Superionic Conductivity of (TlGaSe2)1 – x(TlInS2)x Solid Solutions R. M. SardarliA. P. AbdullayevA. A. Orudjeva ELECTRONIC PROPERTIES OF SEMICONDUCTORS 06 September 2018 Pages: 1229 - 1232
Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering M. M. MezdroginaA. Ja. VinogradovYu. V. Kozhanova SPECTROSCOPY, INTERACTION WITH RADIATION 06 September 2018 Pages: 1233 - 1237
Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering I. E. SvitsiankouV. N. PavlovskiiM. V. Yakushev SPECTROSCOPY, INTERACTION WITH RADIATION 06 September 2018 Pages: 1238 - 1243
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities M. A. MintairovV. V. EvstropovN. A. Kalyuzhnyy SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 06 September 2018 Pages: 1244 - 1248
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters S. A. MintairovN. A. KalyuzhnyyA. E. Zhukov SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 06 September 2018 Pages: 1249 - 1254
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase on ncl-Si Growth in an a-SiOx:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %) Yu. K. UndalovE. I. TerukovI. N. Trapeznikova AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 06 September 2018 Pages: 1255 - 1263
Simulation of Electron and Hole States in Si Nanocrystals in a SiO2 Matrix: Choice of Parameters of the Empirical Tight-Binding Method A. V. BelolipetskiyM. O. NestoklonI. N. Yassievich MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 06 September 2018 Pages: 1264 - 1268
Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier N. A. Torkhov PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1269 - 1292
Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs V. V. VolkovL. M. KoganA. E. Yunovich PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1293 - 1297
Analysis of the Features of Hot-Carrier Degradation in FinFETs A. A. MakarovS. E. TyaginovT. Grasser PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1298 - 1302
Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures E. A. GrebenshchikovaKh. M. SalikhovYu. P. Yakovlev PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1303 - 1306
Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes P. A. IvanovA. S. PotapovT. P. Samsonova PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1307 - 1310
Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates M. V. MaximovA. M. NadtochiyA. E. Zhukov PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1311 - 1316
Specific Features of the IR Reflectance and Raman Spectra of Sb2Te3 – xSex Crystals S. A. NemovV. D. AndreevaA. A. Allahkhah PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1317 - 1322
On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties I. V. BodnarS. A. DetkovYu. A. Fedotova FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1323 - 1326
Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films A. P. RyaguzovR. R. NemkayevaN. R. Guseinov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1327 - 1333
Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties L. N. MaskaevaE. A. FedorovaA. V. Pozdin FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1334 - 1340
Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide V. P. PopovV. A. AntonovV. I. Vdovin FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1341 - 1348
Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films L. K. MarkovA. S. PavluchenkoS. I. Pavlov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1349 - 1356
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography W. V. LundinA. F. TsatsulnikovV. P. Evtikhiev FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1357 - 1362
Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions L. B. KarlinaA. S. VlasovA. B. Smirnov FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1363 - 1368