1. Doping of semiconductors using radiation defects produced by irradiation with protons and alpha particles

   • V. A. Kozlov
   • V. V. Kozlovski

   Reviews Pages: 735 - 761

2. The microstructure and physical properties of thin SnO₂ films

   • S. I. Rembeza
   • T. V. Svistova
   • O. I. Borsyakova

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 762 - 765

3. The accuracy of reconstructing the semiconductor doping profile from capacitance-voltage characteristics measured during electrochemical etching

   • I. R. Karetnikova
   • I. M. Nefedov
   • V. I. Shashkin

   Electronic and Optical Properties of Semiconductors Pages: 766 - 772

4. Optical properties of Cd_1−x Zn_xTe (0<x<0.1) single crystals in the infrared spectral region

   • A. I. Belogorokhov
   • V. M. Lakeenkov
   • L. I. Belogorokhova

   Electronic and Optical Properties of Semiconductors Pages: 773 - 776

5. Metallic conductivity over an acceptor band of lightly compensated copper-doped p-Hg_0.78Cd_0.22Te crystals

   • V. V. Bogoboyashchii

   Electronic and Optical Properties of Semiconductors Pages: 777 - 783

6. Fermi level pinning and electrical properties of irradiated Cd_xHg_1−x Te alloys

   • V. N. Brudnyi
   • S. N. Grinyaev

   Electronic and Optical Properties of Semiconductors Pages: 784 - 787

7. Effect of ballistic electron transport in metal-n-GaAs-n ⁺-GaAs Schottky-barrier structures

   • N. A. Torkhov

   Semiconductor Structures, Interfaces, and Surfaces Pages: 788 - 795

8. Calculation of the variation in the work function caused by adsorption of metal atoms on semiconductors

   • S. Yu. Davydov
   • A. V. Pavlyk

   Semiconductor Structures, Interfaces, and Surfaces Pages: 796 - 799

9. Charge transport in HgCdTe-based n ⁺-p photodiodes

   • J. V. Gumenjuk-Sichevskaja
   • F. F. Sizov
   • D. G. Esaev

   Semiconductor Structures, Interfaces, and Surfaces Pages: 800 - 806

10. Electronic state mixing in X _x and X _y valleys in AlAs/GaAs (001)

    • G. F. Karavaev
    • V. N. Chernyshov

    Low-Dimensional Systems Pages: 807 - 815

11. Adsorption-based porosimetry using capacitance measurements

    • E. A. Tutov
    • A. Yu. Andryukov
    • E. N. Bormontov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 816 - 820

12. Structural transformations and silicon nanocrystallite formation in SiO_x films

    • V. Ya. Bratus’
    • V. A. Yukhimchuk
    • I. B. Yanchuk

    Amorphous, Vitreous, and Porous Semiconductors Pages: 821 - 826

13. Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence

    • V. E. Kudryashov
    • S. S. Mamakin
    • F. I. Manyakhin

    Physics of Semiconductor Devices Pages: 827 - 834

14. Interaction of metal nanoparticles with a semiconductor in surface-doped gas sensors

    • S. V. Ryabtsev
    • E. A. Tutov
    • A. V. Ivanov

    Physics of Semiconductor Devices Pages: 835 - 839

15. Cross-sectional electrostatic force microscopy of semiconductor laser diodes

    • A. V. Ankudinov
    • E. Yu. Kotel’nikov
    • A. N. Titkov

    Physics of Semiconductor Devices Pages: 840 - 846

16. Comparative analysis of long-wavelength (1.3 µm) VCSELs on GaAs substrates

    • N. A. Maleev
    • A. Yu. Egorov
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 847 - 853

17. 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them

    • A. V. Sakharov
    • I. L. Krestnikov
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 854 - 859