Boris Petrovich Zakharchenya (on his 70th birthday) Editorial Board of the journal “Semiconductors” Personalia Pages: 573 - 574
The role of macrodefects in electronic and ionic processes in wide-band II–VI semiconductors B. R. Dzhumaev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 575 - 579
One-dimensional structures formed by low-temperature slip of dislocations that act as sources of dislocation absorption and emission in II–VI semiconductor crystals N. I. TarbaevG. A. Shepel’skii Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 580 - 586
Study of the surface structure of tin dioxide layers for gas sensors by atomic-force microscopy M. V. BestaevD. Ts. DimitrovF. Steitz Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 587 - 589
Self-organizing nanoheterostructures in InGaAsP solid solutions L. S. VavilovaA. V. IvanovaN. N. Faleev Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 590 - 593
Pressure-induced insulator-metal transition in electron-irradiated Pb1−x SnxSe (x⩽0.03) alloys E. P. SkipetrovE. A. ZverevaL. A. Skipetrova Electronic and Optical Properties of Semiconductors Pages: 594 - 598
Identifying the parameters of impurity levels in high-resistance semiconductor crystals by means of thermally stimulated currents with dosed illumination of the samples P. G. KasherininovD. G. Matyukhin Electronic and Optical Properties of Semiconductors Pages: 599 - 602
The nature of manganese luminescence centers in zinc sulfide single crystals M. F. BulanyiB. A. PolezhaevT. A. Prokof’ev Electronic and Optical Properties of Semiconductors Pages: 603 - 605
Defect-formation processes in silicon doped with manganese and germanium K. P. AbdurakhmanovSh. B. UtamuradovaR. M. Érgashev Electronic and Optical Properties of Semiconductors Pages: 606 - 607
Structure of DX-like centers in narrow-band IV–VI semiconductors doped with group-III elements I. I. IvanchikD. R. KhokhlovN. Romćević Electronic and Optical Properties of Semiconductors Pages: 608 - 612
Infrared reflectance spectra and Raman spectra of CuxAg1−x GaS2 solid solutions I. V. Bodnar’ Electronic and Optical Properties of Semiconductors Pages: 613 - 616
Analysis of capacitance-relaxation signals consisting of several exponentials L. S. Berman Electronic and Optical Properties of Semiconductors Pages: 617 - 618
Charge-transfer theory in polycrystalline semiconductors with deep impurity centers K. M. Doshchanov Electronic and Optical Properties of Semiconductors Pages: 619 - 624
Autosolitons in InSb in a magnetic field I. K. KamilovA. A. StepurenkoA. S. Kovalev Electronic and Optical Properties of Semiconductors Pages: 625 - 628
The effect of a strong electric field on the conductivity of a MnGaInS4: Eu single crystal O. B. TagievT. Sh. GashimovaI. M. Askerov Electronic and Optical Properties of Semiconductors Pages: 629 - 630
Experimental manifestations of correlated hopping in the temperature dependences of the conductivity of doped CdTe N. V. AgrinskayaV. I. Kozub Electronic and Optical Properties of Semiconductors Pages: 631 - 635
Erbium impurity atoms in silicon V. F. MasterovF. S. NasredinovM. M. Mezdrogina Electronic and Optical Properties of Semiconductors Pages: 636 - 639
Oxygen precipitates and the formation of thermal donors in silicon N. V. VabishchevichD. I. BrinkevichV. S. Prosolovich Electronic and Optical Properties of Semiconductors Pages: 640 - 641
Induced photopleochroism of p-GaAlAs/p-n-GaAs structures A. BerdinobatovN. NazarovYu. V. Rud’ Semiconductor Structures, Interfaces, and Surfaces Pages: 642 - 645
Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures V. F. AntyushinD. A. VlasovI. N. Arsent’ev Semiconductor Structures, Interfaces, and Surfaces Pages: 646 - 648
The quantum Hall effect in a wide p-Ge1−x Six/Ge/p-Ge1−x Six potential well Yu. G. ArapovV. N. NeverovO. A. Kuznetsov Semiconductor Structures, Interfaces, and Surfaces Pages: 649 - 656
Elimination of the electron-phonon interaction in superlattices in a quantizing magnetic field O. V. Kibis Low-Dimensional Systems Pages: 657 - 658
Deep states in silicon δ-doped GaAs V. Ya. AleshkinV. M. Danil’tsevV. I. Shashkin Low-Dimensional Systems Pages: 659 - 664
Electron-phonon interaction and electron mobility in quantum-well type-II PbTe/PbS structures V. V. BondarenkoV. V. ZabudskiiF. F. Sizov Low-Dimensional Systems Pages: 665 - 667
Degradation of MOS tunnel structures at high current density I. V. GrekhovA. F. ShulekinM. I. Veksler Physics of Semiconductor Devices Pages: 668 - 672
On the temperature and field dependences of the effective surface mobility in MIS structures V. A. Gergel’M. V. TimofeevA. P. Zelenyi The Physics of Semiconductor Devices Pages: 673 - 676
Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate A. S. Kyuregyan The Physics of Semiconductor Devices Pages: 677 - 682