1. Boris Petrovich Zakharchenya (on his 70th birthday)

   • Editorial Board of the journal “Semiconductors”

   Personalia Pages: 573 - 574

2. The role of macrodefects in electronic and ionic processes in wide-band II–VI semiconductors

   • B. R. Dzhumaev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 575 - 579

3. One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II–VI semiconductor crystals

   • N. I. Tarbaev
   • G. A. Shepel’skii

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 580 - 586

4. Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy

   • M. V. Bestaev
   • D. Ts. Dimitrov
   • F. Steitz

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 587 - 589

5. Self-organizing nanoheterostructures in InGaAsP solid solutions

   • L. S. Vavilova
   • A. V. Ivanova
   • N. N. Faleev

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 590 - 593

6. Pressure-induced insulator-metal transition in electron-irradiated Pb_1−x Sn_xSe (x⩽0.03) alloys

   • E. P. Skipetrov
   • E. A. Zvereva
   • L. A. Skipetrova

   Electronic and Optical Properties of Semiconductors Pages: 594 - 598

7. Identifying the parameters of impurity levels in high-resistance semiconductor crystals by means of thermally stimulated currents with dosed illumination of the samples

   • P. G. Kasherininov
   • D. G. Matyukhin

   Electronic and Optical Properties of Semiconductors Pages: 599 - 602

8. The nature of manganese luminescence centers in zinc sulfide single crystals

   • M. F. Bulanyi
   • B. A. Polezhaev
   • T. A. Prokof’ev

   Electronic and Optical Properties of Semiconductors Pages: 603 - 605

9. Defect-formation processes in silicon doped with manganese and germanium

   • K. P. Abdurakhmanov
   • Sh. B. Utamuradova
   • R. M. Érgashev

   Electronic and Optical Properties of Semiconductors Pages: 606 - 607

10. Structure of DX-like centers in narrow-band IV–VI semiconductors doped with group-III elements

    • I. I. Ivanchik
    • D. R. Khokhlov
    • N. Romćević

    Electronic and Optical Properties of Semiconductors Pages: 608 - 612

11. Infrared reflectance spectra and Raman spectra of Cu_xAg_1−x GaS₂ solid solutions

    • I. V. Bodnar’

    Electronic and Optical Properties of Semiconductors Pages: 613 - 616

12. Analysis of capacitance-relaxation signals consisting of several exponentials

    • L. S. Berman

    Electronic and Optical Properties of Semiconductors Pages: 617 - 618

13. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

    • K. M. Doshchanov

    Electronic and Optical Properties of Semiconductors Pages: 619 - 624

14. Autosolitons in InSb in a magnetic field

    • I. K. Kamilov
    • A. A. Stepurenko
    • A. S. Kovalev

    Electronic and Optical Properties of Semiconductors Pages: 625 - 628

15. The effect of a strong electric field on the conductivity of a MnGaInS₄: Eu single crystal

    • O. B. Tagiev
    • T. Sh. Gashimova
    • I. M. Askerov

    Electronic and Optical Properties of Semiconductors Pages: 629 - 630

16. Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe

    • N. V. Agrinskaya
    • V. I. Kozub

    Electronic and Optical Properties of Semiconductors Pages: 631 - 635

17. Erbium impurity atoms in silicon

    • V. F. Masterov
    • F. S. Nasredinov
    • M. M. Mezdrogina

    Electronic and Optical Properties of Semiconductors Pages: 636 - 639

18. Oxygen precipitates and the formation of thermal donors in silicon

    • N. V. Vabishchevich
    • D. I. Brinkevich
    • V. S. Prosolovich

    Electronic and Optical Properties of Semiconductors Pages: 640 - 641

19. Induced photopleochroism of p-GaAlAs/p-n-GaAs structures

    • A. Berdinobatov
    • N. Nazarov
    • Yu. V. Rud’

    Semiconductor Structures, Interfaces, and Surfaces Pages: 642 - 645

20. Surface mobility and distribution of electrons in the accumulation layer of Ga₂Se₃/GaAs heterostructures

    • V. F. Antyushin
    • D. A. Vlasov
    • I. N. Arsent’ev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 646 - 648

21. The quantum Hall effect in a wide p-Ge_1−x Si_x/Ge/p-Ge_1−x Si_x potential well

    • Yu. G. Arapov
    • V. N. Neverov
    • O. A. Kuznetsov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 649 - 656

22. Elimination of the electron-phonon interaction in superlattices in a quantizing magnetic field

    • O. V. Kibis

    Low-Dimensional Systems Pages: 657 - 658

23. Deep states in silicon δ-doped GaAs

    • V. Ya. Aleshkin
    • V. M. Danil’tsev
    • V. I. Shashkin

    Low-Dimensional Systems Pages: 659 - 664

24. Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures

    • V. V. Bondarenko
    • V. V. Zabudskii
    • F. F. Sizov

    Low-Dimensional Systems Pages: 665 - 667

25. Degradation of MOS tunnel structures at high current density

    • I. V. Grekhov
    • A. F. Shulekin
    • M. I. Veksler

    Physics of Semiconductor Devices Pages: 668 - 672

26. On the temperature and field dependences of the effective surface mobility in MIS structures

    • V. A. Gergel’
    • M. V. Timofeev
    • A. P. Zelenyi

    The Physics of Semiconductor Devices Pages: 673 - 676

27. Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate

    • A. S. Kyuregyan

    The Physics of Semiconductor Devices Pages: 677 - 682