Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties O. P. PchelyakovYu. B. BolkhovityanovB. Voigtländer Reviews Pages: 1229 - 1247
Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−x N epilayers on sapphire A. S. UsikovV. V. Tret’yakovN. M. Shmidt Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1248 - 1254
Epitaxial deposition of InGaAsP solid solutions in the miscibility gap L. S. VavilovaV. A. KapitonovI. S. Tarasov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1255 - 1258
Influence of heat treatment on luminescence of semi-insulating undoped GaAs crystals K. D. GlinchukN. M. LitovchenkoO. N. Stril’chuk Electronic and Optical Properties of Semiconductors Pages: 1259 - 1263
Basic principles of postgrowth annealing of CdTe:Cl ingot to obtain semi-insulating crystals O. A. MatveevA. I. Terent’ev Electronic and Optical Properties of Semiconductors Pages: 1264 - 1269
A quasi-linear photorefractive effect in silicon A. L. Filatov Electronic and Optical Properties of Semiconductors Pages: 1270 - 1274
Fabrication and photoelectronic properties of ZnTe single crystals and Schottky diodes G. A. Il’chukV. I. Ivanov-OmskiiN. A. Ukrainets Electronic and Optical Properties of Semiconductors Pages: 1275 - 1280
Quasi-localized states and resonance scattering of particles by defects in semiconductor crystals with band spectrum structure S. E. Savotchenko Electronic and Optical Properties of Semiconductors Pages: 1281 - 1286
Magneto-optical study of bismuth at 80–280 K V. M. GrabovK. G. IvanovA. A. Zaitsev Electronic and Optical Properties of Semiconductors Pages: 1287 - 1289
Stimulation of luminescence in graded-gap AlxGa1−x As semiconductors K. PoželaR. -A. BendoriusA. Šilenas Electronic and Optical Properties of Semiconductors Pages: 1290 - 1294
Photoelectric properties of isotype and anisotype Si/GaN:O heterojunctions S. E. AleksandrovT. A. GavrikovaV. A. Zykov Semiconductor Structures, Interfaces, and Surfaces Pages: 1295 - 1300
Nanorelief of a GaN surface: The effect of sulfide treatment V. N. BessolovYu. V. ZhilyaevV. A. Fedirko Semiconductor Structures, Interfaces, and Surfaces Pages: 1301 - 1304
The dislocation origin and model of excess tunnel current in GaP p-n structures V. V. EvstropovM. DzhumaevaL. M. Fedorov Semiconductor Structures, Interfaces, and Surfaces Pages: 1305 - 1310
Photoresistance of Si/Ge/Si structures with germanium quantum dots O. A. ShegaiK. S. ZhuravlevO. P. Pchelyakov Low-Dimensional Systems Pages: 1311 - 1315
The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm B. V. VolovikD. S. SizovG. É. Tsyrlin Low-Dimensional Systems Pages: 1316 - 1320
A nonlinear theory of coherent oscillations in a resonance tunnel diode in a wide frequency range V. F. ElesinI. Yu. KateevA. I. Podlivaev Low-Dimensional Systems Pages: 1321 - 1326
Optical-absorption spectra of PbS/C-based Fibonacci superlattices with phonon-assisted transitions S. F. MusikhinO. V. RabizoL. V. Sharonova Low-Dimensional Systems Pages: 1327 - 1329
Electrical properties of hydrogenated amorphous Ge0.90Si0.1:Hx films B. A. Nadzhafov Amorphous, Vitreous, and Porous Semiconductors Pages: 1330 - 1333
Photoresponse and electroluminescence of silicon-〈porous silicon〉-〈chemically deposited metal〉 structures L. V. BelyakovD. N. GoryachevO. M. Sreseli Amorphous, Vitreous, and Porous Semiconductors Pages: 1334 - 1337
Laser waveguide with a reverse gradient of the refractive index E. Yu. Kotel’nikovI. V. KudryashovV. P. Evtikhiev Physics of Semiconductor Devices Pages: 1338 - 1340
The power density giving rise to optical degradation of mirrors in InGaAs/AlGaAs/GaAs-based laser diodes E. Yu. Kotel’nikovA. A. Katsnel’sonZh. I. Alferov Physics of Semiconductor Devices Pages: 1341 - 1342
InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I T. N. DanilovaA. N. ImenkovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 1343 - 1350
A coherent laser based on a two-well structure V. F. ElesinA. V. Tsukanov Physics of Semiconductor Devices Pages: 1351 - 1354