The role of Dmitri\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Nikolaevich Nasledov in the formation and development of the physics and technology of III–V semiconductors O. V. Emel’yanenkoN. M. KolchanovaYu. P. Yakovlev OriginalPaper Pages: 867 - 871
ESR of interacting manganese centers in gallium arsenide K. F. Shtel’makhM. P. KorobkovI. G. Ozerov Electronic and Optical Properties of Semiconductors Pages: 872 - 875
Interaction of charge carriers with the localized magnetic moments of manganese atoms in p-GaInAsSb/p-InAs:Mn heterostructures T. S. LagunovaT. I. VoroninaYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 876 - 883
Analysis of the emission band of V GaTeAs complexes in n-GaAs under uniaxial pressure A. A. GutkinA. V. Ermakova Electronic and Optical Properties of Semiconductors Pages: 884 - 888
A Mössbauer study of Fe impurity atoms in gallium arsenide P. P. SereginT. R. StepanovaV. P. Volkov Electronic and Optical Properties of Semiconductors Pages: 889 - 893
Rare-earth elements in the technology of III–V compounds and devices based on these compounds A. T. GorelenokA. V. KamaninN. M. Shmidt Electronic and Optical Properties of Semiconductors Pages: 894 - 914
Electromagnetic effect in high-temperature superconductivity: 15 years of investigations (1987–2002) at the Department of Experimental Physics of St. Petersburg State Technical University A. V. Prikhod’ko Electronic and Optical Properties of Semiconductors Pages: 915 - 917
The relaxation of the neutral state of manganese in gallium arsenide V. F. MasterovK. F. Shtel’makhB. E. Samorukov Electronic and Optical Properties of Semiconductors Pages: 918 - 922
Photosensitive structures based on boron phosphide single crystals Yu. A. NikolaevV. Yu. Rud’E. I. Terukov Semiconductor Structures, Interfaces, and Surfaces Pages: 923 - 926
Negative luminescence at 3.9 µm in InGaAsSb-based diodes M. AidaralievN. V. ZotovaG. N. Talalakin Semiconductor Structures, Interfaces, and Surfaces Pages: 927 - 930
Wet chemical nitridation of (100)GaAs surface: Effect on electrical parameters of surface-barrier Au-Ti/GaAs structures T. V. L’vovaV. L. BerkovitsV. P. Ulin Semiconductor Structures, Interfaces, and Surfaces Pages: 931 - 935
On the charge-transport mechanisms in Cr-n-InP and Mo-n-InP diode structures S. V. SlobodchikovKh. M. SalikhovB. E. Samorukov Semiconductor Structures, Interfaces, and Surfaces Pages: 936 - 939
Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon V. N. BessolovYu. V. ZhilyaevD. R. T. Zahn Low-Dimensional Systems Pages: 940 - 943
Ultraviolet radiation photodetectors based on structures consisting of a metal and a wide-bandgap semiconductor T. V. BlankYu. A. Gol’dbergE. A. Posse Physics of Semiconductor Devices Pages: 944 - 948
High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area I. A. AndreevN. D. Il’inskayaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 949 - 954
Characterization of light-emitting diodes based on InAsSbP/InAsSb structures grown by metal-organic vapor-phase epitaxy N. V. ZotovaS. S. KizhaevYu. P. Yakovlev Physics of Semiconductor Devices Pages: 955 - 959
Single-mode fast-tunable lasers for laser-diode spectroscopy A. P. AstakhovaT. N. DanilovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 960 - 970
High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring N. D. StoyanovB. E. ZhurtanovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 971 - 984
Special features of spontaneous and coherent emission of IR lasers based on a single type-II broken-gap heterojunction K. D. MoiseevM. P. MikhailovaYu. P. Yakovlev Physics of Semiconductor Devices Pages: 985 - 991
Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures É. P. DomashevskayaV. A. TerekhovZh. I. Alferov Low-Dimensional Systems Pages: 992 - 997
