Interphase interactions and features of structural relaxation in TiBx-n-GaAs (InP, GaP, 6H-SiC) contacts subjected to active treatment N. S. BoltovetsV. N. IvanovV. V. Milenin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 737 - 741
Local symmetry of the Pb1−x SnxSe lattice near the zero-gap state E. S. Khuzhakulov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 742 - 744
Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons V. V. KozlovskiiP. A. IvanovT. P. Samsonova Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 745 - 750
Study of the electrical properties of CdxHg1−x Te P. V. BiryulinV. I. KoshelevaV. I. Turinov Electronic and Optical Properties of Semiconductors Pages: 751 - 757
Formation of electrically active centers in silicon irradiated with electrons and then annealed at temperatures of 400–700°C E. P. NeustroevS. A. SmagulovaL. N. Safronov Electronic and Optical Properties of Semiconductors Pages: 758 - 762
The role of trapping levels of nonequilibrium electrons during the formation of pinning centers for domain walls in the magnetic semiconductor CdCr2Se4 A. A. Abdullaev Electronic and Optical Properties of Semiconductors Pages: 763 - 768
Electrical properties and limiting position of the fermi level in InSb irradiated with protons V. N. BrudnyiV. M. BoikoN. G. Kolin Electronic and Optical Properties of Semiconductors Pages: 769 - 774
Anomalous solubility of implanted nitrogen in heavily boron-doped silicon D. I. TetelbaumE. I. ZorinN. V. Lisenkova Electronic and Optical Properties of Semiconductors Pages: 775 - 777
Specific thermoelectric properties of lightly doped Bi2(TeSe)3 solid solutions P. P. KonstantinovL. V. Prokof’evaV. V. Kompaniets Electronic and Optical Properties of Semiconductors Pages: 778 - 781
Specific features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: II. Analysis of the width and shape of lines A. I. VeingerA. G. ZabrodskiiE. N. Mokhov Electronic and Optical Properties of Semiconductors Pages: 782 - 787
Localization of a longitudinal autosoliton in InSb I. K. KamilovA. A. StepurenkoA. S. Kovalev Electronic and Optical Properties of Semiconductors Pages: 788 - 790
Piezospectroscopic study of the emission band of n-GaAs:S peaked at about 1.2 eV A. A. GutkinM. A. Reshchikov Electronic and Optical Properties of Semiconductors Pages: 791 - 795
Hysteresis in Ag2Te near and within the phase transition region S. A. Aliev Electronic and Optical Properties of Semiconductors Pages: 796 - 799
Resistance of proton-irradiated GaAs photodetectors to combined gamma and neutron radiation A. V. Murel’S. V. ObolenskiiE. V. Kiseleva Semiconductor Structures, Interfaces, and Surfaces Pages: 800 - 806
Radiation resistance of transistor-and diode-type SiC detectors irradiated with 8-MeV protons N. B. StrokanA. M. IvanovR. Yakimova Semiconductor Structures, Interfaces, and Surfaces Pages: 807 - 811
Nonlinear properties of phototropic media on the basis of CuxSe nanoparticles in quartz glass S. A. ZolotovskayaN. N. PosnovA. A. Alexeenko Low-Dimensional Systems Pages: 812 - 817
Radiative recombination in Ge+-implanted SiO2 films annealed under hydrostatic pressure I. E. TyschenkoL. Rebohle Low-Dimensional Systems Pages: 818 - 823
The effect of acoustic phonon confinement on electron scattering in GaAs/AlxGa1−x As superlattices S. I. Borisenko Low-Dimensional Systems Pages: 824 - 829
Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate N. V. KryzhanovskayaA. G. GladyschevD. Bimberg Low-Dimensional Systems Pages: 833 - 836
Mechanism of dicke superradiance in semiconductor heterostructures L. Ya. KarachinskyI. I. NovikovG. G. Zegrya Low-Dimensional Systems Pages: 837 - 841
Manifestation of size-related quantum oscillations of the radiative exciton recombination time in the photoluminescence of silicon nanostructures A. V. SachenkoYu. V. KryuchenkoO. M. Sreseli Low-Dimensional Systems Pages: 842 - 848
Ultraviolet luminescence of ZnO infiltrated into an opal matrix V. M. MasalovÉ. N. SamarovE. E. Yakimov Amorphous, Vitreous, and Porous Semiconductors Pages: 849 - 854
Leakage currents over the Surface of CdHgTe-based photodiodes P. V. BiryulinV. I. TurinovE. B. Yakimov Physics of Semiconductor Devices Pages: 855 - 860