1. Diffusion of interstitial magnesium in dislocation-free silicon

   • V. B. Shuman
   • A. A. Lavrent’ev
   • L. M. Portsel

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 10 February 2017 Pages: 1 - 3

2. Investigations of CuFeS₂ semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field

   • V. L. Matukhin
   • A. I. Pogoreltsev
   • E. I. Terukov

   Electronic Properties of Semiconductors 10 February 2017 Pages: 4 - 7

3. Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices

   • E. Yu. Zhdanov
   • A. G. Pogosov
   • A. K. Bakarov

   Electronic Properties of Semiconductors 10 February 2017 Pages: 8 - 13

4. Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors

   • A. E. Dubinov
   • I. N. Kitayev

   Electronic Properties of Semiconductors 10 February 2017 Pages: 14 - 17

5. Lifetime of excess electrons in Cu–Zn–Sn–Se powders

   • G. F. Novikov
   • M. V. Gapanovich
   • Liann-Be Chang

   Electronic Properties of Semiconductors 10 February 2017 Pages: 18 - 22

6. Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface

   • V. L. Bekenev
   • S. M. Zubkova

   Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 23 - 33

7. On the growth, structure, and surface morphology of epitaxial CdTe films

   • I. R. Nuriyev
   • M. A. Mehrabova
   • N. G. Hasanov

   Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 34 - 37

8. Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

   • S. S. Krishtopenko
   • A. V. Ikonnikov
   • V. I. Gavrilenko

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 38 - 42

9. Spin-dependent tunneling recombination in heterostructures with a magnetic layer

   • K. S. Denisov
   • I. V. Rozhansky
   • E. Lähderanta

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 43 - 48

10. Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures

    • V. V. Bolotov
    • E. V. Knyazev
    • V. E. Roslikov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 49 - 53

11. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds

    • M. B. Karavaev
    • D. A. Kirilenko
    • M. V. Zamoryanskaya

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 54 - 60

12. Fabrication of oxide heterostructures for promising solar cells of a new generation

    • A. A. Bobkov
    • N. A. Lashkova
    • S. S. Nalimova

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 61 - 65

13. Optimization of the parameters of power sources excited by β-radiation

    • S. V. Bulyarskiy
    • A. V. Lakalin
    • V. V. Svetuhin

    Physics of Semiconductor Devices 10 February 2017 Pages: 66 - 72

14. Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

    • S. M. Nekorkin
    • B. N. Zvonkov
    • D. V. Ushakov

    Physics of Semiconductor Devices 10 February 2017 Pages: 73 - 77

15. Anodes for Li-ion batteries based on p-Si with self-organized macropores

    • N. E. Preobrazhenskiy
    • E. V. Astrova
    • V. V. Zhdanov

    Physics of Semiconductor Devices 10 February 2017 Pages: 78 - 87

16. Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells

    • S. B. Musalinov
    • A. P. Anzulevich
    • M. Z. Shvarts

    Physics of Semiconductor Devices 10 February 2017 Pages: 88 - 92

17. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

    • D. V. Rybalchenko
    • S. A. Mintairov
    • N. A. Kalyuzhnyy

    Physics of Semiconductor Devices 10 February 2017 Pages: 93 - 99

18. InGaN/GaN light-emitting diode microwires of submillimeter length

    • W. V. Lundin
    • S. N. Rodin
    • A. F. Tsatsulnikov

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 100 - 103

19. Surface texture of single-crystal silicon oxidized under a thin V₂O₅ layer

    • S. E. Nikitin
    • V. N. Verbitskiy
    • E. E. Terukova

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 104 - 109

20. Nanoscale Cu₂O films: Radio-frequency magnetron sputtering and structural and optical studies

    • D. A. Kudryashov
    • A. S. Gudovskikh
    • N. G. Filosofov

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 110 - 114

21. On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

    • V. V. Voronenkov
    • M. V. Virko
    • Y. G. Shreter

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 115 - 121

22. Epitaxial Al _x Ga_{1 – x} As:Mg alloys with different conductivity types

    • P. V. Seredin
    • A. S. Lenshin
    • Monika Rinke

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 122 - 130

23. PEALD grown high-k ZrO₂ thin films on SiC group IV compound semiconductor

    • A. G. Khairnar
    • V. S. Patil
    • A. M. Mahajan

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 131 - 133

24. Application of B₁₂N₁₂ and B₁₂P₁₂ as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study

    • Ali Shokuhi Rad

    Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 134 - 138