1. Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

   • O. P. Pchelyakov
   • Yu. B. Bolkhovityanov
   • B. Voigtländer

   Reviews Pages: 1229 - 1247

2. Internal microstrain and distribution of composition and cathodoluminescence over lapped Al_xGa_1−x N epilayers on sapphire

   • A. S. Usikov
   • V. V. Tret’yakov
   • N. M. Shmidt

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1248 - 1254

3. Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

   • L. S. Vavilova
   • V. A. Kapitonov
   • I. S. Tarasov

   Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1255 - 1258

4. Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals

   • K. D. Glinchuk
   • N. M. Litovchenko
   • O. N. Stril’chuk

   Electronic and Optical Properties of Semiconductors Pages: 1259 - 1263

5. Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals

   • O. A. Matveev
   • A. I. Terent’ev

   Electronic and Optical Properties of Semiconductors Pages: 1264 - 1269

6. A quasi-linear photorefractive effect in silicon

   • A. L. Filatov

   Electronic and Optical Properties of Semiconductors Pages: 1270 - 1274

7. Fabrication and photoelectronic properties of ZnTe single crystals and Schottky diodes

   • G. A. Il’chuk
   • V. I. Ivanov-Omskii
   • N. A. Ukrainets

   Electronic and Optical Properties of Semiconductors Pages: 1275 - 1280

8. Quasi-localized states and resonance scattering of particles by defects in semiconductor crystals with band spectrum structure

   • S. E. Savotchenko

   Electronic and Optical Properties of Semiconductors Pages: 1281 - 1286

9. Magneto-optical study of bismuth at 80–280 K

   • V. M. Grabov
   • K. G. Ivanov
   • A. A. Zaitsev

   Electronic and Optical Properties of Semiconductors Pages: 1287 - 1289

10. Stimulation of luminescence in graded-gap Al_xGa_1−x As semiconductors

    • K. Požela
    • R. -A. Bendorius
    • A. Šilenas

    Electronic and Optical Properties of Semiconductors Pages: 1290 - 1294

11. Photoelectric properties of isotype and anisotype Si/GaN:O heterojunctions

    • S. E. Aleksandrov
    • T. A. Gavrikova
    • V. A. Zykov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1295 - 1300

12. Nanorelief of a GaN surface: The effect of sulfide treatment

    • V. N. Bessolov
    • Yu. V. Zhilyaev
    • V. A. Fedirko

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1301 - 1304

13. The dislocation origin and model of excess tunnel current in GaP p-n structures

    • V. V. Evstropov
    • M. Dzhumaeva
    • L. M. Fedorov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1305 - 1310

14. Photoresistance of Si/Ge/Si structures with germanium quantum dots

    • O. A. Shegai
    • K. S. Zhuravlev
    • O. P. Pchelyakov

    Low-Dimensional Systems Pages: 1311 - 1315

15. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm

    • B. V. Volovik
    • D. S. Sizov
    • G. É. Tsyrlin

    Low-Dimensional Systems Pages: 1316 - 1320

16. A nonlinear theory of coherent oscillations in a resonance tunnel diode in a wide frequency range

    • V. F. Elesin
    • I. Yu. Kateev
    • A. I. Podlivaev

    Low-Dimensional Systems Pages: 1321 - 1326

17. Optical-absorption spectra of PbS/C-based Fibonacci superlattices with phonon-assisted transitions

    • S. F. Musikhin
    • O. V. Rabizo
    • L. V. Sharonova

    Low-Dimensional Systems Pages: 1327 - 1329

18. Electrical properties of hydrogenated amorphous Ge_0.90Si_0.1:H_x films

    • B. A. Nadzhafov

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1330 - 1333

19. Photoresponse and electroluminescence of silicon-〈porous silicon〉-〈chemically deposited metal〉 structures

    • L. V. Belyakov
    • D. N. Goryachev
    • O. M. Sreseli

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1334 - 1337

20. Laser waveguide with a reverse gradient of the refractive index

    • E. Yu. Kotel’nikov
    • I. V. Kudryashov
    • V. P. Evtikhiev

    Physics of Semiconductor Devices Pages: 1338 - 1340

21. The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-based laser diodes

    • E. Yu. Kotel’nikov
    • A. A. Katsnel’son
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 1341 - 1342

22. InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I

    • T. N. Danilova
    • A. N. Imenkov
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 1343 - 1350

23. A coherent laser based on a two-well structure

    • V. F. Elesin
    • A. V. Tsukanov

    Physics of Semiconductor Devices Pages: 1351 - 1354