1. Effect of light on the mobility of free carriers in indium-monoselenide crystals

   • A. Sh. Abdinov
   • R. F. Babayeva
   • R. M. Rzayev

   Electronic Properties of Semiconductors 06 August 2014 Pages: 981 - 985

2. Specific features of magnetoresistance in overcompensated manganese-doped silicon

   • M. K. Bakhadirkhanov
   • G. H. Mavlonov
   • C. A. Tachilin

   Electronic Properties of Semiconductors 06 August 2014 Pages: 986 - 988

3. Deformation paramagnetic defects in Fz-²⁹Si:P crystals

   • O. V. Koplak
   • A. I. Dmitriev
   • R. B. Morgunov

   Electronic Properties of Semiconductors 06 August 2014 Pages: 989 - 995

4. Study of a deep donor level in n-GaAs by electron transport data obtained under hydrostatic pressure

   • M. I. Daunov
   • U. Z. Zalibekov
   • A. Yu. Mollaev

   Electronic Properties of Semiconductors 06 August 2014 Pages: 996 - 998

5. Effect of interband scattering on transport phenomena in p-PbSb₂Te₄

   • S. A. Nemov
   • N. M. Blagikh
   • M. B. Dzhafarov

   Electronic Properties of Semiconductors 06 August 2014 Pages: 999 - 1005

6. Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

   • V. V. Kozlovski
   • A. A. Lebedev
   • N. V. Seredova

   Electronic Properties of Semiconductors 06 August 2014 Pages: 1006 - 1009

7. DFT modeling of Mn charged states in Ga_{1 − x} Mn _x As diluted ferromagnetic semiconductors: The cluster approach

   • I. V. Krauklis
   • O. Yu. Podkopaeva
   • Yu. V. Chizhov

   Electronic Properties of Semiconductors 06 August 2014 Pages: 1010 - 1016

8. On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon

   • V. V. Tsyplenkov
   • R. Kh. Zhukavin
   • V. N. Shastin

   Electronic Properties of Semiconductors 06 August 2014 Pages: 1017 - 1022

9. Properties of nanostructured Al doped ZnO thin films grown by spray pyrolysis technique

   • N. Sadananda Kumar
   • Kasturi V. Bangera
   • G. K. Shivakumar

   Spectroscopy, Interaction with Radiation 06 August 2014 Pages: 1023 - 1027

10. Characterization of porous silicon carbide according to absorption and photoluminescence spectra

    • N. I. Berezovska
    • Yu. Yu. Bacherikov
    • A. M. Svetlichnyi

    Spectroscopy, Interaction with Radiation 06 August 2014 Pages: 1028 - 1030

11. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots

    • M. M. Sobolev
    • I. M. Gadzhiyev
    • V. M. Ustinov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1031 - 1035

12. On the process of hole trapping in Ge/Si heterostructures with Ge quantum dots

    • A. A. Bloshkin
    • A. I. Yakimov
    • A. V. Dvurechenskii

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1036 - 1040

13. Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors

    • P. P. Fastykovsky
    • M. A. Glauberman

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1041 - 1045

14. Electrical properties of thin-film semiconductor heterojunctions n-TiO₂/p-CuInS₂

    • V. V. Brus
    • I. G. Orletsky
    • P. D. Maryanchuk

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2014 Pages: 1046 - 1050

15. Theoretical studies on dimerization reactions of 4, 7-diphenyl-1,10-phenanthroline (BPhen) and bathocuproine (BCP) in organic semiconductors

    • Fahimeh Shojaie

    Amorphous, Vitreous, and Organic Semiconductors 06 August 2014 Pages: 1051 - 1062

16. On the detection of U ⁻ centers in g-As₂Se₃ films by thermal cycling measurements of electrical conductivity

    • K. N. Egarmin
    • E. M. Eganova
    • E. N. Voronkov

    Amorphous, Vitreous, and Organic Semiconductors 06 August 2014 Pages: 1063 - 1066

17. On the picosecond switching of a high-density current (60 kA/cm²) via a Si closing switch based on a superfast ionization front

    • A. I. Gusev
    • S. K. Lyubutin
    • S. N. Tsyranov

    Physics of Semiconductor Devices 06 August 2014 Pages: 1067 - 1078

18. Efficiency droop in GaN LEDs at high current densities: Tunneling leakage currents and incomplete lateral carrier localization in InGaN/GaN quantum wells

    • N. I. Bochkareva
    • Y. T. Rebane
    • Y. G. Shreter

    Physics of Semiconductor Devices 06 August 2014 Pages: 1079 - 1087

19. On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example

    • N. N. Gerasimenko
    • K. B. Tynyshtykbaev
    • E. A. Gosteva

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1088 - 1093

20. Structural and optical properties of heavily doped Al _x Ga_{1 − x} As_{1 − y} P _y :Mg alloys produced by metal-organic chemical vapor deposition

    • P. V. Seredin
    • A. S. Lenshin
    • M. Rinke

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1094 - 1102

21. Study of postgrowth processing in the fabrication of quantum-cascade lasers

    • V. V. Mamutin
    • N. D. Ilyinskaya
    • B. V. Pushnyi

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1103 - 1108

22. Quantitative calibration and germanium SIMS depth profiling in Ge _x Si_{1 − x} /Si heterostructures

    • M. N. Drozdov
    • Yu. N. Drozdov
    • D. V. Yurasov

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1109 - 1117

23. Synthesis of compositionally different multicomponent metal-oxide films (SnO₂) _x (ZnO)_{1 − x} (x = 1–0.5)

    • S. I. Rembeza
    • N. N. Kosheleva
    • C. Açiksari

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2014 Pages: 1118 - 1122