1. Interphase interactions and features of structural relaxation in TiB_x-n-GaAs (InP, GaP, 6H-SiC) contacts subjected to active treatment

   • N. S. Boltovets
   • V. N. Ivanov
   • V. V. Milenin

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 737 - 741

2. Local symmetry of the Pb_1−x Sn_xSe lattice near the zero-gap state

   • E. S. Khuzhakulov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 742 - 744

3. Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons

   • V. V. Kozlovskii
   • P. A. Ivanov
   • T. P. Samsonova

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 745 - 750

4. Study of the electrical properties of Cd_xHg_1−x Te

   • P. V. Biryulin
   • V. I. Kosheleva
   • V. I. Turinov

   Electronic and Optical Properties of Semiconductors Pages: 751 - 757

5. Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C

   • E. P. Neustroev
   • S. A. Smagulova
   • L. N. Safronov

   Electronic and Optical Properties of Semiconductors Pages: 758 - 762

6. The role of trapping levels of nonequilibrium electrons during the formation of pinning centers for domain walls in the magnetic semiconductor CdCr₂Se₄

   • A. A. Abdullaev

   Electronic and Optical Properties of Semiconductors Pages: 763 - 768

7. Electrical properties and limiting position of the fermi level in InSb irradiated with protons

   • V. N. Brudnyi
   • V. M. Boiko
   • N. G. Kolin

   Electronic and Optical Properties of Semiconductors Pages: 769 - 774

8. Anomalous solubility of implanted nitrogen in heavily boron-doped silicon

   • D. I. Tetelbaum
   • E. I. Zorin
   • N. V. Lisenkova

   Electronic and Optical Properties of Semiconductors Pages: 775 - 777

9. Specific thermoelectric properties of lightly doped Bi₂(TeSe)₃ solid solutions

   • P. P. Konstantinov
   • L. V. Prokof’eva
   • V. V. Kompaniets

   Electronic and Optical Properties of Semiconductors Pages: 778 - 781

10. Specific features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: II. Analysis of the width and shape of lines

    • A. I. Veinger
    • A. G. Zabrodskii
    • E. N. Mokhov

    Electronic and Optical Properties of Semiconductors Pages: 782 - 787

11. Localization of a longitudinal autosoliton in InSb

    • I. K. Kamilov
    • A. A. Stepurenko
    • A. S. Kovalev

    Electronic and Optical Properties of Semiconductors Pages: 788 - 790

12. Piezospectroscopic study of the emission band of n-GaAs:S peaked at about 1.2 eV

    • A. A. Gutkin
    • M. A. Reshchikov

    Electronic and Optical Properties of Semiconductors Pages: 791 - 795

13. Hysteresis in Ag₂Te near and within the phase transition region

    • S. A. Aliev

    Electronic and Optical Properties of Semiconductors Pages: 796 - 799

14. Resistance of proton-irradiated GaAs photodetectors to combined gamma and neutron radiation

    • A. V. Murel’
    • S. V. Obolenskii
    • E. V. Kiseleva

    Semiconductor Structures, Interfaces, and Surfaces Pages: 800 - 806

15. Radiation resistance of transistor-and diode-type SiC detectors irradiated with 8-MeV protons

    • N. B. Strokan
    • A. M. Ivanov
    • R. Yakimova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 807 - 811

16. Nonlinear properties of phototropic media on the basis of Cu_xSe nanoparticles in quartz glass

    • S. A. Zolotovskaya
    • N. N. Posnov
    • A. A. Alexeenko

    Low-Dimensional Systems Pages: 812 - 817

17. Radiative recombination in Ge⁺-implanted SiO₂ films annealed under hydrostatic pressure

    • I. E. Tyschenko
    • L. Rebohle

    Low-Dimensional Systems Pages: 818 - 823

18. The effect of acoustic phonon confinement on electron scattering in GaAs/Al_xGa_1−x As superlattices

    • S. I. Borisenko

    Low-Dimensional Systems Pages: 824 - 829

19. Kapitsa effect in crystals with superlattices

    • P. V. Gorskii

    Low-Dimensional Systems Pages: 830 - 832

20. Optical and structural properties of InAs quantum dot arrays grown in an In_xGa_1−x As matrix on a GaAs substrate

    • N. V. Kryzhanovskaya
    • A. G. Gladyschev
    • D. Bimberg

    Low-Dimensional Systems Pages: 833 - 836

21. Mechanism of dicke superradiance in semiconductor heterostructures

    • L. Ya. Karachinsky
    • I. I. Novikov
    • G. G. Zegrya

    Low-Dimensional Systems Pages: 837 - 841

22. Manifestation of size-related quantum oscillations of the radiative exciton recombination time in the photoluminescence of silicon nanostructures

    • A. V. Sachenko
    • Yu. V. Kryuchenko
    • O. M. Sreseli

    Low-Dimensional Systems Pages: 842 - 848

23. Ultraviolet luminescence of ZnO infiltrated into an opal matrix

    • V. M. Masalov
    • É. N. Samarov
    • E. E. Yakimov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 849 - 854

24. Leakage currents over the Surface of CdHgTe-based photodiodes

    • P. V. Biryulin
    • V. I. Turinov
    • E. B. Yakimov

    Physics of Semiconductor Devices Pages: 855 - 860