Solubility of sulfur in silicon V. B. ShumanA. A. MakhovaA. N. Lodygin Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 06 August 2012 Pages: 969 - 970
Ferromagnetism of layered GaSe semiconductors intercalated with cobalt Z. D. KovalyukV. B. BoledzyukA. D. Shevchenko Electronic Properties of Semiconductors 06 August 2012 Pages: 971 - 974
Electric-field-induced modification of the optical properties of CuI crystals A. N. GruzintsevV. N. Zagorodnev Electronic Properties of Semiconductors 06 August 2012 Pages: 975 - 979
Nature of the diamagnetic maximum in the temperature dependences of the magnetic susceptibility of crystals of (Bi2 − x Sb x )Te3 alloys (0 < x < 1) N. P. StepanovV. Y. NalivkinA. K. Gil’fanov Electronic Properties of Semiconductors 06 August 2012 Pages: 980 - 987
Potential barrier and photovoltage at interfaces of hexadecafluoro-copper-phthalocyanine and copper phthalocyanine films on the surface of tin dioxide A. S. KomolovE. F. LaznevaA. A. Gavrikov Surfaces, Interfaces, and Thin Films 06 August 2012 Pages: 988 - 992
Quality of the p-Si crystal surface and radiation-stimulated changes in the characteristics of Bi-Si-Al surface-barrier structures B. V. PavlykD. P. SlobodzyanR. I. Didyk Surfaces, Interfaces, and Thin Films 06 August 2012 Pages: 993 - 997
Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies E. A. ShevchenkoV. N. JmerikA. A. Toropov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 998 - 1002
Electrical characteristics of n-GaAs-anode film-Ga2O3-metal structures V. M. KalyginaK. I. ValievT. M. Yaskevich Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1003 - 1007
Effect of a transverse electric field on charge carrier mobility in nanowires E. P. SinyavskiiS. A. Karapetyan Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1008 - 1011
On the impedance spectroscopy of structures with a potential barrier V. V. Brus Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1012 - 1015
Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells V. V. ChaldyshevE. V. KundelevA. A. Gorbatsevich Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 06 August 2012 Pages: 1016 - 1019
Effect of a nonstationary electric field with different front profiles on carbon nanotubes N. R. SadykovN. A. Skorkin Carbon Systems 06 August 2012 Pages: 1020 - 1026
Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers A. E. ZhukovL. V. AsryanE. S. Semenova Physics of Semiconductor Devices 06 August 2012 Pages: 1027 - 1031
Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density N. I. BochkarevaV. V. VoronenkovYu. G. Shreter Physics of Semiconductor Devices 06 August 2012 Pages: 1032 - 1039
High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots N. V. KryzhanovskayaA. E. ZhukovA. A. Lipovskii Physics of Semiconductor Devices 06 August 2012 Pages: 1040 - 1043
Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser Z. N. SokolovaI. S. TarasovL. V. Asryan Physics of Semiconductor Devices 06 August 2012 Pages: 1044 - 1050
Photoelectric determination of the series resistance of multijunction solar cells M. A. MintairovV. V. EvstropovV. M. Lantratov Physics of Semiconductor Devices 06 August 2012 Pages: 1051 - 1058
N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes K. M. AlievI. K. KamilovN. S. Abakarova Physics of Semiconductor Devices 06 August 2012 Pages: 1059 - 1065
Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons G. I. KoltsovS. I. DidenkoYu. N. Sveshnikov Physics of Semiconductor Devices 06 August 2012 Pages: 1066 - 1071
Lasing in spherically shaped Y2O3-ZnO nanocomposites A. N. GruzintsevG. A. EmelchenkoA. V. Tolmachev Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1072 - 1078
Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on n-type substrates with an epitaxially deposited p +-layer A. S. LenshinV. M. KashkarovE. P. Domashevskaya Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1079 - 1084
Effect of various treatments on Schottky diode properties I. Q. Pashaev Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1085 - 1087
Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties A. S. SaidovSh. N. UsmonovU. P. Asatova Fabrication, Treatment, and Testing of Materials and Structures 06 August 2012 Pages: 1088 - 1095