1. Protection of InP EPI-ready wafers by controlled oxide growth

   • D. Gallet
   • M. Gendry
   • D. Lecrosnier

   OriginalPaper Pages: 963 - 965

2. MLEK crystal growth of (100) indium phosphide

   • David F. Bliss
   • Robert M. Hilton
   • Joseph A. Adamski

   OriginalPaper Pages: 967 - 971

3. Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP

   • J. H. Marsh
   • S. A. Bradshaw
   • R. W. Glew

   OriginalPaper Pages: 973 - 978

4. The growth of high quality InP/InGaAs/InGaAsP interfaces by CBE for SCH multi-quantum well lasers

   • M. E. Sherwin
   • D. T. Nichols
   • G. I. Haddad

   OriginalPaper Pages: 979 - 982

5. Systematic optical and x-ray study of In _x Ga_1−x As on InP

   • J. P. Estrera
   • W. M. Duncan
   • E. A. Beam

   OriginalPaper Pages: 983 - 987

6. MBE growth and electrical behaviour of single and double Si δ-doped InGaAs-layers

   • W. Passenberg
   • H. G. Bach
   • J. Böttcher

   OriginalPaper Pages: 989 - 991

7. Long wavelength quantum well lasers: Synopsis of the RACE “AQUA” project: MOVPE/MBE/GSMBE for InGaAsP/InP and InGaAlAs/InP high speed MQW DFB lasers

   • Peter Speier

   OriginalPaper Pages: 993 - 999

8. Characteristics of Au/n-InP Schottky junctions formed on H₂- and PH₃-plasma treated surfaces

   • Takashi Sugino
   • Hiroyuki Yamamoto
   • Junji Shirafuji

   OriginalPaper Pages: 1001 - 1006

9. Development of high quality InP bulk crystals

   • O. Oda
   • K. Kainosho
   • T. Fukui

   OriginalPaper Pages: 1007 - 1011

10. Growth of low dislocation density InP single crystals by the phosphorus vapor controlled LEC method

    • K. Kohiro
    • K. Kainosho
    • O. Oda

    OriginalPaper Pages: 1013 - 1017

11. High-efficiency, thin-film InP concentrator solar cells

    • M. W. Wanlass
    • T. J. Coutts
    • G. S. Horner

    OriginalPaper Pages: 1019 - 1024

12. Semi-insulating InP: Fe regrowth by the hydride VPE technique aroundp-InP substrate laser mesas fabricated by reactive ion etching

    • S. Lourdudoss
    • S. Nilsson
    • B. Holmberg

    OriginalPaper Pages: 1025 - 1027

13. Fabrication of a GaAs-on-InP, four channel variable bandwidth optical receiver, opto-electronic integrated circuit (OEIC), using a seeded-mask technology

    • P. J. O’sullivan
    • D. A. Allan
    • R. Young

    OriginalPaper Pages: 1029 - 1031

14. Selective growth of InP in the low pressure hydride VPE system

    • R. Beccard
    • A. Dehe
    • P. Speier

    OriginalPaper Pages: 1033 - 1036

15. Comparison of Zn and Mg incorporation in MOVPE InP/GaInAsP laser structures

    • E. Veuhoff
    • H. Baumeister
    • R. Treichler

    OriginalPaper Pages: 1037 - 1041

16. Influence of iron content on electrical characteristics and thermal stability of LEC indium phosphide

    • R. Fornari

    OriginalPaper Pages: 1043 - 1048

17. Ultra-thin Ga_xIn_1−xAs/InP (0≤x≤0.47) layer growth by chemical beam epitaxy

    • Noriyuki Yokouchi
    • Toshi K. Uchida
    • Kenichi Iga

    OriginalPaper Pages: 1049 - 1052

18. Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics

    • M. A. Tischler
    • B. D. Parker
    • M. S. Goorsky

    OriginalPaper Pages: 1053 - 1057

19. A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar⁺ ion beam sputtering

    • G. Stareev
    • A. Umbach

    OriginalPaper Pages: 1059 - 1063

20. Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control

    • G. Hirt
    • D. Hofmann
    • G. Müller

    OriginalPaper Pages: 1065 - 1068

21. Ohmic contacts to InP-based materials induced by means of rapid thermal low pressure (metallorganic) chemical vapor deposition technique

    • A. Katz

    OriginalPaper Pages: 1069 - 1073

22. Orthorhombic distortion of mismatched In _X Ga_1−X As/InP heterostructures

    • Brian R. Bennett
    • Jesús A. Del Alamo

    OriginalPaper Pages: 1075 - 1079

23. Very high electron mobility In_0.8Ga_0.2As heterostructure grown by molecular beam epitaxy

    • Munecazu Tacano
    • Yoshinobu Sugiyama
    • Yoshiki Ueno

    OriginalPaper Pages: 1081 - 1085

24. High purity InP grown by chemical beam epitaxy

    • A. Rudra
    • J. F. Carlin
    • M. Ilegems

    OriginalPaper Pages: 1087 - 1090

25. Optical and electrical characterization ofn- andp-type Fe-doped InP

    • F. Mosel
    • A. Seidl
    • G. Müller

    OriginalPaper Pages: 1091 - 1094

26. Lattice dilation acrossn-InP-substrates and its influence on material properties of InP/InGaAsP- double-heterostructures

    • A. Knauer
    • R. Staske
    • R. Kittner

    OriginalPaper Pages: 1095 - 1098

27. In situ optical monitoring of OMVPE deposition of AlGaAs by laser reflectance

    • H. Sankur
    • W. Southwell
    • R. Hall

    OriginalPaper Pages: 1099 - 1104

28. Low-temperature CVD TiN as a diffusion barrier between gold and silicon

    • Joshua N. Musher
    • Roy G. Gordon

    OriginalPaper Pages: 1105 - 1107

29. Growth and characterization of indium arsenide thin films

    • D. L. Partin
    • L. Green
    • C. M. Thrush

    OriginalPaper Pages: 1109 - 1115

30. Photoluminescence excitation spectroscopy of InAs_0.67P_0.33/InP strained single quantum wells

    • R. P. Schneider
    • B. W. Wessels

    OriginalPaper Pages: 1117 - 1123

31. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

    • R. M. Fletcher
    • C. P. Kuo
    • V. M. Robbins

    OriginalPaper Pages: 1125 - 1130