Changes in the state of phosphorus atoms in the silicon lattice as a result of interaction with radiation defects V. V. BolotovG. N. KamaevL. S. Smirnov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 363 - 366
Ultrasonically stimulated low-temperature redistribution of impurities in silicon I. V. OstrovskiiA. B. NadtochiiA. A. Podolyan Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 367 - 369
Simulation of low-temperature arsenic diffusion from a heavily doped silicon layer O. V. Aleksandrov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 370 - 374
Generalized character of the dielectric response of CdTe crystals grown from the melt I. A. KlimenkoV. P. Migal’ Electronic and Optical Properties of Semiconductors Pages: 375 - 378
Effect of the radial electric field on absorption in a quantized spherical layer V. A. Arutyunyan Electronic and Optical Properties of Semiconductors Pages: 379 - 381
Photoelectric C-V profiling of majority charge carriers and effective lifetimes of minority charge carriers in gettered GaAs wafers V. F. AndrievskiiA. T. GorelenokN. M. Shmidt Electronic and Optical Properties of Semiconductors Pages: 382 - 384
Effective electron mass in heavily doped GaAs in the ordering of impurity complexes V. A. BogdanovaN. A. Davletkil’deevE. N. Sidorov Electronic and Optical Properties of Semiconductors Pages: 385 - 389
Determination of the matrix element of the quasi-momentum operator in the zero-gap semiconductor HgSe by the field-effect method in electrolyte O. Yu. ShevchenkoV. F. RadantsevA. D. Perepelkin Electronic and Optical Properties of Semiconductors Pages: 390 - 393
Energy transfer of Ce3+ → Eu2+ in the CaGa2S4 compound R. B. Dzhabbarov Electronic and Optical Properties of Semiconductors Pages: 394 - 397
Features of optical properties of AlxGa1−x N solid solutions V. G. DeibukA. V. VoznyiM. M. Sletov Electronic and Optical Properties of Semiconductors Pages: 398 - 403
Increase in quantum efficiency of IR emission in elastically strained narrow-gap semiconductors S. G. Gasan-zadeM. V. StrikhaV. A. Boiko Electronic and Optical Properties of Semiconductors Pages: 404 - 409
Analysis and refinement of mathematical tools for modified time-of-flight method S. P. VikhrovN. V. VishnyakovV. G. Mishustin Electronic and Optical Properties of Semiconductors Pages: 410 - 413
Causes of variation in the static current-voltage characteristics of the structures with the Me/n-n +-GaAs Schottky barrier on hydrogenation N. A. Torkhov Semiconductor Structures, Interfaces, and Surfaces Pages: 414 - 419
Field effect in a system consisting of electrolyte and (TlBiSe2)1−x -(TlBiS2)x solid solution O. Yu. ShevchenkoA. M. YafyasovA. D. Perepelkin Semiconductor Structures, Interfaces, and Surfaces Pages: 420 - 423
Effect of surface on the excitonic characteristics of semiconductors V. G. LitovchenkoN. L. DmitrukA. V. Sarikov Semiconductor Structures, Interfaces, and Surfaces Pages: 424 - 429
Nature of the edge electroluminescence peak in the Si:(Er,O) diode breakdown mode A. M. Emel’yanovYu. A. NikolaevN. A. Sobolev Semiconductor Structures, Interfaces, and Surfaces Pages: 430 - 433
Control of the interband and intersubband transition energy in quantum wells using localized isoelectronic perturbations K. DurinyanA. ZatikyanS. Petrosyan Low-Dimensional Systems Pages: 434 - 438
Quantized conductance in silicon quantum wires N. T. BagraevA. D. BuravlevI. A. Shelykh Low-Dimensional Systems Pages: 439 - 460
Exciton recombination in δ-doped type-II GaAs/AlAs superlattices K. S. ZhuravlevA. K. SulaimanovA. K. Bakarov Low-Dimensional Systems Pages: 461 - 465
The effect of adsorption on the electrical properties of structures based on oxidized porous silicon D. I. BilenkoO. Ya. BelobrovayaE. I. Khasina Amorphous, Vitreous, and Porous Semiconductors Pages: 466 - 471
Special features of electron drift in submicrometer GaAs structures V. A. Gergel’E. Yu. Kul’kovaG. Yu. Khrenov Physics of Semiconductor Devices Pages: 472 - 475
Long-term variation of electrical and photoelectric characteristics of Pd-p-InP diode structures S. V. SlobodchikovKh. M. SalikhovE. V. Russu Physics of Semiconductor Devices Pages: 476 - 479