Effect of dynamic aging of dislocations on the deformation behavior of extrinsic semiconductors B. V. Petukhov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 121 - 125
Electrical properties of silicon layers implanted with ytterbium ions O. V. AleksandrovA. O. Zakhar’inN. A. Sobolev Electronic and Optical Properties of Semiconductors Pages: 126 - 129
Effect of optical radiation on internal friction in piezoelectric semiconductors with deep-level centers V. I. MitrokhinS. I. RembezaN. P. Yaroslavtsev Electronic and Optical Properties of Semiconductors Pages: 130 - 135
“LO-Phonon” correlation between picosecond superluminescence spectrum and special features of absorption spectrum in GaAs for non-Fermi distribution of carriers induced by picosecond light pulse N. N. AgeevaI. L. BronevoiS. V. Stegantsov Electronic and Optical Properties of Semiconductors Pages: 136 - 140
Linear photovoltaic effect in gyrotropic crystals R. Ya. RasulovYu. E. SalenkoD. Kambarov Electronic and Optical Properties of Semiconductors Pages: 141 - 147
Optical properties of fluorite in a wide energy range V. V. SobolevA. I. Kalugin Electronic and Optical Properties of Semiconductors Pages: 148 - 152
Influence of laser pump density on the characteristic time constant and the intermediate-field electromodulation E 0 component of the photoreflectance signal R. V. Kuz’menkoA. V. GanzhaJ. Schreiber Electronic and Optical Properties Of Semiconductors Pages: 153 - 156
Effect of ionization on the behavior of silicon in gallium arsenide subjected to electron-beam annealing M. V. ArdyshevV. M. Ardyshev Electronic and Optical Properties of Semiconductors Pages: 157 - 159
Annealing of deep boron centers in silicon carbide V. S. BallandovichE. N. Mokhov Electronic and Optical Properties of Semiconductors Pages: 160 - 166
Edge-photoluminescence concentration dependence in semi-insulating undoped GaAs V. F. KovalenkoM. B. LitvinovaS. V. Shutov Electronic and Optical Properties of Semiconductors Pages: 167 - 170
Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy V. B. ShmaginB. A. AndreevG. Pensl Electronic and Optical Properties of Semiconductors Pages: 171 - 175
Optical absorption in (Pb0.78Sn0.22)1−X InXTe (X=0.001–0.005) A. N. Veis Electronic and Optical Properties of Semiconductors Pages: 176 - 179
Distribution of charge carriers in dissipative semiconductor structures I. K. KamilovA. A. StepurenkoA. S. Kovalev Electronic and Optical Properties of Semiconductors Pages: 180 - 184
The effect of charge-carrier drift in the built-in quasi-electric field on the emission spectrum for graded-gap semiconductors V. F. KovalenkoA. Yu. MironchenkoS. V. Shutov Electronic and Optical Properties of Semiconductors Pages: 185 - 188
Silicon surface treatment by pulsed nitrogen plasma F. B. BaimbetovB. M. IbraevA. M. Zhukeshov Semiconductor Structure, Interfaces, and Surfaces Pages: 189 - 190
Role of surface segregation in formation of abrupt interfaces in Si/Si1−x Gex heterocompositions grown by molecular-beam epitaxy with combined sources L. K. OrlovN. L. Ivina Semiconductor Structures, Interfaces, and Surfaces Pages: 191 - 196
Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures S. G. DmitrievYu. V. Markin Semiconductor Structures, Interfaces, and Surfaces Pages: 197 - 202
Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma Yu. A. BumaiG. GobschT. S. Cheng Low-Dimensional Systems Pages: 203 - 207
Energy spectrum and optical properties of the quantum dot-impurity center complex V. D. KrevchikA. V. Levashov Low-Dimensional System Pages: 208 - 212
Injection excitation of luminescence in multilayer nc-Si/insulator structures Yu. A. BerashevichB. V. KamenevV. E. Borisenko Low-Dimensional Systems Pages: 213 - 218
Temperature dependence of the optical energy gap for the CdSxSe1−x quantum dots V. P. KunetsN. R. KulishN. I. Malysh Low-Dimensional Systems Pages: 219 - 223
The dicke superradiation in quantum heterostructures under optical pumping A. I. KlimovskayaE. G. GuleYu. A. Driga Low-Dimensional Systems Pages: 224 - 225
Electroluminescence from AlGaAs/GaAs quantum-cascade structures in the terahertz range N. N. Zinov’evA. V. AndrianovJ. M. Chamberlain Low-Dimensional Systems Pages: 226 - 229
Effect of thermal treatment on structure and properties of a-Si:H films obtained by cyclic deposition V. P. Afanas’evA. S. GudovskikhE. I. Terukov Amorphous, Vitreous, and Porous Semiconductors Pages: 230 - 234
Optimal doping of the drift region in unipolar diodes and transistors A. S. Kyuregyan Physics of Semiconductor Devices Pages: 235 - 238