Sources of spontaneous emission based on indium arsenide N. V. ZotovaN. D. Il’inskayaN. M. Stus’ Review 13 June 2008 Pages: 625 - 641
Wave functions of hot excitons in semiconductors with degenerate bands A. V. Efanov Electronic and Optical Properties of Semiconductors 13 June 2008 Pages: 642 - 647
Dependence of the electrical parameters of MBE-grown Cd x Hg1 − x Te films on the level of doping with indium V. S. VaravinS. A. DvoretskiĭM. V. Yakushev Electronic and Optical Properties of Semiconductors 13 June 2008 Pages: 648 - 650
Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy G. Yu. SidorovN. N. MikhaĭlovS. A. Dvoretskiĭ Electronic and Optical Properties of Semiconductors 13 June 2008 Pages: 651 - 654
Electronic characteristics of the singly ionized pair of phosphorus donors in silicon and operations with charge qubits A. N. Voron’ko Electronic and Optical Properties of Semiconductors 13 June 2008 Pages: 655 - 661
Features of long-term relaxation of capacitance in rectifying structures based on n-ZnP2 I. G. StamovD. V. Tkachenko Semiconductor Structures, Interfaces, and Surfaces 13 June 2008 Pages: 662 - 668
X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport T. B. PopovaL. A. BakaleĭnikovE. Yu. Flegontova Semiconductor Structures, Interfaces, and Surfaces 13 June 2008 Pages: 669 - 674
Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off N. T. GurinO. Yu. Sabitov Semiconductor Structures, Interfaces, and Surfaces 13 June 2008 Pages: 675 - 688
Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride A. E. BelyaevN. S. BoltovetsV. N. Sheremet Semiconductor Structures, Interfaces, and Surfaces 13 June 2008 Pages: 689 - 693
Hybrid-phonon resonances in a quantum channel V. V. KarpuninV. A. Margulis Low-Dimensional Systems 13 June 2008 Pages: 694 - 701
Changes in optical properties of CdS nanoclusters in langmuir-blodgett films on passivation in ammonia E. A. BagaevK. S. ZhuravlevD. V. Shcheglov Low-Dimensional Systems 13 June 2008 Pages: 702 - 709
Lateral ordering of GaAs nanowhiskers on GaAs(111)As and GaAs (110) surfaces during molecular-beam epitaxy G. E. CirlinN. V. SibirevJ. -C. Harmand Low-Dimensional Systems 13 June 2008 Pages: 710 - 713
Generation of superradiation in quantum dot nanoheterostructures A. V. SavelyevL. Ya. KarachinskyG. G. Zegrya Low-Dimensional Systems 13 June 2008 Pages: 714 - 719
Energy characteristics of excitons in structures based on InGaN alloys S. O. UsovA. F. Tsatsul’nikovN. N. Ledentsov Low-Dimensional Systems 13 June 2008 Pages: 720 - 725
Light-enhanced sensitivity of SnO2 − x gas sensors A. M. GulyaevLe Van VanO. B. Mukhina Physics of Semiconductor Devices 13 June 2008 Pages: 726 - 730
SiO x layer formation during plasma sputtering of Si and SiO2 targets A. N. KarpovD. V. MarinY. Goldstein Physics of Semiconductor Devices 13 June 2008 Pages: 731 - 736
Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions L. E. Vorob’evV. L. ZerovaG. Belenky Physics of Semiconductor Devices 13 June 2008 Pages: 737 - 745
Electrochemical etching of macropores in silicon with grooved etch seeds E. V. AstrovaA. A. Nechitaĭlov Fabrication, Treatment, and Testing of Materials and Structures 13 June 2008 Pages: 746 - 751