1. Superionic Conductivity of (TlGaSe₂)_1 – x(TlInS₂)_x Solid Solutions

   • R. M. Sardarli
   • A. P. Abdullayev
   • A. A. Orudjeva

   ELECTRONIC PROPERTIES OF SEMICONDUCTORS 06 September 2018 Pages: 1229 - 1232

   

2. Formation of Luminescence Spectra and Emission Intensity in the UV and Visible Spectral Regions for n-ZnO/p-GaN and n-ZnO/p-ZnO Structures when Depositing ZnO Films by High-Frequency Magnetron Sputtering

   • M. M. Mezdrogina
   • A. Ja. Vinogradov
   • Yu. V. Kozhanova

   SPECTROSCOPY, INTERACTION WITH RADIATION 06 September 2018 Pages: 1233 - 1237

   

3. Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se₂ Films Deposited by Magnetron-Assisted Sputtering

   • I. E. Svitsiankou
   • V. N. Pavlovskii
   • M. V. Yakushev

   SPECTROSCOPY, INTERACTION WITH RADIATION 06 September 2018 Pages: 1238 - 1243

   

4. Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities

   • M. A. Mintairov
   • V. V. Evstropov
   • N. A. Kalyuzhnyy

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 06 September 2018 Pages: 1244 - 1248

   

5. Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters

   • S. A. Mintairov
   • N. A. Kalyuzhnyy
   • A. E. Zhukov

   SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA 06 September 2018 Pages: 1249 - 1254

   

6. Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH₄–Ar–O₂) Gas Phase on ncl-Si Growth in an a-SiO_x:H matrix (\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\) = 15.5 mol %)

   • Yu. K. Undalov
   • E. I. Terukov
   • I. N. Trapeznikova

   AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS 06 September 2018 Pages: 1255 - 1263

   

7. Simulation of Electron and Hole States in Si Nanocrystals in a SiO₂ Matrix: Choice of Parameters of the Empirical Tight-Binding Method

   • A. V. Belolipetskiy
   • M. O. Nestoklon
   • I. N. Yassievich

   MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS 06 September 2018 Pages: 1264 - 1268

   

8. Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier

   • N. A. Torkhov

   PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1269 - 1292

   

9. Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs

   • V. V. Volkov
   • L. M. Kogan
   • A. E. Yunovich

   PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1293 - 1297

   

10. Analysis of the Features of Hot-Carrier Degradation in FinFETs

    • A. A. Makarov
    • S. E. Tyaginov
    • T. Grasser

    PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1298 - 1302

    

11. Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures

    • E. A. Grebenshchikova
    • Kh. M. Salikhov
    • Yu. P. Yakovlev

    PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1303 - 1306

    

12. Effect of Low-Dose Proton Irradiation on the Electrical Characteristics of 4H-SiC Junction Diodes

    • P. A. Ivanov
    • A. S. Potapov
    • T. P. Samsonova

    PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1307 - 1310

    

13. Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates

    • M. V. Maximov
    • A. M. Nadtochiy
    • A. E. Zhukov

    PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1311 - 1316

    

14. Specific Features of the IR Reflectance and Raman Spectra of Sb₂Te_3 – xSe_x Crystals

    • S. A. Nemov
    • V. D. Andreeva
    • A. A. Allahkhah

    PHYSICS OF SEMICONDUCTOR DEVICES 06 September 2018 Pages: 1317 - 1322

    

15. On the Growth of FeIn₂S₂Se₂ Single Crystals and the Study of their Properties

    • I. V. Bodnar
    • S. A. Detkov
    • Yu. A. Fedotova

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1323 - 1326

    

16. Influence of the Synthesis Conditions and Tin Nanoparticles on the Structure and Properties of a-C:H〈Sn〉 Composite Thin Films

    • A. P. Ryaguzov
    • R. R. Nemkayeva
    • N. R. Guseinov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1327 - 1333

    

17. Copper(I) Selenide Thin Films: Composition, Morphology, Structure, and Optical Properties

    • L. N. Maskaeva
    • E. A. Fedorova
    • A. V. Pozdin

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1334 - 1340

    

18. Positive Charge in SOS Heterostructures with Interlayer Silicon Oxide

    • V. P. Popov
    • V. A. Antonov
    • V. I. Vdovin

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1341 - 1348

    

19. Study of the Effective Refractive Index Profile in Self-Assembling Nanostructured ITO Films

    • L. K. Markov
    • A. S. Pavluchenko
    • S. I. Pavlov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1349 - 1356

    

20. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography

    • W. V. Lundin
    • A. F. Tsatsulnikov
    • V. P. Evtikhiev

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1357 - 1362

    

21. Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions

    • L. B. Karlina
    • A. S. Vlasov
    • A. B. Smirnov

    FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES 06 September 2018 Pages: 1363 - 1368