1. Effect of total pressure on the uniformity of epitaxial GaAs films grown in the Ga-HCl-AsH₃-H₂ system

   • N. Pütz
   • A. Sauerbrey
   • P. Balk

   OriginalPaper Pages: 645 - 653

2. Electrical characterization of high purity InGaAsP alloys

   • J. L. Benchimol
   • D. Scalbert}
   • M. Quillec

   OriginalPaper Pages: 655 - 666

3. Photoluminescence Studies of CuInS₂-CuInSe₂ Alloy Crystals

   • P. Lange
   • H. Neff
   • K. J. Bachmann

   OriginalPaper Pages: 667 - 676

4. The lattice constants of CuInSe₂

   • M. L. Fearheiley
   • K. J. Bachmann
   • C. R. Herrington

   OriginalPaper Pages: 677 - 683

5. Microwave plasma oxidation of silicon

   • C. Y. Fu
   • J. C. Mikkelsen
   • M. J. Thompson

   OriginalPaper Pages: 685 - 706

6. Mosfet fabrication using ion beam nitridation

   • John R. Troxell

   OriginalPaper Pages: 707 - 728

7. Liquid phase epitaxial Ga_1-xIn_xAs_ySb_1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

   • J. C. DeWinter
   • M. A Pollack
   • J. L. Zyskind

   OriginalPaper Pages: 729 - 747

8. Sulfur incorporation during epitaxial growth of inp in the IN-HC1-PH₃-H₂ system

   • D. Grundmann
   • H. Jürgensen
   • P. Balk

   OriginalPaper Pages: 749 - 767

9. Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactor

   • H. Kanber
   • T. Zielinski
   • J. M. Whelan

   OriginalPaper Pages: 769 - 781