Determination of the degree of ordering of materials’ structure by calculating the information-correlation characteristics S. P. VikhrovT. G. AvachevaA. P. Avachev Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 18 April 2012 Pages: 415 - 421
Phase transition and correlation effects in vanadium dioxide A. V. IlinskiyO. E. KvashenkinaE. B. Shadrin Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) 18 April 2012 Pages: 422 - 429
Effect of γ-ray radiation on electrical properties of heat-treated Tb x Sn1 − x Se single crystals J. I. HuseynovT. A. Jafarov Electronic Properties of Semiconductors 18 April 2012 Pages: 430 - 432
Electronic properties and deep traps in electron-irradiated n-GaN V. N. BrudnyiS. S. VerevkinN. B. Smirnov Electronic Properties of Semiconductors 18 April 2012 Pages: 433 - 439
Comparison of electronic structure of as grown and solar grade silicon samples R. SaravananR. A. J. R. Sheeba Electronic Properties of Semiconductors 18 April 2012 Pages: 440 - 446
Effect of copper doping on kinetic coefficients and their anisotropy in PbSb2Te4 S. A. NemovN. M. BlagihL. E. Shelimova Electronic Properties of Semiconductors 18 April 2012 Pages: 447 - 451
Static and dynamic photoinduced magnetic effects in yttrium-iron garnet lightly doped with barium ions N. V. Vorob’evaR. Z. Khalilov Electronic Properties of Semiconductors 18 April 2012 Pages: 452 - 455
Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type V. V. EmtsevA. M. IvanovG. Wagner Electronic Properties of Semiconductors 18 April 2012 Pages: 456 - 465
Absorptivity of semiconductors used in the production of solar cell panels L. A. KosyachenkoE. V. GrushkoT. I. Mikityuk Spectroscopy, Interaction with Radiation 18 April 2012 Pages: 466 - 470
Charge transport at the interface of n-GaAs (100) with an aqueous HCl solution: Electrochemical impedance spectroscopy study M. V. LebedevT. MasudaK. Uosaki Surfaces, Interfaces, and Thin Films 18 April 2012 Pages: 471 - 477
Features of electron mobility in a thin silicon layer in an insulator-silicon-insulator structure A. V. LeonovA. D. MokrushinN. M. Omeljanovskaja Surfaces, Interfaces, and Thin Films 18 April 2012 Pages: 478 - 483
Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts D. S. PonomarevI. S. Vasil’evskiiN. A. Uzeeva Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 18 April 2012 Pages: 484 - 490
Structural control over conductivity and conduction type in thin films of polyphenylquinones V. M. SvetlichnyiE. L. AleksandrovaN. V. Matyushina Amorphous, Vitreous, and Organic Semiconductors 18 April 2012 Pages: 491 - 495
Carbazole-containing polyphenylquinolines as a basis for optoelectronic materials with white luminescence V. M. SvetlichnyiE. L. AleksandrovaN. V. Matyushina Amorphous, Vitreous, and Organic Semiconductors 18 April 2012 Pages: 496 - 503
Photoinduced etching of thin films of chalcogenide glassy semiconductors V. A. Dan’koI. Z. IndutnyiO. S. Lytvyn Amorphous, Vitreous, and Organic Semiconductors 18 April 2012 Pages: 504 - 508
Effect of avalanche-type barrier discharge on a silver halide photographic material in the case of blocked ionic conductivity A. P. Boychenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 18 April 2012 Pages: 509 - 513
Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers Jung-Hui TsaiSheng-Shiun YeWen-Shiung Lour Physics of Semiconductor Devices 18 April 2012 Pages: 514 - 518
Operation of a semiconductor opening switch at ultrahigh current densities S. K. LyubutinS. N. RukinS. N. Tsyranov Physics of Semiconductor Devices 18 April 2012 Pages: 519 - 527
Subnanosecond 4H-SiC diode current breakers P. A. IvanovI. V. Grekhov Physics of Semiconductor Devices 18 April 2012 Pages: 528 - 531
Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC p +-p-n + diodes: Effect of impurity breakdown in the p-type base P. A. IvanovA. S. PotapovT. P. Samsonova Physics of Semiconductor Devices 18 April 2012 Pages: 532 - 534
Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector A. V. SorochkinV. S. VaravinM. V. Yakushev Physics of Semiconductor Devices 18 April 2012 Pages: 535 - 540
Effect of microwave irradiation on the resistance of Au-TiB x -Ge-Au-n-n +-n ++-GaAs(InP) ohmic contacts A. E. BelyaevA. V. SachenkoV. N. Sheremet Fabrication, Treatment, and Testing of Materials and Structures 18 April 2012 Pages: 541 - 544
Effect of post oxidation annealing on electrical characteristics of Ni/SiO2/4H-SiC capacitor with varying oxide thickness Sanjeev K. GuptaA. AzamJ. Akhtar Fabrication, Treatment, and Testing of Materials and Structures 18 April 2012 Pages: 545 - 551
Formation of anodic layers on InAs (111)III. Study of the chemical composition N. A. ValishevaO. E. TereshchenkoV. I. Bukhtiyarov Fabrication, Treatment, and Testing of Materials and Structures 18 April 2012 Pages: 552 - 558