1. Genesis of nanoscale defects and damage in GaAs subjected to multipulse quasi-static photostrains in micrometer-sized regions of semiconductor

   • S. V. Vintsents
   • A. V. Zaitseva
   • G. S. Plotnikov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 245 - 252

2. Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing

   • M. V. Ardyshev
   • V. M. Ardyshev
   • Yu. Yu. Kryuchkov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 253 - 257

3. Simulation of the concentration dependence of boron diffusion in silicon

   • O. V. Aleksandrov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 258 - 261

4. Chromium diffusion in gallium arsenide

   • S. S. Khludkov
   • O. B. Koretskaya
   • A. V. Tyazhev

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 262 - 265

5. Special features of Sb₂ and Sb₄ incorporation in MBE-grown AlGaAsSb alloys

   • A. N. Semenov
   • V. S. Sorokin
   • S. V. Ivanov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 266 - 272

6. Determination of gallium concentration in germanium doped using neutron-induced nuclear transmutation from measurements of resistivity in the region of hopping conductivity

   • O. P. Ermolaev
   • T. Yu. Mikul’chik

   Electronic and Optical Properties of Semiconductors Pages: 273 - 276

7. Effect of uniform compression on photoluminescence spectra of GaAs layers heavily doped with beryllium

   • T. S. Shamirzaev
   • K. S. Zhuravlev
   • J. Adamczewska

   Electronic and Optical Properties of Semiconductors Pages: 277 - 280

8. Impedance of solid solutions based on gallium-doped lead telluride

   • B. A. Akimov
   • V. V. Pryadun
   • D. R. Khokhlov

   Electronic and Optical Properties of Semiconductors Pages: 281 - 283

9. Role of space charge in the resistance formation in a bipolar semiconductor sample

   • A. Konin

   Electronic and Optical Properties of Semiconductors Pages: 284 - 287

10. Magnetic investigations of Cd_1−x Zn_xTe (x=0.12, 0.21) wide-gap semiconductors

    • Yu. V. Shaldin
    • I. Warchulska
    • V. K. Komar’

    Electronic and Optical Properties of Semiconductors Pages: 288 - 292

11. Transport phenomena in coarse-grain CdTe polycrystals

    • S. A. Kolosov
    • Yu. V. Klevkov
    • A. F. Plotnikov

    Electronic and Optical Properties of Semiconductors Pages: 293 - 297

12. A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy

    • A. P. Odrinskii

    Electronic and Optical Properties of Semiconductors Pages: 298 - 303

13. The role of alloying effects in the formation of electronic structure of unordered Group III nitride solid solutions

    • A. V. Voznyy
    • V. G. Deibuk

    Electronic and Optical Properties of Semiconductors Pages: 304 - 309

14. Optical properties of polycrystalline zinc selenide

    • A. N. Bryzgalov
    • V. V. Musatov
    • V. V. Buz’ko

    Electronic and Optical Properties of Semiconductors Pages: 310 - 312

15. Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge⁺ ions

    • V. S. Avrutin
    • Yu. A. Agafonov
    • T. G. Yugova

    Semiconductor Structures, Interfaces, and Surfaces Pages: 313 - 318

16. Native disorder potential at the surface of a heavily doped semiconductor

    • V. B. Bondarenko
    • V. V. Korablev
    • Yu. I. Ravich

    Semiconductor Structures, Interfaces, and Surfaces Pages: 319 - 321

17. Spectral line broadening in quantum wells due to the coulomb interaction of carriers

    • A. A. Afonenko

    Low-Dimensional Systems Pages: 322 - 328

18. Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate

    • V. G. Dubrovskii
    • Yu. G. Musikhin
    • V. M. Ustinov

    Low-Dimensional Systems Pages: 329 - 334

19. Quantum confined stark effect and electroabsorption in semiconductor spherical layers

    • V. A. Arutyunyan
    • K. S. Aramyan
    • G. Sh. Petrosyan

    Low-Dimensional Systems Pages: 335 - 339

20. Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy

    • I. P. Soshnikov
    • N. V. Kryzhanovskaya
    • D. Bimberg

    Low-Dimensional Systems Pages: 340 - 343

21. Diffusion of chromium in thin hydrogenated amorphous silicon films

    • S. K. Persheyev
    • P. R. Drapacz
    • A. G. Fitzgerald

    Amorphous, Vitreous, and Porous Semiconductors Pages: 344 - 346

22. Temperature dependence of electroluminescence of Er ions in tunnel diodes based on (111)Si:(Er, O)

    • A. M. Emel’yanov
    • N. A. Sobolev

    Physics of Semiconductor Devices Pages: 347 - 351

23. Blue-green radiation in GaAs-based quantum-well lasers

    • N. V. Baidus’
    • A. A. Biryukov
    • V. Ya. Aleshkin

    Physics of Semiconductor Devices Pages: 352 - 354

24. GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques

    • V. M. Andreev
    • V. P. Khvostikov
    • M. Z. Shvarts

    Physics of Semiconductor Devices Pages: 355 - 359

25. Internal optical loss in semiconductor lasers

    • N. A. Pikhtin
    • S. O. Slipchenko
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 360 - 367