1. Optimum composition of a Bi₂Te_{3 − x} Se _x alloy for the n-type leg of a thermoelectric generator

   • L. V. Prokofieva
   • D. A. Pshenay-Severin
   • A. A. Shabaldin

   Atomic Structure and Nonelectronic Propertties of Semiconductors 13 August 2009 Pages: 973 - 976

2. Thermoelectric figure of merit of Ag₂Se with Ag and Se excess

   • F. F. Aliev
   • M. B. Jafarov
   • V. I. Eminova

   Atomic Structure and Nonelectronic Propertties of Semiconductors 13 August 2009 Pages: 977 - 979

3. Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing

   • I. B. Ermolovich
   • V. V. Milenin
   • S. M. Red’ko

   Electrical and Optical Properties of Semiconductors 13 August 2009 Pages: 980 - 984

4. Spin-lattice relaxation of ¹¹³Cd and ¹⁹F nuclear spins in the crystal lattice of CdF₂ semiconductor crystals with DX centers

   • S. A. Kazanskii
   • W. W. Warren Jr.
   • A. I. Ryskin

   Electrical and Optical Properties of Semiconductors 13 August 2009 Pages: 985 - 992

5. Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions

   • A. P. Belyaev
   • V. P. Rubets
   • Kh. A. Toshkhodzhaev

   Semiconductor Structures, Interfaces, and Surfaces 13 August 2009 Pages: 993 - 994

6. The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field

   • M. M. Gadjialiev
   • Z. Sh. Pirmagomedov

   Low-Dimensional Systems 13 August 2009 Pages: 995 - 996

7. Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots

   • A. B. Talochkin
   • I. B. Chistokhin
   • V. A. Markov

   Low-Dimensional Systems 13 August 2009 Pages: 997 - 1001

8. Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation

   • I. N. Gorbatyi

   Low-Dimensional Systems 13 August 2009 Pages: 1002 - 1007

9. Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields

   • L. I. Gurinovich
   • A. A. Lutich
   • H. V. Demir

   Low-Dimensional Systems 13 August 2009 Pages: 1008 - 1016

10. Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal

    • A. N. Gruzintsev
    • G. A. Emelchenko
    • V. M. Masalov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 13 August 2009 Pages: 1017 - 1022

11. Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness

    • L. A. Kosyachenko
    • A. I. Savchuk
    • E. V. Grushko

    Physics of Semiconductor Devices 13 August 2009 Pages: 1023 - 1027

12. Cooperative effects in the case of pulsed self-heating of a p-i-n diode

    • A. V. Gorbatyuk
    • F. B. Serkov

    Physics of Semiconductor Devices 13 August 2009 Pages: 1028 - 1035

13. Dielectric waveguide for middle and far infrared radiation

    • N. S. Averkiev
    • S. O. Slipchenko
    • I. S. Tarasov

    Physics of Semiconductor Devices 13 August 2009 Pages: 1036 - 1039

14. Non-volatile memory based on silicon nanoclusters

    • Yu. N. Novikov

    Physics of Semiconductor Devices 13 August 2009 Pages: 1040 - 1045

15. Flexible solar cells based on cadmium sulfide and telluride

    • G. S. Khrypunov
    • E. P. Chernykh
    • E. K. Belonogov

    Physics of Semiconductor Devices 13 August 2009 Pages: 1046 - 1051

16. Charge transport in 4H-SiC detector structures under conditions of a high electric field

    • A. M. Ivanov
    • M. G. Mynbaeva
    • A. A. Lebedev

    Physics of Semiconductor Devices 13 August 2009 Pages: 1052 - 1054

17. Fast pulsed gallium arsenide heterostructure diodes

    • V. G. Danil’chenko
    • V. I. Korol’kov
    • F. Yu. Soldatenkov

    Physics of Semiconductor Devices 13 August 2009 Pages: 1055 - 1057

18. Features of molecular beam epitaxy of the GaN (0001) and GaN (000\( \bar 1 \)) layers with the use of different methods of activation of nitrogen

    • A. M. Mizerov
    • V. N. Jmerik
    • S. V. Ivanov

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1058 - 1063

19. Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors

    • S. V. Stetsyura
    • I. V. Malyar
    • S. A. Klimova

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1064 - 1070

20. Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films

    • N. A. Torkhov
    • V. A. Novikov

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1071 - 1077

21. High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

    • V. V. Chaldyshev
    • M. A. Yagovkina
    • B. R. Semyagin

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1078 - 1085

22. Properties of GaN(SiC)-(Ti, Zr)B _x contacts subjected to rapid thermal annealing

    • A. E. Belyaev
    • N. S. Boltovets
    • V. N. Sheremet

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1086 - 1091

23. Possibility of obtaining the (GaSb)_{1 − x} (Si₂) _x films on silicon substrates by the method of liquid-phase epitaxy

    • Sh. N. Usmonov
    • A. S. Saidov
    • K. T. Kholikov

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1092 - 1097

24. The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

    • P. V. Seredin
    • N. N. Gordienko
    • M. V. Shishkov

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1098 - 1101

25. Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

    • K. D. Moiseev
    • Ya. A. Parkhomenko
    • Yu. P. Yakovlev

    Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1102 - 1109