1. Determination of the liquidus lines and isotherms of the Hg-Zn-Te system by a modified direct observation method

   • YI Gao Sha
   • Heribert Wiedemeier

   OriginalPaper Pages: 217 - 221

2. Effect of radial growth rate variation on resonant tunneling diode current-Voltage characteristics

   • E. T. Koenig
   • C. I. Huang
   • D. C. Reynolds

   OriginalPaper Pages: 223 - 225

3. A model for high temperature growth of CdTe by metal organic chemical vapor deposition

   • N. Amir
   • D. Goren
   • Y. Nemirovsky

   OriginalPaper Pages: 227 - 230

4. Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution

   • Jin-Ho Choi
   • Ho-Jun Song
   • Choong-Ki Kim

   OriginalPaper Pages: 231 - 235

5. Pd/Zn/Pd/Au ohmic contacts to ρ-Type InP

   • D. G. Ivey
   • P. Jian
   • C. Blaauw

   OriginalPaper Pages: 237 - 246

6. Growth and characterization of Ga₂Te₃ films by metalorganic molecular beam epitaxy

   • N. Teraguchi
   • F. Kato
   • K. Takahashi

   OriginalPaper Pages: 247 - 250

7. A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor deposition

   • XiaoWei Ren
   • Mehmet C. Ozturk
   • Edward Niccolian

   OriginalPaper Pages: 251 - 259

8. Ultra-Shallow junctions in silicon using amorphous and polycrystalline silicon solid diffusion sources

   • Keunhyung Park
   • Shubneesh Batra
   • Gayle Lux

   OriginalPaper Pages: 261 - 265

9. Silicon on insulator material by Wafer Bonding

   • Christine Harendt
   • Charles E. Hunt
   • Elisabeth Penteker

   OriginalPaper Pages: 267 - 277

10. Cleaning and passivation of the Si(100) surface by low temperature remote hydrogen plasma treatment for Si epitaxy

    • T. Hsu
    • B. Anthony
    • C. Magee

    OriginalPaper Pages: 279 - 287