Diffusion of interstitial magnesium in dislocation-free silicon V. B. ShumanA. A. Lavrent’evL. M. Portsel Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 10 February 2017 Pages: 1 - 3
Investigations of CuFeS2 semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field V. L. MatukhinA. I. PogoreltsevE. I. Terukov Electronic Properties of Semiconductors 10 February 2017 Pages: 4 - 7
Ballistic magnetotransport in a suspended two-dimensional electron gas with periodic antidot lattices E. Yu. ZhdanovA. G. PogosovA. K. Bakarov Electronic Properties of Semiconductors 10 February 2017 Pages: 8 - 13
Two-tone nonlinear electrostatic waves in the quantum electron–hole plasma of semiconductors A. E. DubinovI. N. Kitayev Electronic Properties of Semiconductors 10 February 2017 Pages: 14 - 17
Lifetime of excess electrons in Cu–Zn–Sn–Se powders G. F. NovikovM. V. GapanovichLiann-Be Chang Electronic Properties of Semiconductors 10 February 2017 Pages: 18 - 22
Atomic and electronic structure of the CdTe(111)B–(2√3 × 4) orthogonal surface V. L. BekenevS. M. Zubkova Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 23 - 33
On the growth, structure, and surface morphology of epitaxial CdTe films I. R. NuriyevM. A. MehrabovaN. G. Hasanov Surfaces, Interfaces, and Thin Films 10 February 2017 Pages: 34 - 37
Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells S. S. KrishtopenkoA. V. IkonnikovV. I. Gavrilenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 38 - 42
Spin-dependent tunneling recombination in heterostructures with a magnetic layer K. S. DenisovI. V. RozhanskyE. Lähderanta Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 10 February 2017 Pages: 43 - 48
Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures V. V. BolotovE. V. KnyazevV. E. Roslikov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 49 - 53
Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds M. B. KaravaevD. A. KirilenkoM. V. Zamoryanskaya Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 54 - 60
Fabrication of oxide heterostructures for promising solar cells of a new generation A. A. BobkovN. A. LashkovaS. S. Nalimova Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 10 February 2017 Pages: 61 - 65
Optimization of the parameters of power sources excited by β-radiation S. V. BulyarskiyA. V. LakalinV. V. Svetuhin Physics of Semiconductor Devices 10 February 2017 Pages: 66 - 72
Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate S. M. NekorkinB. N. ZvonkovD. V. Ushakov Physics of Semiconductor Devices 10 February 2017 Pages: 73 - 77
Anodes for Li-ion batteries based on p-Si with self-organized macropores N. E. PreobrazhenskiyE. V. AstrovaV. V. Zhdanov Physics of Semiconductor Devices 10 February 2017 Pages: 78 - 87
Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells S. B. MusalinovA. P. AnzulevichM. Z. Shvarts Physics of Semiconductor Devices 10 February 2017 Pages: 88 - 92
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD D. V. RybalchenkoS. A. MintairovN. A. Kalyuzhnyy Physics of Semiconductor Devices 10 February 2017 Pages: 93 - 99
InGaN/GaN light-emitting diode microwires of submillimeter length W. V. LundinS. N. RodinA. F. Tsatsulnikov Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 100 - 103
Surface texture of single-crystal silicon oxidized under a thin V2O5 layer S. E. NikitinV. N. VerbitskiyE. E. Terukova Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 104 - 109
Nanoscale Cu2O films: Radio-frequency magnetron sputtering and structural and optical studies D. A. KudryashovA. S. GudovskikhN. G. Filosofov Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 110 - 114
On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire V. V. VoronenkovM. V. VirkoY. G. Shreter Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 115 - 121
Epitaxial Al x Ga1 – x As:Mg alloys with different conductivity types P. V. SeredinA. S. LenshinMonika Rinke Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 122 - 130
PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor A. G. KhairnarV. S. PatilA. M. Mahajan Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 131 - 133
Application of B12N12 and B12P12 as two fullerene-like semiconductors for adsorption of halomethane: Density functional theory study Ali Shokuhi Rad Fabrication, Treatment, and Testing of Materials and Structures 10 February 2017 Pages: 134 - 138