Simulation of aluminum diffusion in silicon in inert and oxidizing media O. V. AleksandrovA. A. KrivoruchkoN. A. Sobolev Atomic Structure and Nonelectronic Properties of Semiconductors 09 April 2006 Pages: 379 - 384
The correlation between the surface-energy minima and the shape of self-induced SiGe nanoislands A. M. YaremkoM. Ya. ValakhV. A. Yukhymchuk Atomic Structure and Nonelectronic Properties of Semiconductors 09 April 2006 Pages: 385 - 390
Specific features of the spectra of nonlinear optical absorption in nonstoichiometric and Ni doped GaSe single crystals A. BaĭdullaevaZ. K. VlasenkoP. E. Mozol’ Electronic and Optical Properties of Semiconductors 09 April 2006 Pages: 391 - 393
The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors N. A. PoklonskiS. A. VyrkoA. G. Zabrodskiĭ Electronic and Optical Properties of Semiconductors 09 April 2006 Pages: 394 - 400
Photoconductivity and luminescence of CuInSe2 single crystals at a high level of optical excitation A. G. GuseĭnovV. M. SalmanovR. M. Mamedov Electronic and Optical Properties of Semiconductors 09 April 2006 Pages: 401 - 402
The temporal and spatial instability of photoelectric response of the CdZnTe crystals V. P. MygalA. S. Phomin Electronic and Optical Properties of Semiconductors 09 April 2006 Pages: 403 - 405
Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−x As/GaAs(100) heterostructures with the ordered AlGaAs2 phase É. P. DomashevskayaP. V. SeredinI. S. Tarasov Semiconductor Structures, Interfaces, and Surfaces 09 April 2006 Pages: 406 - 413
Effect of copper ion implantation on the optical properties and low-temperature conductivity of carbon films I. A. FaĭzrakhmanovV. V. BazarovI. B. Khaĭbullin Semiconductor Structures, Interfaces, and Surfaces 09 April 2006 Pages: 414 - 419
Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions I. E. TyschenkoK. S. ZhuravlevV. P. Popov Semiconductor Structures, Interfaces, and Surfaces 09 April 2006 Pages: 420 - 426
Energy spectrum and magnetooptical properties of a D (−) center in a quantum constriction V. D. KrevchikA. A. MarkoA. B. Grunin Low-dimensional Systems 09 April 2006 Pages: 427 - 432
Spin splitting and electron g-factor of an excited quantum confinement subband V. I. Kadushkin Low-dimensional Systems 09 April 2006 Pages: 433 - 439
Quasi-hydrodynamic simulation of the conductivity of heavily doped nanosize layered heterostructures in high electric fields V. A. Gergel’V. A. KurbatovM. N. Yakupov Low-dimensional Systems 09 April 2006 Pages: 440 - 442
Photoluminescence of nanocrystalline silicon films formed by pulsed laser-assisted deposition with the introduction of carbon É. B. KaganovichI. P. LisovskiĭS. A. Zlobjn Low-dimensional Systems 09 April 2006 Pages: 443 - 448
Optimization of the temperature mode of metal-organic chemical vapor deposition of the InAs(N) quantum dots on GaAs (001) with intense photoluminescence at 1.3 μm V. I. ShashkinV. M. Danil’tsevYong-Jo Park Low-dimensional Systems 09 April 2006 Pages: 449 - 453
Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy B. A. BorisovS. N. NikishinH. Temkin Low-dimensional Systems 09 April 2006 Pages: 454 - 458
Influence of interface growth steps on the anisotropy of excitonic emission in ZnCdSe/ZnSe quantum wells V. Kh. KaĭbyshevV. V. Travnikov Low-dimensional Systems 09 April 2006 Pages: 459 - 467
Lithium intercalation into amorphous silicon thin films T. L. KulovaA. M. SkundinI. N. Trapeznikova Amorphous, Vitreous, and Porous Semiconductors 09 April 2006 Pages: 468 - 470
Alternating current conductivity of anisotropically nanostructured silicon P. A. ForshM. N. MartyshovP. K. Kashkarov Amorphous, Vitreous, and Porous Semiconductors 09 April 2006 Pages: 471 - 475
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation S. A. BlokhinN. V. KryzhanovskayaD. Bimberg Physics of Semiconductor Devices 09 April 2006 Pages: 476 - 480
Effect of intraband carrier relaxation on the threshold characteristics of quantum well lasers I. A. KostkoN. A. Gun’koG. G. Zegrya Physics of Semiconductor Devices 09 April 2006 Pages: 481 - 485
Parametric optimization of the Bragg reflectors in a laser with the vertical cavity and nonlinear frequency conversion Yu. A. MorozovI. S. NefedovM. Yu. Morozov Physics of Semiconductor Devices 09 April 2006 Pages: 486 - 490
A MOS tunnel emitter transistor as a tool for determining the effective hole mass in a thin film of SiO2 M. I. VexlerS. É. TyaginovA. F. Shulekin Physics of Semiconductor Devices 09 April 2006 Pages: 491 - 496