Formation of nanostructures in a Ga2Se3/GaAs system N. N. BezryadinG. I. KotovA. A. Starodubtsev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 989 - 992
Microphotoluminescence of undoped single-crystal zinc telluride produced by nonequilibrium vapor-phase growth techniques V. V. UshakovYu. V. Klevkov Electronic and Optical Properties of Semiconductors Pages: 993 - 997
Exact self-compensation of conduction in Cd0.95Zn0.05Te:Cl crystals in a wide range of Cd vapor pressures O. A. MatveevA. I. Terent’evV. P. Karpenko Electronic and Optical Properties of Semiconductors Pages: 998 - 1003
Optical properties of ZnGeP2 in the UV spectral region Yu. M. BasalaevA. B. GordienkoA. S. Poplavnoi Electronic and Optical Properties of Semiconductors Pages: 1004 - 1006
Instability of drift waves in two-component solid-state plasma A. A. BulgakovO. V. Shramkova Electronic and Optical Properties of Semiconductors Pages: 1007 - 1012
Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters P. N. BrunkovA. A. GutkinB. R. Semyagin Electronic and Optical Properties of Semiconductors Pages: 1013 - 1016
Study of the properties of Hg1−x−y−z CdxMnyZnzTe as a new infrared optoelectronic material I. N. GorbatyukS. E. OstapovS. Yu. Karelin Electronic and Optical Properties of Semiconductors Pages: 1017 - 1022
Transport coefficients of n-Bi2Te2.7Se0.3 in a two-band model of the electron spectrum P. P. KonstantinovL. V. Prokof’evaV. A. Chistyakov Electronic and Optical Properties of Semiconductors Pages: 1023 - 1027
The formation of nanodimensional structures on the surface of p-CdTe crystals exposed to a single radiation pulse from a ruby laser A. BaidullaevaA. I. VlasenkoP. E. Mozol’ Semiconductor Structures, Interfaces, and Surfaces Pages: 1028 - 1031
Effect of a submonolayer metal film on band bending in a semiconductor substrate S. Yu. DavydovA. V. Pavlyk Semiconductor Structures, Interfaces, and Surfaces Pages: 1032 - 1034
Photoelectric properties of surface-barrier structures based on Zn2−2x CuxInxSe2 films obtained by selenization V. Yu. Rud’Yu. V. Rud’O. N. Sergeeva Semiconductor Structures, Interfaces, and Surfaces Pages: 1035 - 1039
Simulation of special features of the drift-mobility saturation in submicrometer silicon structures V. A. Gergel’Yu. V. GulyaevM. N. Yakupov Semiconductor Structures, Interfaces, and Surfaces Pages: 1040 - 1044
Influence of an increase in the implantation dose of erbium ions and annealing temperature on photoluminescence in AlGaN/GaN superlattices and GaN epitaxial layers A. M. Emel’yanovN. A. SobolevE. O. Parshin Low-Dimensional Systems Pages: 1045 - 1047
A spin filter with a quantum point contact in a dilute magnetic semiconductor S. A. IgnatenkoV. E. Borisenko Low-Dimensional Systems Pages: 1048 - 1052
The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates M. M. SobolevG. E. CirlinA. A. Tonkikh Low-Dimensional Systems Pages: 1053 - 1057
Electronic structure of titanium disulfide nanostructures: Monolayers, nanostripes, and nanotubes V. V. IvanovskayaG. SeifertA. L. Ivanovskii Low-Dimensional Systems Pages: 1058 - 1065
Exciton states in semiconductor spherical nanostructures S. I. Pokutnyi Low-Dimensional Systems Pages: 1066 - 1070
High-frequency nonlinear response of double-well nanostructures V. F. ElesinI. Yu. Kateev Low-Dimensional Systems Pages: 1071 - 1075
Polarization of the optical emission of polaron excitons in anisotropic quantum dots A. Yu. MaslovO. V. Proshina Low-Dimensional Systems Pages: 1076 - 1081
A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure D. V. MorozovK. V. SmirnovG. N. Goltsman Physics of Semiconductor Devices Pages: 1082 - 1086
Semiconductor WGM lasers for the mid-IR spectral range V. V. SherstnevA. M. MonakhovG. Hill Physics of Semiconductor Devices Pages: 1087 - 1092
Semiconductor-insulator structures in the phototargets of vidicons sensitive in the middle infrared region of the spectrum N. F. KovtonyukV. P. MisnikA. V. Sokolov Physics of Semiconductor Devices Pages: 1093 - 1095
A mechanism of electroluminescence in silicon diodes with a high dislocation density A. V. SachenkoYu. V. Kryuchenko Physics of Semiconductor Devices Pages: 1096 - 1101
A combined model of a resonant-tunneling diode I. I. AbramovI. A. GoncharenkoN. V. Kolomeitseva Physics of Semiconductor Devices Pages: 1102 - 1109