1. Electroluminescence of graded-gap structures with blocking and ohmic contacts

   • B. S. Sokolovskii
   • V. I. Ivanov-Omskii
   • G. A. Il’chuk

   Electronic and Optical Properties of Semiconductors Pages: 1361 - 1368

2. Mössbauer study of the Ge two-electron donor centers in PbSe

   • E. I. Terukov
   • E. S. Khuzhakulov

   Electronic and Optical Properties of Semiconductors Pages: 1369 - 1370

3. Electron exchange between neutral and ionized germanium centers in PbSe

   • E. I. Terukov
   • É. S. Khuzhakulov

   Electronic and Optical Properties of Semiconductors Pages: 1371 - 1373

4. Characterization of photonic crystals based on opal-semiconductor composites by Bragg reflection spectroscopy

   • G. M. Gadzhiev
   • V. G. Golubev
   • V. V. Travnikov

   Electronic and Optical Properties of Semiconductors Pages: 1374 - 1380

5. On the effect of transverse quantum confinement on the electrical characteristics of a submicrometer-sized tunnel MOS structure

   • M. I. Vexler
   • I. V. Grekhov
   • A. F. Shulekin

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1381 - 1386

6. Simulation of the capacitance-voltage characteristics of a ferroelectric material

   • L. S. Berman

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1387 - 1390

7. Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC heterojunctions

   • S. Yu. Davydov
   • A. A. Lebedev
   • O. V. Posrednik

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1391 - 1393

8. Measurement of micrometer diffusion lengths by nuclear spectrometry

   • N. B. Strokan
   • A. M. Ivanov
   • R. Yakimova

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1394 - 1398

9. Light-emitting Si:Er structures produced by molecular-beam epitaxy: High-resolution photoluminescence spectroscopy

   • D. I. Kryzhkov
   • N. A. Sobolev
   • E. I. Shek

   Semiconductor Structures, Interfaces, and Surfaces Pages: 1399 - 1402

10. Electrical properties of n-GaN/p-SiC heterojunctions

    • O. Yu. Ledyaev
    • A. M. Strel’chuk
    • A. A. Lebedev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1403 - 1405

11. Photosensitivity of photocells based on ZnO/CdS/Cu(In, Ga)Se₂ heterostructures and exposed to γ-ray radiation

    • V. V. Emtsev
    • Yu. A. Nikolaev
    • M. V. Yakushev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1406 - 1409

12. The tail of localized states in the band gap of the quantum well in the In_0.2Ga_0.8N/GaN system and its effect on the laser-excited photoluminescence spectrum

    • M. A. Jacobson
    • D. K. Nelson
    • A. V. Matveentsev

    Low-Dimensional Systems Pages: 1410 - 1414

13. Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region

    • L. Ya. Karachinsky
    • T. Kettler
    • D. Bimberg

    Physics of Semiconductor Devices Pages: 1415 - 1419

14. The limiting energy resolution of SiC detectors in ion spectrometry

    • N. B. Strokan
    • A. M. Ivanov
    • R. Yakimova

    Physics of Semiconductor Devices Pages: 1420 - 1425

15. “Ideal” static breakdown in high-voltage (1 kV) 4H-SiCp-n junction diodes with guard ring termination

    • P. A. Ivanov
    • I. V. Grekhov
    • T. P. Samsonova

    Physics of Semiconductor Devices Pages: 1426 - 1428

16. Yuri\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Vasil’evich Shmartsev (On the 75th anniversary of his birth)

    Personalia Pages: 1429 - 1430

17. Boris Vasil’evich Tsarenkov (On the 75th anniversary of his birth)

    Personalia Pages: 1431 - 1432