Influence of segregation on the composition of GaAs1−x Sbx solid solutions grown by liquid-phase epitaxy Yu. F. Biryulin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1323 - 1325
Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects J. PartykaP. W. ŽukowskiYu. A. Shostak Electronic and Optical Properties of Semiconductors Pages: 1326 - 1331
The mechanisms of hole scattering in p-Hg0.8Cd0.2Te crystals at low temperatures V. V. Bogoboyashchii Electronic and Optical Properties of Semiconductors Pages: 1332 - 1340
A DLTS study of deep levels in the band gap of textured stoichiometric p-CdTe polycrystals E. A. BobrovaYu. V. KlevkovA. F. Plotnikov Electronic and Optical Properties of Semiconductors Pages: 1341 - 1346
Electron spin resonance in Cd1−x MnxTe and Zn1−x MnxTe compounds J. PartykaP. W. ŽukowskiYu. A. Shostak Electronic and Optical Properties of Semiconductors Pages: 1347 - 1351
Deep levels in the band gap of GaN layers irradiated with protons M. M. SobolevN. A. SobolevV. O. Naidenov Semiconductor Structures, Interfaces, and Surfaces Pages: 1352 - 1354
Band-edge line-up in GaAs/GaAsN/InGaAs heterostructures A. Yu. EgorovV. A. OdnoblyudovV. M. Ustinov Semiconductor Structures, Interfaces, and Surfaces Pages: 1355 - 1359
Analysis of inelastic scattering of quasi-two-dimensional electrons of a superlattice by acoustic phonons with allowance made for the miniband dispersion S. I. Borisenko Low-Dimensional Systems Pages: 1360 - 1363
Damping of bloch oscillations in quantum dot superlattices: A general approach I. A. DmitrievR. A. Suris Low-Dimensional Systems Pages: 1364 - 1374
Damping of bloch oscillations in one-, two-, and three-dimensional quantum-dot superlattices I. A. DmitrievR. A. Suris Low-Dimensional Systems Pages: 1375 - 1384
MBE growth and photoluminescent properties of InAsSb/AlSbAs quantum wells V. A. Solov’evYa. V. Terent’evP. S. Kop’ev Low-Dimensional Systems Pages: 1385 - 1388
Weak antilocalization and spin-orbit interaction in a In0.53Ga0.47As/InP quantum well in the persistent photoconductivity state D. D. BykanovS. V. NovikovI. G. Savel’ev Low-Dimensional Systems Pages: 1389 - 1397
Isotope-pure 28Si layers grown by VPE O. N. GodisovA. K. KaliteevskyV. L. Sukhanov Physics of Semiconductor Devices Pages: 1398 - 1399
Isotope-pure silicon layers grown by MBE O. N. GodisovA. K. KaliteevskyH. -J. Pohl Physics of Semiconductor Devices Pages: 1400 - 1402