Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface A. A. FuksA. V. BakulinA. V. Postnikov NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION) 03 March 2020 Pages: 1 - 10
Revisiting the Nature of the Anomalous Temperature Dependence of the Hall Coefficient Observed for Semiconductor Crystals of Bi2Te3–Sb2Te3 Solid Solutions N. P. Stepanov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 11 - 14
Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities M. M. MezdroginaA. Ya. VinogradovYu. V. Kozhanova ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 15 - 18
Photodielectric Effect in Bi12SiO20 Sillenite Crystals V. T. AvanesyanI. V. Piskovatskova ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 19 - 21
Anticorrelation between the Intensity of Stimulated Picosecond Emission in GaAs and the Characteristic Time of Charge-Carrier Cooling N. N. AgeevaI. L. BronevoiA. N. Krivonosov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 22 - 27
On the Growth and Properties of FeIn2S3.6Se0.4 Single Crystals I. V. Bodnar ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 28 - 32
High-Frequency Conductivity of Disordered Semiconductors in the Region of the Transition from the Linear to Quadratic Frequency Dependence M. A. OrmontI. P. Zvyagin ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 33 - 39
Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study Jamal A. Talla ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 40 - 45
Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies V. V. EmtsevN. V. AbrosimovD. S. Poloskin ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 46 - 54
Study of Electrical Conductivity of La2S3 V. V. KaminskiiM. M. KazaninA. D. Polushina ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 55 - 57
First Principles Study on Electronic Structure and Optical Properties of Ternary Semiconductor InxAl1 –xP Alloys Farid OkbiSaid LakelK. Almi ELECTRONIC PROPERTIES OF SEMICONDUCTORS 03 March 2020 Pages: 58 - 66
Study of the Luminescence Power of Excitons and Impurity–Defect Centers Excited via Two-Photon Absorption A. A. GladilinV. P. DanilovP. P. Pashinin SPECTROSCOPY, INTERACTION WITH RADIATION 03 March 2020 Pages: 67 - 72
Hydrothermal Growth of Undoped and Zn-Doped SnO Nanocrystals: A Frequency Dependence of AC Conductivity and Dielectric Response Studies A. Viswanath GowdR. Thangavel SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 March 2020 Pages: 73 - 76
Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base Soumava GhoshBratati MukhopadhyayGopa Sen SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 March 2020 Pages: 77 - 84
Carbon Nanotubes and Graphene Powder Based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors Muhammad Tariq Saeed ChaniKhasan S. KarimovAbdullah M. Asiri SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 03 March 2020 Pages: 85 - 90
Comparison of the Effects of Environmental Treatments on Hydrogen Concentration and Energy Gap Variations of Hydrogenated Amorphous and Polymorphous Silicon Films Prepared by PECVD Technique Alireza KeramatzadehAbdolnabi KosarianHooman Kaabi AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 03 March 2020 Pages: 91 - 101
Anomalous Edge Emission from Zinc Selenide Heavily Doped with Oxygen N. K. MorozovaI. N. Miroshnikova MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 03 March 2020 Pages: 102 - 107
Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell D. M. LeganO. P. PchelyakovV. V. Preobrazhenskii PHYSICS OF SEMICONDUCTOR DEVICES 03 March 2020 Pages: 108 - 111
Multidimensional dU/dT Effect in High-Power Thyristors S. N. YurkovT. T. MnatsakanovA. G. Tandoev PHYSICS OF SEMICONDUCTOR DEVICES 03 March 2020 Pages: 112 - 116
Temperature Dependence of Losses in Mechanical Resonator Fabricated via the Direct Bonding of Silicon Strips L. G. ProkhorovA. V. SvetaevV. P. Mitrofanov PHYSICS OF SEMICONDUCTOR DEVICES 03 March 2020 Pages: 117 - 121
High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel A. I. MikhaylovA. V. AfanasyevA. Schöner PHYSICS OF SEMICONDUCTOR DEVICES 03 March 2020 Pages: 122 - 126
Strong Coupling of Excitons in Hexagonal GaN Microcavities A. V. BelonovskiiG. PozinaM. A. Kaliteevski PHYSICS OF SEMICONDUCTOR DEVICES 03 March 2020 Pages: 127 - 130
High-Performance Growth of Terahertz Quantum Cascade Laser Structures by Solid Source MBE Tao JiangChangle ShenWeidong Wu PHYSICS OF SEMICONDUCTOR DEVICES 03 March 2020 Pages: 131 - 136
Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions M. S. TuzhilkinP. G. BespalovaA. I. Titov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 03 March 2020 Pages: 137 - 143
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode N. D. Il’inskayaN. M. LebedevaA. S. Potapov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 03 March 2020 Pages: 144 - 149
Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures E. V. EdinachA. D. KrivoruchkoP. G. Baranov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 03 March 2020 Pages: 150 - 156
Erratum to: First-Principles Investigation of Electronic Properties of GaAsxSb1 – x Ternary Alloys A. K. SinghDevesh ChandraAmit Rathi Erratum 03 March 2020 Pages: 157 - 157