Electroluminescence of graded-gap structures with blocking and ohmic contacts B. S. SokolovskiiV. I. Ivanov-OmskiiG. A. Il’chuk Electronic and Optical Properties of Semiconductors Pages: 1361 - 1368
Mössbauer study of the Ge two-electron donor centers in PbSe E. I. TerukovE. S. Khuzhakulov Electronic and Optical Properties of Semiconductors Pages: 1369 - 1370
Electron exchange between neutral and ionized germanium centers in PbSe E. I. TerukovÉ. S. Khuzhakulov Electronic and Optical Properties of Semiconductors Pages: 1371 - 1373
Characterization of photonic crystals based on opal-semiconductor composites by Bragg reflection spectroscopy G. M. GadzhievV. G. GolubevV. V. Travnikov Electronic and Optical Properties of Semiconductors Pages: 1374 - 1380
On the effect of transverse quantum confinement on the electrical characteristics of a submicrometer-sized tunnel MOS structure M. I. VexlerI. V. GrekhovA. F. Shulekin Semiconductor Structures, Interfaces, and Surfaces Pages: 1381 - 1386
Simulation of the capacitance-voltage characteristics of a ferroelectric material L. S. Berman Semiconductor Structures, Interfaces, and Surfaces Pages: 1387 - 1390
Estimation of the energy characteristics of the 3C-SiC/2H-, 4H-, 6H-, and 8H-SiC heterojunctions S. Yu. DavydovA. A. LebedevO. V. Posrednik Semiconductor Structures, Interfaces, and Surfaces Pages: 1391 - 1393
Measurement of micrometer diffusion lengths by nuclear spectrometry N. B. StrokanA. M. IvanovR. Yakimova Semiconductor Structures, Interfaces, and Surfaces Pages: 1394 - 1398
Light-emitting Si:Er structures produced by molecular-beam epitaxy: High-resolution photoluminescence spectroscopy D. I. KryzhkovN. A. SobolevE. I. Shek Semiconductor Structures, Interfaces, and Surfaces Pages: 1399 - 1402
Electrical properties of n-GaN/p-SiC heterojunctions O. Yu. LedyaevA. M. Strel’chukA. A. Lebedev Semiconductor Structures, Interfaces, and Surfaces Pages: 1403 - 1405
Photosensitivity of photocells based on ZnO/CdS/Cu(In, Ga)Se2 heterostructures and exposed to γ-ray radiation V. V. EmtsevYu. A. NikolaevM. V. Yakushev Semiconductor Structures, Interfaces, and Surfaces Pages: 1406 - 1409
The tail of localized states in the band gap of the quantum well in the In0.2Ga0.8N/GaN system and its effect on the laser-excited photoluminescence spectrum M. A. JacobsonD. K. NelsonA. V. Matveentsev Low-Dimensional Systems Pages: 1410 - 1414
Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region L. Ya. KarachinskyT. KettlerD. Bimberg Physics of Semiconductor Devices Pages: 1415 - 1419
The limiting energy resolution of SiC detectors in ion spectrometry N. B. StrokanA. M. IvanovR. Yakimova Physics of Semiconductor Devices Pages: 1420 - 1425
“Ideal” static breakdown in high-voltage (1 kV) 4H-SiCp-n junction diodes with guard ring termination P. A. IvanovI. V. GrekhovT. P. Samsonova Physics of Semiconductor Devices Pages: 1426 - 1428
Yuri\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Vasil’evich Shmartsev (On the 75th anniversary of his birth) Personalia Pages: 1429 - 1430