Effect of impurities with variable valency on the transport phenomena in a quantum well I. I. Lyapilin OriginalPaper Pages: 651 - 654
Charge-carrier lifetime in Hg1−x CdxTe (x=0.22) structures grown by molecular-beam epitaxy A. V. VoitsekhovskiiYu. A. DenisovYu. G. Sidorov OriginalPaper Pages: 655 - 657
Frenkel’-Poole effect for boron impurity in silicon in strong warming electric fields A. M. KozlovV. V. Ryl’kov OriginalPaper Pages: 658 - 660
Measurement of the diffusion length of minority charge carriers using real Schottky barriers N. L. DmitrukO. Yu. BorkovskayaS. V. Mamykin OriginalPaper Pages: 661 - 665
Effect of successive implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1−x Te crystals M. I. IbragimovaN. S. BaryshevI. B. Khaibullin OriginalPaper Pages: 666 - 668
Characteristic features of Raman scattering of light in silicon doped with high krypton doses M. F. GalyautdinovN. V. KurbatovaE. I. Shtyrkov OriginalPaper Pages: 669 - 671
Simulation of heat and mass transfer during growth of silicon carbide single crystals B. A. KirillovA. S. BakinS. N. Solnyshkin OriginalPaper Pages: 672 - 676
Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides V. M. BotnaryukA. V. Koval’Yu. V. Rud’ OriginalPaper Pages: 677 - 680
Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells T. WalterV. Yu. Rud’H. W. Schock OriginalPaper Pages: 681 - 685
High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons V. N. BrudnyiV. A. NovikovA. I. Noifekh OriginalPaper Pages: 686 - 690
Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field O. A. GolikovaA. N. KuznetsovM. M. Kazanin OriginalPaper Pages: 691 - 694
Effect of laser irradiation on the photoconductivity and noise in n-Cdx Hg1−x Te single crystals A. I. VlasenkoV. A. GnatyukP. E. Mozol’ OriginalPaper Pages: 695 - 697
Photoelasticity and quadratic permittivity of wide-gap semiconductors S. Yu. DavydovS. K. Tikhonov OriginalPaper Pages: 698 - 699
Role of spatial localization of a particle during tunneling N. L. Chuprikov OriginalPaper Pages: 700 - 703
Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum V. A. KiselevS. V. PolisadinA. V. Postnikov OriginalPaper Pages: 704 - 706
Electron-hole scattering in p-type silicon with a low charge-carrier injection level T. T. MnatsakanovL. I. PomortsevaV. B. Shuman OriginalPaper Pages: 707 - 709
Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide M. S. IovuE. P. KolomeikoS. D. Shutov OriginalPaper Pages: 710 - 713
Study of submicron deposits in polycrystalline materials using the internal-friction method Yu. N. AndreevN. P. YaroslavtsevYu. M. Tairov OriginalPaper Pages: 714 - 715
Mechanism of electroluminescence of porous silicon in electrolytes D. N. GoryachevO. M. SreseliL. V. Belyakov OriginalPaper Pages: 716 - 718
Excitonic effects in the photoconductivity of quantum-well GaxIn1−x As/InP structures M. F. PanovA. N. Pikhtin OriginalPaper Pages: 719 - 721
Lateral association of vertically coupled quantum dots A. F. Tsatsul’nikovA. Yu. EgorovP. S. Kop’ev OriginalPaper Pages: 722 - 725
Characteristic features of silicon multijunction solar cells with vertical p-n junctions E. G. GukT. A. NaletV. B. Shuman OriginalPaper Pages: 726 - 727
1/f noise in strongly doped n-type GaAs under band-band illumination conditions N. V. D’yakonovaM. E. LevinshteinF. Pascal OriginalPaper Pages: 728 - 732
Longitudinal photoeffect in In0.53Ga0.47As p-n junctions S. V. SlobodchikovKh. M. SalikhovE. V. Russu OriginalPaper Pages: 733 - 734
Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures A. A. LebedevS. OrtolandJ. P. Chante OriginalPaper Pages: 735 - 737
Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon E. I. TerukovA. N. KuznetsovH. Kuehne OriginalPaper Pages: 738 - 739
Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation I. V. KucherenkoL. K. Vodop’yanovV. I. Kadushkin OriginalPaper Pages: 740 - 742
A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface I. A. AvrutskiiV. G. Litovchenko OriginalPaper Pages: 743 - 746
Faraday rotation of light in a microcavity M. A. KaliteevskiiA. V. KavokinP. S. Kop’ev OriginalPaper Pages: 747 - 751
Effect of radiation on the characteristics of MIS structures containing rare-earth oxides Ya. G. FedorenkoL. A. OtavinaA. M. Sverdlova OriginalPaper Pages: 752 - 755
Calculation of a hierarchical PbS-C superlattice in a multiwell model E. Ya. GlushkoV. N. Evteev OriginalPaper Pages: 756 - 758
