On the modes of evaporation of Si and dopants in vacuum epitaxy procedures V. P. KuznetsovN. A. AlyabinaM. V. Kuznetsov Atomic Structure and Nonelectronic Properties of Semiconductors 05 February 2011 Pages: 251 - 256
Simulation of near-surface proton-stimulated diffusion of boron in silicon O. V. AleksandrovV. V. Kozlovski Atomic Structure and Nonelectronic Properties of Semiconductors 05 February 2011 Pages: 257 - 262
Electrical properties of FeIn2Se4 layered single crystals for alternating current N. N. NiftievO. B. TagievM. B. Muradov Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 263 - 265
Features of manifestation of acceptor state of gold in silicon with quenched-in donors A. D. KiryukhinV. V. Grigor’evV. V. Zuev Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 266 - 271
Effect of iodine impurity on relaxation of photoexcited silver chloride Yu. V. VostrikovaV. G. Klyuev Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 272 - 276
Effect of ultrasonic treatment on photoelectric and luminescent properties of ZnSe crystals E. M. ZobovM. E. ZobovE. K. Naimi Electronic and Optical Properties of Semiconductors 05 February 2011 Pages: 277 - 280
Effect of melting on the acoustic response of CdTe and GaAs subjected to the pulsed laser irradiation A. BaidullaevaV. P. VeleshchukP. E. Mozol’ Semiconductor Structures, Interfaces, and Surfaces 05 February 2011 Pages: 281 - 285
Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island Yu. N. DrozdovZ. F. KrasilnikA. N. Yablonskiy Low-Dimensional Systems 05 February 2011 Pages: 286 - 290
The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots A. S. ShkolnikA. V. SavelyevV. P. Evtikhiev Low-Dimensional Systems 05 February 2011 Pages: 291 - 297
Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer M. N. DrozdovN. V. VostokovV. I. Shashkin Low-Dimensional Systems 05 February 2011 Pages: 298 - 304
Wannier-stark effect in Ge/Si quantum dot superlattices M. M. SobolevG. É. CirlinN. D. Zakharov Low-Dimensional Systems 05 February 2011 Pages: 305 - 309
Optical orientation of holes in strained nanostructures N. S. AverkievN. I. Sablina Low-Dimensional Systems 05 February 2011 Pages: 310 - 315
Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al0.35Ga0.65As:Be quantum wells N. S. AverkievYu. L. IvanovV. E. Sedov Low-Dimensional Systems 05 February 2011 Pages: 316 - 320
Photoluminescence in semiconductor structures based on butyl-substituted erbium phthalocyanine complexes I. A. BelogorokhovYu. V. RyabchikovD. R. Khokhlov Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 321 - 324
Platinum nanoclusters encapsulated in amorphous carbon T. K. ZvonarevaA. A. SitnikovaV. I. Ivanov-Omskiĭ Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 05 February 2011 Pages: 325 - 328
Silicon light-emitting diodes with strong near-band-edge luminescence A. M. Emel’yanovN. A. Sobolev Physics of Semiconductor Devices 05 February 2011 Pages: 329 - 333
Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode V. I. GamanV. I. BalyubaV. M. Kalygina Physics of Semiconductor Devices 05 February 2011 Pages: 334 - 338
Mechanisms of rectification of a high-frequency signal by a field-effect heterotransistor with a short channel M. L. Orlov Physics of Semiconductor Devices 05 February 2011 Pages: 339 - 345
Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor J. H. TsaiW. Ch. LiuW. Sh. Lour Physics of Semiconductor Devices 05 February 2011 Pages: 346 - 349
High-power laser diodes of wavelength 808 nm based on various types of asymmetric heterostructures with an ultrawide waveguide V. V. BezotosnyĭV. V. Vasil’evaI. S. Tarasov Physics of Semiconductor Devices 05 February 2011 Pages: 350 - 353
Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser A. A. BiryukovB. N. ZvonkovVl. V. Kocharovskiĭ Physics of Semiconductor Devices 05 February 2011 Pages: 354 - 357
Luminescence properties of light-emitting diodes based on GaAs with the up-conversion Y2O2S:Er,Yb luminophor A. N. GruzintsevC. BarthouP. Benalloul Physics of Semiconductor Devices 05 February 2011 Pages: 358 - 362
Effect of electron and proton irradiation on characteristics of SiC surface-barrier detectors of nuclear radiation A. M. IvanovN. B. StrokanA. A. Lebedev Physics of Semiconductor Devices 05 February 2011 Pages: 363 - 369
Effect of the state of vacancy equilibrium on diffusion of chromium impurity in gallium arsenide S. S. Khludkov Fabrication, Treatment, and Testing of Materials and Structures 05 February 2011 Pages: 370 - 374