1. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

   • M. G. Mil’vidskii
   • V. V. Chaldyshev

   Review Pages: 457 - 465

2. How the type of bombarding ion affects the formation of radiation defects in silicon

   • M. Yu. Barabanenko
   • A. V. Leonov
   • N. M. Omel’yanovskaya

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 466 - 468

3. Creation of vicinal facets on the surface of gallium arsenide with orientations close to (100) under conditions of nonequilibrium mass transfer

   • M. V. Baizer
   • V. Yu. Vitukhin
   • A. I. Rudenko

   Atomic Structure and Non-Electronic Properties of Semiconductors Pages: 469 - 472

4. A quantum-well model and the optical absorption edge in structurally nonuniform a-Si:H-based alloys

   • B. G. Budagyan
   • A. A. Aivazov
   • E. M. Sokolov

   Electronic and Optical Properties of Semiconductors Pages: 473 - 478

5. Stimulated-emission spectrum arising from interband absorption of a picosecond optical pulse in a thin layer of GaAs

   • I. L. Bronevoi
   • A. N. Krivonosov

   Electronic and Optical Properties of Semiconductors Pages: 479 - 483

6. Effect of the diameter of the photoexcited region on the picosecond relaxation of bleaching in a thin layer of GaAs

   • I. L. Bronevoi
   • A. N. Krivonosov

   Electronic and Optical Properties of Semiconductors Pages: 484 - 487

7. Distinctive features of the far-infrared reflection spectra of the semimagnetic semiconductors Hg_1−x Mn_xTe_1−y Se_y

   • A. I. Belogorokhov
   • V. A. Kul’bachinskii
   • I. A. Churilov

   Electronic and Optical Properties of Semiconductors Pages: 488 - 490

8. Effect of ultraviolet irradiation on the luminescence and optical properties of ZnS: Mn films

   • Ya. F. Kononets
   • L. I. Veligura
   • O. A. Ostroukhova

   Electronic and Optical Properties of Semiconductors Pages: 491 - 494

9. Natural nonuniformities in the height of a Schottky barrier

   • V. B. Bondarenko
   • Yu. A. Kudinov
   • V. V. Korablev

   Electronic and Optical Properties of Semiconductors Pages: 495 - 496

10. Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption

    • A. I. Veinger
    • A. G. Zabrodskii
    • G. Biskupski

    Electronic and Optical Properties of Semiconductors Pages: 497 - 503

11. Hopping-induced energy relaxation with allowance for all possible versions of intercenter transitions

    • A. A. Kiselev

    Electronic and Optical Properties of Semiconductors Pages: 504 - 508

12. Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals

    • F. M. Vorobkalo
    • K. D. Glinchuk
    • A. V. Prokhorovich

    Electronic and Optical Properties of Semiconductors Pages: 509 - 512

13. Differential resistance of Au/GaAs_1−x Sb_x tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs_1−x Sb_x

    • T. A. Polyanskaya
    • T. Yu. Allen
    • I. G. Savel’ev

    Electronic and Optical Properties of Semiconductors Pages: 513 - 516

14. Differential resistance of Au/GaAs_1−x Sb_x tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs_1−x Sb_x

    • T. A. Polyanskaya
    • T. Yu. Allen
    • I. G. Savel’ev

    Electronic and Optical Properties of Semiconductors Pages: 517 - 520

15. Binding energy of exciton-impurity complexes in semiconductors with diamond and zinc blende structure

    • S. M. Zubkova
    • E. I. Shul’zinger
    • E. V. Smelyanskaya

    Electronic and Optical Properties of Semiconductors Pages: 521 - 525

16. Heterojunction based on semiconductors with the chain structure TlSe-TlInSe₂

    • I. V. Alekseev

    Semiconductor Structures, Interfaces, and Surfaces Pages: 526 - 528

17. Mechanism of anodic electroluminescence of porous silicon in electrolytes

    • D. N. Goryachev
    • L. V. Belyakov
    • G. Polisskii

    Semiconductor Structures, Interfaces, and Surfaces Pages: 529 - 532

18. Transport properties of magnetoexcitons in coupled quantum wells

    • Yu. E. Lozovik
    • A. M. Ruvinskii

    Low Dimensional Systems Pages: 533 - 538

19. Electron tunneling between two-dimensional electronic systems in a heterostructure with a single doped barrier

    • V. G. Popov
    • Yu. V. Dubrovskii
    • J. Thordson

    Low Dimensional Systems Pages: 539 - 543

20. Numerical analysis of the longitudinal electric current during resonance current flow in a n-GaAs/Al_xGa_1−x As superlattice with doped quantum wells

    • S. I. Borisenko
    • G. F. Karavaev

    Low Dimensional Systems Pages: 544 - 548

21. Investigation of the photovoltage in por-Si/p-Si structures by the pulsed-photovoltage method

    • V. Yu. Timoshenko
    • E. A. Konstantinova
    • T. Dittrich

    Amorphous, Glassy, and Porous Semiconductors Pages: 549 - 554

22. Effect of annealing in an atomic-hydrogen atmosphere on the properties of amorphous hydrated silicon films and the parameters of p-i-n structures based on them

    • M. M. Mezdrogina
    • A. V. Abramov
    • A. V. Patsekin

    Amorphous, Glassy, and Porous Semiconductors Pages: 555 - 561

23. Nonmonotonic character of the growth-temperature dependence of the resistance of polycrystalline silicon films

    • D. V. Shengurov
    • D. A. Pavlov
    • A. F. Khokhlov

    Amorphous, Glassy, and Porous Semiconductors Pages: 562 - 564

24. Characteristic features of the IR spectra of amorphous boron-doped hydrated silicon

    • I. A. Kurova
    • L. I. Belogorokhova
    • A. I. Belogorokhov

    Amorphous, Glassy, and Porous Semiconductors Pages: 565 - 567

25. Charge-carrier exclusion and accumulation intensified by ohmic contacts

    • V. K. Malyutenko
    • G. I. Teslenko
    • V. V. Vainberg

    Physics of Semiconductor Devices Pages: 568 - 571