On the possibility of spinodal decomposition in the transition layer of a heterostructure based on silicon-carbide polytypes S. Yu. DavydovA. A. Lebedev Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 12 June 2014 Pages: 701 - 704
Magnetic properties of (FeIn2S4)1 − x (CuIn5S8) x single-crystal alloys I. V. BodnarS. V. Trukhanov Electronic Properties of Semiconductors 12 June 2014 Pages: 705 - 710
Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition I. V. MirgorodskiyL. A. GolovanV. M. Puzikov Spectroscopy, Interaction with Radiation 12 June 2014 Pages: 711 - 714
Optical properties and electronic structure of mercury iodide V. V. SobolevV. Val. SobolevD. V. Anisimov Spectroscopy, Interaction with Radiation 12 June 2014 Pages: 715 - 721
Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field V. A. MakaraL. P. SteblenkoS. N. Naumenko Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 722 - 726
Specific features of the low-temperature conductivity and photoconductivity of CuInSe2-ZnIn2Se4 alloys V. V. BozhkoO. V. NovosadA. V. Chichurin Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 727 - 732
On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate V. V. RomanovM. V. BaidakovaK. D. Moiseev Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 733 - 738
Properties of TiO2 films on silicon substrate V. M. KalyginaV. A. NovikovT. M. Yaskevich Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 739 - 742
Effect of ion-beam treatment during reactive high-frequency magnetron sputtering on macrostresses in ITO films P. N. KrylovR. M. ZakirovaI. V. Fedotova Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 743 - 747
Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field B. M. AskerovS. R. FigarovaV. R. Figarov Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 748 - 753
Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra N. R. GrigorievaA. Yu. EgorovR. P. Seisyan Surfaces, Interfaces, and Thin Films 12 June 2014 Pages: 754 - 759
Influence of the stark effect on the resonance excitation transfer between quantum dots P. A. Golovinskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 760 - 766
CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range M. V. YakushevV. S. VaravinD. V. Marin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 767 - 771
Influence of the nonequilibrium-carrier concentration on the hall voltage in a p-type semiconductor A. Konin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 772 - 775
On the photopleochroism coefficient and its temperature dynamics in native oxide-p-InSe heterojunctions V. M. KaterynchukZ. R. KudrynskyiZ. D. Kovalyuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 776 - 778
Features of the spin-lattice relaxation of nuclear spins 63,65Cu in the CuAlO2 semiconductor compound V. L. MatukhinD. A. ShulginE. I. Terukov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 779 - 782
On the size distribution in three-dimensional quantum-dot crystals R. D. VengrenovichB. V. IvanskiiI. I. Panko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 783 - 791
Electrical properties of a SiC-Si multilayer structure V. B. Bozhevol’novA. M. YafyasovE. O. Filatova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 792 - 795
Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors R. I. AlekberovA. I. IsayevG. A. Isayeva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 12 June 2014 Pages: 796 - 799
Raman scattering in As-Se-S and As-Se-Te Chalcogenide vitreous semiconductors R. I. AlekberovS. I. MekhtiyevaA. I. Isayev Amorphous, Vitreous, and Organic Semiconductors 12 June 2014 Pages: 800 - 803
Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate I. V. AntonovaS. V. GolodV. Ya. Prinz Carbon Systems 12 June 2014 Pages: 804 - 808
Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors Jung-Hui TsaiChing-Sung LeeYi-Ting Chao Physics of Semiconductor Devices 12 June 2014 Pages: 809 - 814
Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes D. E. NikolichevA. V. BoryakovA. V. Kudrin Physics of Semiconductor Devices 12 June 2014 Pages: 815 - 820
On the diffusion growth mechanism of semiconductor nanowires with the participation of hot atoms M. V. GrankinA. I. BazhynD. V. Grankin Fabrication, Treatment, and Testing of Materials and Structures 12 June 2014 Pages: 821 - 827
Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions N. L. IvinaL. K. Orlov Fabrication, Treatment, and Testing of Materials and Structures 12 June 2014 Pages: 828 - 837