Effect of a Nickel Impurity on the Galvanomagnetic Properties and Electronic Structure of PbTe E. P. SkipetrovB. B. KovalevV. E. Slynko ELECTRONIC PROPERTIES OF SEMICONDUCTORS 09 October 2020 Pages: 1171 - 1179
Features of the Electrical-Conductivity Mechanism in γ-Irradiated TlInSe2 Single Crystals under Hydrostatic Pressure R. S. MadatovSh. G. GasimovS. H. Jabarov ELECTRONIC PROPERTIES OF SEMICONDUCTORS 09 October 2020 Pages: 1180 - 1184
Elastic and Thermal Properties of Orthorhombic and Tetragonal Phases of Cu2ZnSiSe4 by First Principles Calculations Yan Li GaoWen Shui GuanYu Jing Dong ELECTRONIC PROPERTIES OF SEMICONDUCTORS 09 October 2020 Pages: 1185 - 1190
Structure and Photoelectric Properties of PbSe Films Deposited in the Presence of Ascorbic Acid L. N. MaskaevaV. M. YurkO. A. Lipina SURFACES, INTERFACES, AND THIN FILMS 09 October 2020 Pages: 1191 - 1197
Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy O. S. KomkovS. A. KhakhulinS. V. Sorokin SURFACES, INTERFACES, AND THIN FILMS 09 October 2020 Pages: 1198 - 1204
Electron-Population Bragg Grating Induced in an AlxGa1 –xAs–GaAs–AlxGa1 –xAs Heterostructure by Intrinsic Stimulated Picosecond Emission N. N. AgeevaI. L. BronevoiA. N. Krivonosov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 09 October 2020 Pages: 1205 - 1214
Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation O. V. Aleksandrov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 09 October 2020 Pages: 1215 - 1219
Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature O. F. FarhatM. HishamNyan J. Mohammed SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 09 October 2020 Pages: 1220 - 1223
Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3 V. M. KalyginaV. I. NikolaevP. N. Butenko MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1224 - 1229
Structure, Optical, and Photoelectric Properties of Lead-Sulfide Films Doped with Strontium and Barium L. N. MaskaevaE. V. MostovshchikovaV. F. Markov MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1230 - 1240
Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor A. I. IsayevH. I. MammadovaR. I. Alekberov MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1241 - 1246
Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells I. E. SvitsiankouV. N. PavlovskiiS. O. Kognovitckii MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 09 October 2020 Pages: 1247 - 1253
External Quantum Efficiency of Bifacial HIT Solar Cells A. V. ErmachikhinYu. V. VorobyovV. G. Litvinov PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1254 - 1259
Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures M. M. SobolevF. Y. Soldatenkov PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1260 - 1266
Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them R. A. SaliiS. A. MintairovN. A. Kalyuzhnyy PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1267 - 1275
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy S. A. BlokhinS. N. NevedomskyV. M. Ustinov PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1276 - 1283
Analysis of the Temperature Dependence of Diode Ideality Factor in InGaN-Based UV-A Light-Emitting Diode P. DalapatiN. B. ManikA. N. Basu PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1284 - 1289
Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate Dielectrics L. RameshS. MoparthiG. K. Saramekala PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1290 - 1295
Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS M. Gassoumi PHYSICS OF SEMICONDUCTOR DEVICES 09 October 2020 Pages: 1296 - 1303
Physicochemical Interactions in the GeSb2Te4–PbSb2Te4 System G. R. GurbanovM. B. Adygezalova FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 09 October 2020 Pages: 1304 - 1309
Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures L. K. MarkovI. P. SmirnovaA. S. Pavluchenko FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 09 October 2020 Pages: 1310 - 1314
Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures O. M. SreseliM. A. ElistratovaA. V. Ershov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 09 October 2020 Pages: 1315 - 1319
Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains N. V. SibirevYu. S. BerdnikovV. N. Sibirev XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1320 - 1324
Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties A. E. KlimovA. N. AkimovV.S. Epov XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1325 - 1331
Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition A. A. SushkovD. A. PavlovE. A. Pitirimova XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1332 - 1335
Behavior of Lithium Donors in Bulk Single-Crystal Isotopically Pure 28Si1 –x72Gex Alloys A. A. EzhevskiiP. G. SennikovN. V. Abrosimov XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1336 - 1340
Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells M. V. DorokhinP. B. DeminaM. A. G. Balanta XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1341 - 1346
Relaxation of the Excited States of Arsenic in Strained Germanium K. A. KovalevskyYu. Yu. ChoporovaV. N. Shastin XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1347 - 1351
Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals A. N. YablonskiyA. V. NovikovZ. F. Krasilnik XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1352 - 1359
Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range D. I. DyukovA. G. FefelovS. V. Obolensky XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1360 - 1364
Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window L. A. KushkovV.V. UtochkinS. V. Morozov XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1365 - 1370
Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion V. V. UtochkinV. Ya. AleshkinS. V. Morozov XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020 09 October 2020 Pages: 1371 - 1375