Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy D. O. FilatovI. A. ZimovetsA. V. Kornaukhov Electronic Properties of Semiconductors 17 September 2011 Pages: 1111 - 1116
Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K Yu. V. ShaldinS. Matyjasik Electronic Properties of Semiconductors 17 September 2011 Pages: 1117 - 1123
Defect structure of Cd x Hg1 − x Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment I. I. IzhninA. I. IzhninK. D. Mynbaev Electronic Properties of Semiconductors 17 September 2011 Pages: 1124 - 1128
Effect of iron impurities on the photoluminescence and photoconductivity of ZnSe crystals in the visible spectral region Yu. F. VaksmanYu. A. NitsukP. V. Shapkin Electronic Properties of Semiconductors 17 September 2011 Pages: 1129 - 1132
Effect of microwave irradiation on the photoluminescence of bound excitons in CdTe:Cl single crystals D. V. KorbutyakA. P. LotskoR. A. Red’ko Spectroscopy, Interaction with Radiation 17 September 2011 Pages: 1133 - 1139
Photoluminescence in silicon implanted with silicon ions at amorphizing doses N. A. SobolevA. E. KalyadinD. I. Tetel’baum Spectroscopy, Interaction with Radiation 17 September 2011 Pages: 1140 - 1144
Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons A. A. LebedevV. V. KozlovskiG. A. Oganesyan Spectroscopy, Interaction with Radiation 17 September 2011 Pages: 1145 - 1147
Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated n-GaAs surface E. V. ErofeevV. A. Kagadei Surfaces, Interfaces, and Thin Films 17 September 2011 Pages: 1148 - 1152
Protonic metallization of the monoclinic phase in VO2 films A. V. IlinskiyO. E. KvashenkinaE. B. Shadrin Surfaces, Interfaces, and Thin Films 17 September 2011 Pages: 1153 - 1157
Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties I. S. Vasil’evskiiG. B. GalievM. A. Pushkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 September 2011 Pages: 1158 - 1163
Optical properties of quantum-confined heterostructures based on GaP x N y As1 − x − y alloys A. Yu. EgorovN. V. KryzhanovskayaM. S. Sobolev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 September 2011 Pages: 1164 - 1168
Electron mobility and drift velocity in selectively doped InAlAs/InGaAs/InAlAs heterostructures I. S. Vasil’evskiiG. B. GalievV. Stankevič Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 September 2011 Pages: 1169 - 1172
Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots G. I. TselikovS. G. DorofeevV. Yu. Timoshenko Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 17 September 2011 Pages: 1173 - 1176
Spectra of optical parameters in bulk and film amorphous alloys of the Se95As5 system containing samarium (Sm) impurities N. Z. DjalilovG. M. Damirov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 September 2011 Pages: 1177 - 1182
XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on n- and p-type substrates A. S. LenshinV. M. KashkarovV. A. Moshnikov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 September 2011 Pages: 1183 - 1188
Distribution of CdSe nanoparticles synthesized in porous SiO x matrix Yu. Yu. BacherikovI. Z. IndutnyiV. V. Ponamarenko Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 September 2011 Pages: 1189 - 1193
Thermoelectric properties of bismuth telluride nanocomposites with fullerene V. A. KulbachinskiiV. G. KytinM. Yu. Popov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 17 September 2011 Pages: 1194 - 1198
Electron states in single-layer graphene containing short-range defects: The potential separable in the momentum representation S. A. KtitorovYu. I. KuzminN. E. Firsova Carbon Systems 17 September 2011 Pages: 1199 - 1204
An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT Jinrong PuJiuxun SunDa Zhang Physics of Semiconductor Devices 17 September 2011 Pages: 1205 - 1210
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT T. R. LenkaA. K. Panda Physics of Semiconductor Devices 17 September 2011 Pages: 1211 - 1218
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters F. Y. SoldatenkovS. V. SorokinaA. A. Usikova Physics of Semiconductor Devices 17 September 2011 Pages: 1219 - 1226
Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate D. A. VinokurovD. N. NikolaevI. S. Tarasov Physics of Semiconductor Devices 17 September 2011 Pages: 1227 - 1230
Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles Jung-Hui TsaiDer-Feng GuoWen-Shiung Lour Physics Of Semiconductor Devices 17 September 2011 Pages: 1231 - 1233
The distribution of an electric field in p-n junctions of silicon edgeless detectors V. K. EreminA. S. NaletkoN. N. Egorov Physics of Semiconductor Devices 17 September 2011 Pages: 1234 - 1241
Synthesis of the lead, arsenic, and bismuth chalcogenides with liquid encapsulation B. A. TallerchikS. B. BoikoS. V. Shtelmah Fabrication, Treatment, and Testing of Materials and Structures 17 September 2011 Pages: 1242 - 1245
