPaper Pages: 681 - 686

8. Photoluminescence studies on InGaAlP layers grown by low-pressure metalorganic chemical vapor deposition

   • S. Naritsuka
   • Y. Nishikawa
   • Y. Kokubun

   OriginalPaper Pages: 687 - 690

9. DX centers in Al_xGa_1-xAs bulk alloy, AlAs/GaAs ordered, and disordered superlattices

   • Makoto Kasu
   • Rangaiya Rao
   • Akio Sasaki

   OriginalPaper Pages: 691 - 693

10. Selective photochemical etching by enhanced carrier recombination: Process control using Raman spectroscopy

    • C. I. H. Ashby
    • D. R. Myers

    OriginalPaper Pages: 695 - 699