Genesis of nanoscale defects and damage in GaAs subjected to multipulse quasi-static photostrains in micrometer-sized regions of semiconductor S. V. VintsentsA. V. ZaitsevaG. S. Plotnikov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 245 - 252
Effects of predoping and implantation conditions on diffusion of silicon in gallium arsenide subjected to electron-beam annealing M. V. ArdyshevV. M. ArdyshevYu. Yu. Kryuchkov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 253 - 257
Simulation of the concentration dependence of boron diffusion in silicon O. V. Aleksandrov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 258 - 261
Chromium diffusion in gallium arsenide S. S. KhludkovO. B. KoretskayaA. V. Tyazhev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 262 - 265
Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys A. N. SemenovV. S. SorokinS. V. Ivanov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 266 - 272
Determination of gallium concentration in germanium doped using neutron-induced nuclear transmutation from measurements of resistivity in the region of hopping conductivity O. P. ErmolaevT. Yu. Mikul’chik Electronic and Optical Properties of Semiconductors Pages: 273 - 276
Effect of uniform compression on photoluminescence spectra of GaAs layers heavily doped with beryllium T. S. ShamirzaevK. S. ZhuravlevJ. Adamczewska Electronic and Optical Properties of Semiconductors Pages: 277 - 280
Impedance of solid solutions based on gallium-doped lead telluride B. A. AkimovV. V. PryadunD. R. Khokhlov Electronic and Optical Properties of Semiconductors Pages: 281 - 283
Role of space charge in the resistance formation in a bipolar semiconductor sample A. Konin Electronic and Optical Properties of Semiconductors Pages: 284 - 287
Magnetic investigations of Cd1−x ZnxTe (x=0.12, 0.21) wide-gap semiconductors Yu. V. ShaldinI. WarchulskaV. K. Komar’ Electronic and Optical Properties of Semiconductors Pages: 288 - 292
Transport phenomena in coarse-grain CdTe polycrystals S. A. KolosovYu. V. KlevkovA. F. Plotnikov Electronic and Optical Properties of Semiconductors Pages: 293 - 297
A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy A. P. Odrinskii Electronic and Optical Properties of Semiconductors Pages: 298 - 303
The role of alloying effects in the formation of electronic structure of unordered Group III nitride solid solutions A. V. VoznyyV. G. Deibuk Electronic and Optical Properties of Semiconductors Pages: 304 - 309
Optical properties of polycrystalline zinc selenide A. N. BryzgalovV. V. MusatovV. V. Buz’ko Electronic and Optical Properties of Semiconductors Pages: 310 - 312
Low-temperature relaxation of elastic stresses in SiGe/Si heterostructures irradiated with Ge+ ions V. S. AvrutinYu. A. AgafonovT. G. Yugova Semiconductor Structures, Interfaces, and Surfaces Pages: 313 - 318
Native disorder potential at the surface of a heavily doped semiconductor V. B. BondarenkoV. V. KorablevYu. I. Ravich Semiconductor Structures, Interfaces, and Surfaces Pages: 319 - 321
Spectral line broadening in quantum wells due to the coulomb interaction of carriers A. A. Afonenko Low-Dimensional Systems Pages: 322 - 328
Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate V. G. DubrovskiiYu. G. MusikhinV. M. Ustinov Low-Dimensional Systems Pages: 329 - 334
Quantum confined stark effect and electroabsorption in semiconductor spherical layers V. A. ArutyunyanK. S. AramyanG. Sh. Petrosyan Low-Dimensional Systems Pages: 335 - 339
Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy I. P. SoshnikovN. V. KryzhanovskayaD. Bimberg Low-Dimensional Systems Pages: 340 - 343
Diffusion of chromium in thin hydrogenated amorphous silicon films S. K. PersheyevP. R. DrapaczA. G. Fitzgerald Amorphous, Vitreous, and Porous Semiconductors Pages: 344 - 346
Temperature dependence of electroluminescence of Er ions in tunnel diodes based on (111)Si:(Er, O) A. M. Emel’yanovN. A. Sobolev Physics of Semiconductor Devices Pages: 347 - 351
Blue-green radiation in GaAs-based quantum-well lasers N. V. Baidus’A. A. BiryukovV. Ya. Aleshkin Physics of Semiconductor Devices Pages: 352 - 354
GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques V. M. AndreevV. P. KhvostikovM. Z. Shvarts Physics of Semiconductor Devices Pages: 355 - 359
Internal optical loss in semiconductor lasers N. A. PikhtinS. O. SlipchenkoI. S. Tarasov Physics of Semiconductor Devices Pages: 360 - 367