1. Solubility of sulfur in silicon

   • V. B. Shuman
   • A. A. Makhova
   • A. N. Lodygin

   Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 August 2012 Pages: 969 - 970

2. Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

   • Z. D. Kovalyuk
   • V. B. Boledzyuk
   • A. D. Shevchenko

   Electronic Properties of Semiconductors 06 August 2012 Pages: 971 - 974

3. Electric-field-induced modification of the optical properties of CuI crystals

   • A. N. Gruzintsev
   • V. N. Zagorodnev

   Electronic Properties of Semiconductors 06 August 2012 Pages: 975 - 979

4. Nature of the diamagnetic maximum in the temperature dependences of the magnetic susceptibility of crystals of (Bi_{2 − x} Sb _x )Te₃ alloys (0 < x < 1)

   • N. P. Stepanov
   • V. Y. Nalivkin
   • A. K. Gil’fanov

   Electronic Properties of Semiconductors 06 August 2012 Pages: 980 - 987

5. Potential barrier and photovoltage at interfaces of hexadecafluoro-copper-phthalocyanine and copper phthalocyanine films on the surface of tin dioxide

   • A. S. Komolov
   • E. F. Lazneva
   • A. A. Gavrikov

   Surfaces, Interfaces, and Thin Films 06 August 2012 Pages: 988 - 992

6. Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures

   • B. V. Pavlyk
   • D. P. Slobodzyan
   • R. I. Didyk

   Surfaces, Interfaces, and Thin Films 06 August 2012 Pages: 993 - 997

7. Quantum-confined stark effect and localization of charge carriers in Al_0.3Ga_0.7N/Al_0.4Ga_0.6N quantum wells with different morphologies

   • E. A. Shevchenko
   • V. N. Jmerik
   • A. A. Toropov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 998 - 1002

8. Electrical characteristics of n-GaAs-anode film-Ga₂O₃-metal structures

   • V. M. Kalygina
   • K. I. Valiev
   • T. M. Yaskevich

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1003 - 1007

9. Effect of a transverse electric field on charge carrier mobility in nanowires

   • E. P. Sinyavskii
   • S. A. Karapetyan

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1008 - 1011

10. On the impedance spectroscopy of structures with a potential barrier

    • V. V. Brus

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1012 - 1015

11. Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells

    • V. V. Chaldyshev
    • E. V. Kundelev
    • A. A. Gorbatsevich

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1016 - 1019

12. Effect of a nonstationary electric field with different front profiles on carbon nanotubes

    • N. R. Sadykov
    • N. A. Skorkin

    Carbon Systems 06 August 2012 Pages: 1020 - 1026

13. Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers

    • A. E. Zhukov
    • L. V. Asryan
    • E. S. Semenova

    Physics of Semiconductor Devices 06 August 2012 Pages: 1027 - 1031

14. Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

    • N. I. Bochkareva
    • V. V. Voronenkov
    • Yu. G. Shreter

    Physics of Semiconductor Devices 06 August 2012 Pages: 1032 - 1039

15. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

    • N. V. Kryzhanovskaya
    • A. E. Zhukov
    • A. A. Lipovskii

    Physics of Semiconductor Devices 06 August 2012 Pages: 1040 - 1043

16. Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser

    • Z. N. Sokolova
    • I. S. Tarasov
    • L. V. Asryan

    Physics of Semiconductor Devices 06 August 2012 Pages: 1044 - 1050

17. Photoelectric determination of the series resistance of multijunction solar cells

    • M. A. Mintairov
    • V. V. Evstropov
    • V. M. Lantratov

    Physics of Semiconductor Devices 06 August 2012 Pages: 1051 - 1058

18. N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes

    • K. M. Aliev
    • I. K. Kamilov
    • N. S. Abakarova

    Physics of Semiconductor Devices 06 August 2012 Pages: 1059 - 1065

19. Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons

    • G. I. Koltsov
    • S. I. Didenko
    • Yu. N. Sveshnikov

    Physics of Semiconductor Devices 06 August 2012 Pages: 1066 - 1071

20. Lasing in spherically shaped Y₂O₃-ZnO nanocomposites

    • A. N. Gruzintsev
    • G. A. Emelchenko
    • A. V. Tolmachev

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1072 - 1078

21. Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p ⁺-layer

    • A. S. Lenshin
    • V. M. Kashkarov
    • E. P. Domashevskaya

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1079 - 1084

22. Effect of various treatments on Schottky diode properties

    • I. Q. Pashaev

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1085 - 1087

23. Growth of Ge_{1 − x} Sn _x solid solution films and study of their structural properties and some of their photoelectric properties

    • A. S. Saidov
    • Sh. N. Usmonov
    • U. P. Asatova

    Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1088 - 1095