1. Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of A ^X B^{8 − X} materials on the energy of the inverse adsorption piezoelectric effect

   • O. A. Fedyaeva

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 05 September 2012 Pages: 1097 - 1101

2. Investigation of the promising thermoelectric compound CuAlO₂ by the method of nuclear quadrupole resonance in Cu

   • V. L. Matukhin
   • I. H. Khabibullin
   • E. I. Terukov

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 05 September 2012 Pages: 1102 - 1105

3. Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurity

   • V. A. Romaka
   • P. Rogl
   • A. M. Horyn

   Electronic Properties of Semiconductors 05 September 2012 Pages: 1106 - 1113

4. Conductivity of Se₉₅As₅ chalcogenide glassy semiconductor layers containing the EuF₃ rare-earth impurity in high electric fields

   • A. I. Isayev
   • S. I. Mekhtieva
   • V. Z. Zeynalov

   Electronic Properties of Semiconductors 05 September 2012 Pages: 1114 - 1118

5. Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured silicon

   • I. M. Antropov
   • A. S. Semisalova
   • S. N. Kozlov

   Electronic Properties of Semiconductors 05 September 2012 Pages: 1119 - 1121

6. On the band gap in (In₂S₃) _x (CuIn₅S₈)_{1 − x} alloy single crystals

   • I. V. Bodnar
   • V. V. Shatalova

   Electronic Properties of Semiconductors 05 September 2012 Pages: 1122 - 1125

7. Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor

   • Chun-Nan Chen
   • Sheng-Hsiung Chang
   • Yiming Li

   Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1126 - 1134

8. Terahertz emission upon the interband excitation of GaN layers

   • A. O. Zakhar’in
   • A. V. Bobylev
   • A. V. Andrianov

   Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1135 - 1139

9. Raman scattering in the Bi₂(Te_0.9Se_0.1)₃ solid solution films

   • N. A. Abdullaev
   • N. M. Abdullaev
   • S. A. Nemov

   Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1140 - 1144

10. Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materials

    • Z. D. Kovalyuk
    • O. N. Sydor
    • A. G. Khandozhko

    Spectroscopy, Interaction with Radiation 05 September 2012 Pages: 1145 - 1151

11. Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe

    • V. V. Brus
    • M. I. Ilashchuk
    • K. S. Ulyanytsky

    Surfaces, Interfaces, and Thin Films 05 September 2012 Pages: 1152 - 1157

12. Refined model for the current-voltage characteristics of quantum-well infrared photodetectors

    • V. B. Kulikov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2012 Pages: 1158 - 1162

13. Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gas

    • S. S. Krishtopenko
    • K. P. Kalinin
    • M. Goiran

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2012 Pages: 1163 - 1170

14. Nature of the electronic component of the thermal phase transition in VO₂ films

    • A. V. Ilinskiy
    • O. E. Kvashenkina
    • E. B. Shadrin

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 September 2012 Pages: 1171 - 1185

15. On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet graphene

    • S. Yu. Davydov

    Carbon Systems 05 September 2012 Pages: 1186 - 1189

16. Electrical and gas-sensitive properties of a SnO₂-based nanocomposite with multiwalled carbon nanotubes

    • S. I. Rembeza
    • Yu. V. Shmatova
    • N. N. Kosheleva

    Carbon Systems 05 September 2012 Pages: 1190 - 1193

17. n-Si bifacial concentrator solar cell

    • G. G. Untila
    • T. N. Kost
    • M. Z. Shvarts

    Physics of Semiconductor Devices 05 September 2012 Pages: 1194 - 1200

18. Overheating of an optically triggered SiC thyristor during switch-on and turn-on spread

    • M. E. Levinshtein
    • T. T. Mnatsakanov
    • J. W. Palmour

    Physics of Semiconductor Devices 05 September 2012 Pages: 1201 - 1206

19. Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)

    • I. S. Shashkin
    • D. A. Vinokurov
    • I. S. Tarasov

    Physics of Semiconductor Devices 05 September 2012 Pages: 1207 - 1210

20. Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)

    • I. S. Shashkin
    • D. A. Vinokurov
    • I. S. Tarasov

    Physics of Semiconductor Devices 05 September 2012 Pages: 1211 - 1215

21. Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistors

    • K. Yu. Osipov
    • L. E. Velikovskiy

    Fabrication, Treatment, and Testing of Materials and Structures 05 September 2012 Pages: 1216 - 1220

22. Transformation of a SiC/por-SiC/TiO₂ structure during rapid thermal annealing

    • R. V. Konakova
    • O. F. Kolomys
    • L. G. Linets

    Fabrication, Treatment, and Testing of Materials and Structures 05 September 2012 Pages: 1221 - 1224