Spinodal decomposition of ZnO-BeO alloys O. S. EmeljanovaS. S. StrelchenkoM. P. Usacheva Atomic Structure and Nonelectronic Properties of Semiconductors 10 February 2009 Pages: 135 - 138
Nonuniformity of electrical properties for the PbTe single crystals in the growth direction N. B. MustafayevG. Z. BagiyevaD. Sh. Abdinov Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 139 - 141
Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides V. L. ShaposhnikovD. B. MigasN. N. Dorozhkin Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 142 - 144
Conductivity anisotropy in the doped Bi2Te3 single crystals N. A. AbdullaevS. Sh. KakhramanovS. A. Nemov Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 145 - 151
Magnetic and electrical properties of layered magnets Tl(Cr,Mn,Co)Se2 R. G. VeliyevR. Z. SadikhovA. I. Jabbarov Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 152 - 155
Conductivity of ultradispersed SnO2 ceramic in strong electric fields R. B. VasilievM. N. RumyantsevaA. M. Gaskov Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 156 - 157
Terbium photoluminescence in yttrium aluminum garnet xerogels G. K. MaliarevichN. V. GaponenkoE. A. Stepanova Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 158 - 161
Absorption, luminescence excitation, and infrared transmittance spectra of ZnS(O)-ZnSe(O) crystals in the context of the band anticrossing theory N. K. MorozovaD. A. MiderosN. D. Danilevich Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 162 - 167
The nature of “heavy” electrons in the p-HgTe zero-gap semiconductor M. I. DaunovI. K. KamilovS. F. Gabibov Electronic and Optical Properties of Semiconductors 10 February 2009 Pages: 168 - 174
Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures S. A. MuzafarovaS. A. MirsagatovF. N. Dzhamalov Semiconductor Structures, Interfaces, and Surfaces 10 February 2009 Pages: 175 - 180
Growth of n-Si layers by molecular-beam epitaxy on the substrates heavily doped with boron V. G. ShengurovV. Yu. ChalkovS. A. Denisov Semiconductor Structures, Interfaces, and Surfaces 10 February 2009 Pages: 181 - 184
Analysis of forward current-voltage characteristics of nonideal Ti/4H-SiC Schottky barriers P. A. IvanovA. S. PotapovT. P. Samsonova Semiconductor Structures, Interfaces, and Surfaces 10 February 2009 Pages: 185 - 188
Effect of ferroelectric substrate on the conductivity of the semiconductor film M. M. PanakhovA. A. AgasievS. N. Sarmasov Semiconductor Structures, Interfaces, and Surfaces 10 February 2009 Pages: 189 - 191
Properties of heterojunction based on pentacene and perylene derivatives P. Y. StakhiraV. V. CherpakD. Yu. Volynyuk Semiconductor Structures, Interfaces, and Surfaces 10 February 2009 Pages: 192 - 196
Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix A. N. GruzintsevG. A. EmelchenkoA. Maitre Low-Dimensional Systems 10 February 2009 Pages: 197 - 201
Magnetoabsorption of the electromagnetic radiation by a two-dimensional electron gas with Rashba’s spin-orbit coupling in a heterojunction with a lateral superlattice A. A. PerovL. V. Solnyshkova Low-Dimensional Systems 10 February 2009 Pages: 202 - 207
Difference-frequency generation in a butt-join diode laser B. N. ZvonkovA. A. BiryukovS. V. Morozov Low-Dimensional Systems 10 February 2009 Pages: 208 - 211
Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures S. V. ZaitsevD. R. YakovlevA. Waag Low-Dimensional Systems 10 February 2009 Pages: 212 - 217
Consideration for the dynamic depolarization in the effective-medium model for description of optical properties for anisotropic nanostructured semiconductors L. A. GolovanS. V. ZabotnovP. K. Kashkarov Low-Dimensional Systems 10 February 2009 Pages: 218 - 222
Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector A. V. AntonovV. I. GavrilenkoS. Komiyama Low-Dimensional Systems 10 February 2009 Pages: 223 - 227
Transport in GaAs/Al x Ga1−x As superlattices with narrow minibands: Effects of interminiband tunneling A. A. AndronovE. P. DodinYu. N. Nozdrin Low-Dimensional Systems 10 February 2009 Pages: 228 - 235
Transport in GaAs/Al x Ga1−x As superlattices with narrow forbidden minibands: Low-frequency negative differential conductivity and current oscillations A. A. AndronovE. P. DodinYu. N. Nozdrin Low-Dimensional Systems 10 February 2009 Pages: 236 - 244
The least number of pairs of layers needed for observation of satellite-structured X-ray diffraction in superlattices. Measurements and calculations of elastic stresses in alternate layers of superlattices G. F. Kuznetsov Low-Dimensional Systems 10 February 2009 Pages: 245 - 252
Effect of oxidation on the conductivity of nanocrystalline PbTe:In films in an alternating electric field A. A. DobrovolskyT. A. KomissarovaD. R. Khokhlov Low-Dimensional Systems 10 February 2009 Pages: 253 - 256
Nonlinear response of a double-well nanostructure with electron-electron interaction V. F. ElesinI. Yu. KateevM. A. Remnev Low-Dimensional Systems 10 February 2009 Pages: 257 - 261
Simulation of solar cells with quantum wells and comparison with conventional solar cells A. V. SachenkoI. O. Sokolovsky Physics of Semiconductor Devices 10 February 2009 Pages: 262 - 265
As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus A. V. BoitsovN. A. BertB. R. Semyagin Fabrication, Treatment, and Testing of Materials and Structures 10 February 2009 Pages: 266 - 268
