Optimum composition of a Bi2Te3 − x Se x alloy for the n-type leg of a thermoelectric generator L. V. ProkofievaD. A. Pshenay-SeverinA. A. Shabaldin Atomic Structure and Nonelectronic Propertties of Semiconductors 13 August 2009 Pages: 973 - 976
Thermoelectric figure of merit of Ag2Se with Ag and Se excess F. F. AlievM. B. JafarovV. I. Eminova Atomic Structure and Nonelectronic Propertties of Semiconductors 13 August 2009 Pages: 977 - 979
Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing I. B. ErmolovichV. V. MileninS. M. Red’ko Electrical and Optical Properties of Semiconductors 13 August 2009 Pages: 980 - 984
Spin-lattice relaxation of 113Cd and 19F nuclear spins in the crystal lattice of CdF2 semiconductor crystals with DX centers S. A. KazanskiiW. W. Warren Jr.A. I. Ryskin Electrical and Optical Properties of Semiconductors 13 August 2009 Pages: 985 - 992
Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions A. P. BelyaevV. P. RubetsKh. A. Toshkhodzhaev Semiconductor Structures, Interfaces, and Surfaces 13 August 2009 Pages: 993 - 994
The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field M. M. GadjialievZ. Sh. Pirmagomedov Low-Dimensional Systems 13 August 2009 Pages: 995 - 996
Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots A. B. TalochkinI. B. ChistokhinV. A. Markov Low-Dimensional Systems 13 August 2009 Pages: 997 - 1001
Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation I. N. Gorbatyi Low-Dimensional Systems 13 August 2009 Pages: 1002 - 1007
Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields L. I. GurinovichA. A. LutichH. V. Demir Low-Dimensional Systems 13 August 2009 Pages: 1008 - 1016
Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal A. N. GruzintsevG. A. EmelchenkoV. M. Masalov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 13 August 2009 Pages: 1017 - 1022
Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness L. A. KosyachenkoA. I. SavchukE. V. Grushko Physics of Semiconductor Devices 13 August 2009 Pages: 1023 - 1027
Cooperative effects in the case of pulsed self-heating of a p-i-n diode A. V. GorbatyukF. B. Serkov Physics of Semiconductor Devices 13 August 2009 Pages: 1028 - 1035
Dielectric waveguide for middle and far infrared radiation N. S. AverkievS. O. SlipchenkoI. S. Tarasov Physics of Semiconductor Devices 13 August 2009 Pages: 1036 - 1039
Non-volatile memory based on silicon nanoclusters Yu. N. Novikov Physics of Semiconductor Devices 13 August 2009 Pages: 1040 - 1045
Flexible solar cells based on cadmium sulfide and telluride G. S. KhrypunovE. P. ChernykhE. K. Belonogov Physics of Semiconductor Devices 13 August 2009 Pages: 1046 - 1051
Charge transport in 4H-SiC detector structures under conditions of a high electric field A. M. IvanovM. G. MynbaevaA. A. Lebedev Physics of Semiconductor Devices 13 August 2009 Pages: 1052 - 1054
Fast pulsed gallium arsenide heterostructure diodes V. G. Danil’chenkoV. I. Korol’kovF. Yu. Soldatenkov Physics of Semiconductor Devices 13 August 2009 Pages: 1055 - 1057
Features of molecular beam epitaxy of the GaN (0001) and GaN (000\( \bar 1 \)) layers with the use of different methods of activation of nitrogen A. M. MizerovV. N. JmerikS. V. Ivanov Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1058 - 1063
Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors S. V. StetsyuraI. V. MalyarS. A. Klimova Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1064 - 1070
Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films N. A. TorkhovV. A. Novikov Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1071 - 1077
High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus V. V. ChaldyshevM. A. YagovkinaB. R. Semyagin Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1078 - 1085
Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing A. E. BelyaevN. S. BoltovetsV. N. Sheremet Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1086 - 1091
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy Sh. N. UsmonovA. S. SaidovK. T. Kholikov Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1092 - 1097
The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures P. V. SeredinN. N. GordienkoM. V. Shishkov Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1098 - 1101
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate K. D. MoiseevYa. A. ParkhomenkoYu. P. Yakovlev Fabrication, Treatment, and Testing of Materials and Structures 13 August 2009 Pages: 1102 - 1109