1. The effect of irradiation on the properties of SiC and devices based on this compound

   • E. V. Kalinina

   Review Pages: 745 - 783

2. The origin of edge luminescence in diffusion ZnSe:Sn layers

   • V. I. Gryvul
   • V. P. Makhniy
   • M. M. Slyotov

   Electronic and Optical Properties of Semiconductors Pages: 784 - 785

3. Optical properties of doped bismuth telluride crystals in the region of plasma effects

   • N. P. Stepanov
   • S. A. Nemov
   • T. E. Svechnikova

   Electronic and Optical Properties of Semiconductors Pages: 786 - 789

4. Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor

   • A. I. Veĭnger
   • A. G. Zabrodskiĭ
   • S. I. Goloshchapov

   Electronic and Optical Properties of Semiconductors Pages: 790 - 798

5. Features of erbium electroluminescence observed in disordered semiconductors and related to the difference in the localized state charge

   • A. B. Shmel’kin
   • K. D. Tsendin

   Electronic and Optical Properties of Semiconductors Pages: 799 - 803

6. Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal

   • V. V. Bogoboyashchyy
   • I. I. Izhnin
   • V. I. Ivanov-Omskiĭ

   Electronic and Optical Properties of Semiconductors Pages: 804 - 809

7. Atomic and electron structure of the GaAs (001) surface

   • S. E. Kul’kova
   • S. V. Eremeev
   • B. V. Potapkin

   Semiconductor Structures, Interfaces, and Surfaces Pages: 810 - 817

8. Lateral conductivity of p-type doped Si/Ge island structures

   • V. A. Gergel’
   • T. M. Burbaev
   • M. N. Yakupov

   Low-Dimensional Systems Pages: 818 - 821

9. The role of surface phonons in the formation of the spectrum of polaron states in quantum dots

   • A. Yu. Maslov
   • O. V. Proshina
   • A. N. Rusina

   Low-Dimensional Systems Pages: 822 - 827

10. Molecular state of A ⁺ centers in GaAs/AlGaAs quantum well

    • P. V. Petrov
    • Yu. L. Ivanov
    • A. E. Zhukov

    Low-Dimensional Systems Pages: 828 - 831

11. Electrochemical pore formation mechanism in III–V crystals (Part I)

    • V. P. Ulin
    • S. G. Konnikov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 832 - 844

12. Electrochemical pore formation mechanism in III–V crystals (Part II)

    • V. P. Ulin
    • S. G. Konnikov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 845 - 854

13. High-efficiency LEDs based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb type-II thyristor heterostructures

    • N. D. Stoyanov
    • B. E. Zhurtanov
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 855 - 859

14. 1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures

    • A. V. Lyutetskiĭ
    • K. S. Borshchev
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 860 - 864

15. Effect of deposition conditions on nanowhisker morphology

    • V. G. Dubrovskiĭ
    • I. P. Soshnikov
    • J. C. Harmand

    Physics of Semiconductor Devices Pages: 865 - 874

16. Silicon photodiode with a grid p-n junction

    • V. I. Blynskii
    • Y. G. Vasileuskii
    • A. L. Chizh

    Erratum Pages: 875 - 875