Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III–V compounds: GaxIn1−x PyAs1−y A. Yu. EgorovA. R. KovshP. S. Kop’ev Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 989 - 993
Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon V. P. KalinushkinA. N. BuzyninO. V. Astaf’ev Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 994 - 998
Molecular effect in the implantation of light ions in semiconductors I. A. AbroyanL. M. Nikulina Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 999 - 1002
Investigation of the structural properties of GaAs layers grown by molecular-beam epitaxy at low temperatures G. B. GalievR. M. ImamovV. B. Cheglakov Atomic Structure and Non-Electronic Properties of Semiconductors (Mechanical and Thermal Properties, Diffusion, etc.) Pages: 1003 - 1005
Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hν m =1.01 eV in n-type GaAs K. D. GlinchukA. V. Prokhorovich Electronic and Optical Properties Semiconductors Pages: 1006 - 1007
Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity A. G. AndreevA. G. ZabrodskiiI. P. Zvyagin Electronic and Optical Properties Semiconductors Pages: 1008 - 1013
Resonance acceptor states in uniaxially strained semiconductors M. A. OdnoblyudovA. A. PakhomovI. N. Yassievich Electronic and Optical Properties Semiconductors Pages: 1014 - 1020
Nuclear magnetic resonance spectra of 119Sn and 125Te in SnTe and SnTe:Mn V. V. Slyn’koE. I. Slyn’koYu. K. Vygranenko Electronic and Optical Properties Semiconductors Pages: 1021 - 1024
Characterization of macrodefects in pure silcon carbide films using X-ray topography and Raman scattering A. M. DanishevskiiA. S. TregubovaA. A. Lebedev Electronic and Optical Properties Semiconductors Pages: 1025 - 1029
Hole boil-off and the magnetoresitance of the semimagnetic semiconductor Hg1−x MnxTe1−y Sey N. K. LerinmanP. D. Mar’yanchukN. G. Shelushinina Electronic and Optical Properties Semiconductors Pages: 1030 - 1036
Effect of infrared laser radiation on the structure and electrophysical properties of undoped single-crystal InAs S. V. PlyatskoV. P. Klad’ko Electronic and Optical Properties Semiconductors Pages: 1037 - 1040
Effect of superstoichiometric components on the spectral and kinetic characteristics of the luminescence of ZnSe crystals with isovalent impurities O. V. VakulenkoV. N. KravchenkoN. G. Starzhinskii Electronic and Optical Properties Semiconductors Pages: 1041 - 1045
Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures N. L. BazhenovG. G. ZegryaYu. P. Yakovlev Semiconductor Structures, Interfaces, and Surfaces Pages: 1046 - 1048
Effect of deep levels on current excitation in 6H-SiC diodes N. I. KuznetsovJ. A. Edmond Semiconductor Structures, Interfaces, and Surfaces Pages: 1049 - 1052
Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes T. V. BlankYu. A. Gol’dbergE. A. Posse Semiconductor Structures, Interfaces, and Surfaces Pages: 1053 - 1056
A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system G. É. TsyrlinN. P. KorneevaN. N. Ledentsova Semiconductor Structures, Interfaces, and Surfaces Pages: 1057 - 1059
High-temperature irradiation of gallium arsenide V. V. PeshevS. V. Smorodinov Semiconductor Structures, Interfaces, and Surfaces Pages: 1060 - 1061
The role of defects in the formation of local states induced by atoms adsorbed on a semiconductor surface S. Yu. Davydov Semiconductor Structures, Interfaces, and Surfaces Pages: 1062 - 1066
Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy P. V. NeklyudovS. V. IvanovP. S. Kop’ev Reduced-Dimensionality Systems Pages: 1067 - 1070
Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures Yu. B. Vasil’evS. D. SuchalkinP. S. Kop’ev Reduced-Dimensionality Systems Pages: 1071 - 1073
Deep-level transient spectroscopy in InAs/GaAs laser structures with vertically coupled quantum dots M. M. SobolevA. R. KovshN. N. Ledentsov Reduced-Dimensionality Systems Pages: 1074 - 1079
Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy V. M. UstinovA. E. ZhukovP. S. Kop’ev Reduced-Dimensionality Systems Pages: 1080 - 1083
Structure and properties of porous silicon obtained by photoanodization E. V. AstrovaV. V. RatnikovYu. V. Rud’ Amorphous, Glassy, and Porous Semiconductors Pages: 1084 - 1090
Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution S. V. Ordin The Physics of Semiconductor Devices (Photodiodes, Laser, etc.) Pages: 1091 - 1093
Effect of an external bias voltage on the photoelectric properties of silicon MIS/IL structures Ya. S. BudzhakV. Yu. ErokhovI. I. Mel’nik The Physics of Semiconductor Devices (Photodiodes, Laser, etc.) Pages: 1094 - 1098
Erratum: Structure and electrical conductivity of polycrystalline silicon films grown by molecular-beam deposition accompanied by low-energy ion bombardment of the growth surface [Semiconductors 31, 237–240 (March 1997)] D. A. PavlovA. F. KhokhlovV. G. Shengurov Erratum Pages: 1099 - 1099