1. Use of test structures and results of electrical tests for silicon-on-sapphire integrated circuit processes

   • P. A. Crossley
   • W. E. Ham

   OriginalPaper Pages: 465 - 465

2. Use of test structures and results of electrical tests for silicon-on-sapphire integrated circuit processes

   • P. A. Crossley
   • W. E. Ham

   OriginalPaper Pages: 465 - 483

3. Solute diffusion growth of Ga_xIn_1−xSb

   • J. F. Miller
   • R. D. Baxter

   OriginalPaper Pages: 485 - 494

4. Physical properties of the As₂ (Se,Te)₃ glasses (Review article)

   • David D. Thornburg

   ReviewPaper Pages: 495 - 532

5. Annealing behavior of electrodeposited gold containing entrapments

   • K. C. Joshi
   • R. C. Sanwald

   OriginalPaper Pages: 533 - 552

6. Effect of Pb- and Te-saturation on carrier concentrations in impurity-doped PbTe

   • A. J. Strauss

   OriginalPaper Pages: 553 - 569

7. Electroluminescent shockley diodes of GaAs and GaAs_l−x, P_x

   • C. J. Nuese
   • J. J. Gannon
   • C. R. Wronski

   OriginalPaper Pages: 571 - 599

8. The melt growth and doping of CdGeP₂

   • J. D. Wiley
   • E. Buehler
   • J. H. Wernick

   OriginalPaper Pages: 601 - 607

9. Novel garnet then film optical waveguides

   • L. K. Shick
   • C. D. Brandie
   • M. A. Karr

   OriginalPaper Pages: 609 - 615

10. Proceedings of the 1973 Electronic Materials Conference

    Report Pages: 617 - 617