1. Study of self-organization in disordered materials using information theory

   • T. G. Avacheva
   • N. V. Bodyagin
   • S. M. Mursalov

   Atomic Structure and Nonelectronic Properties of Semiconductors 09 May 2008 Pages: 499 - 504

2. Comparative analysis of the mechanisms of interface formation in a film structure under equilibrium and strongly nonequilibrium condition

   • A. P. Belyaev
   • V. P. Rubets
   • Kh. A. Toshkhodzhaev

   Atomic Structure and Nonelectronic Properties of Semiconductors 09 May 2008 Pages: 505 - 507

3. Optical and photoelectrical properties of AgCd₂GaS₄ single-crystal compounds

   • L. V. Bulatetskaya
   • V. V. Bozhko
   • O. V. Parasyuk

   Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 508 - 513

4. Extrinsic conductivity of Hg₃In₂Te₆ single crystals

   • L. A. Kosyachenko
   • I. I. German
   • E. S. Nikonyuk

   Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 514 - 517

5. Electroluminescence and phototrigger effect in single crystals of GaS _x Se_1−x alloys

   • A. G. Kyazym-Zade
   • V. M. Salmanov
   • A. A. Agaeva

   Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 518 - 521

6. Y and Z luminescence of polycrystalline cadmium telluride grown by a nonequilibrium reaction of the direct synthesis of components

   • V. V. Ushakov
   • Yu. V. Klevkov

   Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 522 - 527

7. Specific features of intrinsic photoconductivity spectra of copper-compensated indium phosphide

   • Ph. V. Makarenko
   • N. N. Pribylov
   • V. A. Mel’nik

   Electronic and Optical Properties of Semiconductors 09 May 2008 Pages: 528 - 530

8. Study of the properties of the surface of gallium arsenide by scanning atomic force microscopy

   • V. G. Bozhkov
   • N. A. Torkhov
   • V. A. Novikov

   Semiconductor Structures, Interfaces, and Surfaces 09 May 2008 Pages: 531 - 539

9. Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures

   • S. V. Zaitsev
   • A. A. Maksimov
   • A. Waag

   Semiconductor Structures, Interfaces, and Surfaces 09 May 2008 Pages: 540 - 544

10. Infrared transmittance spectra of photoluminescent oxide films with Si and Ge quantum dots formed by pulsed laser ablation

    • I. P. Lisovskyy
    • S. A. Zlobin
    • E. V. Begun

    Low-Dimensional Systems 09 May 2008 Pages: 545 - 549

11. Theoretical study of auger recombination processes in deep quantum wells

    • L. V. Danilov
    • G. G. Zegrya

    Low-Dimensional Systems 09 May 2008 Pages: 550 - 556

12. Threshold characteristics of an IR laser based on deep InAsSb/AlSb quantum well

    • L. V. Danilov
    • G. G. Zegrya

    Low-Dimensional Systems 09 May 2008 Pages: 557 - 562

13. Critical thickness for the Stranski-Krastanov transition treated with the effect of segregation

    • D. V. Yurasov
    • Yu. N. Drozdov

    Low-Dimensional Systems 09 May 2008 Pages: 563 - 570

14. High-frequency properties of double-well nanostructures

    • V. F. Elesin
    • I. Yu. Kateev

    Low-Dimensional Systems 09 May 2008 Pages: 571 - 575

15. Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons

    • I. P. Lisovskyy
    • I. Z. Indutniĭ
    • P. E. Shepelyavyĭ

    Low-Dimensional Systems 09 May 2008 Pages: 576 - 579

16. Hysteresis of tunnel current in w-GaN/AlGaN(0001) double-barrier structures

    • A. N. Razzhuvalov
    • S. N. Grinyaev

    Low-Dimensional Systems 09 May 2008 Pages: 580 - 588

17. Nature of damped current oscillations in the formation of a static acoustoelectric domain in a n-InGaAs/GaAs quantum-well heterostructure

    • P. A. Belevskiĭ
    • M. N. Vinoslavskiĭ
    • I. V. Stroganova

    Low-Dimensional Systems 09 May 2008 Pages: 589 - 592

18. Electron diffraction studies of short-range order parameters in amorphous Yb_1−x Sm _x As₂S₄ films

    • É. Sh. Hajiyev
    • A. I. Madadzade

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2008 Pages: 593 - 595

19. Thermal instability of silicon fullerenes stabilized with hydrogen: Computer simulation

    • A. E. Galashev

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2008 Pages: 596 - 603

20. Intrinsic luminescence of Tb in metal-polymer complexes of polyamide acids

    • É. A. Lebedev
    • M. Ya. Goikhman
    • A. V. Yakimanskiĭ

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 09 May 2008 Pages: 604 - 607

21. A cascade laser on shallow-donor transitions in δ-Doped GaAs/AlGaAs superlattices

    • N. A. Bekin
    • V. N. Shastin

    Physics of Semiconductor Devices 09 May 2008 Pages: 608 - 615

22. Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy

    • V. N. Jmerik
    • A. M. Mizerov
    • S. V. Ivanov

    Fabrication, Treatment, and Testing of Materials and Structures 09 May 2008 Pages: 616 - 623