1. Calculation of Multiply Charged States of Impurity-Defect Centers in Epitaxial Hg_{1 –x}Cd_xTe Layers

   • D. V. Kozlov
   • V. V. Rumyantsev
   • V. I. Gavrilenko

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1369 - 1374

   

2. Effect of Features of the Band Spectrum on the Characteristics of Stimulated Emission in Narrow-Gap Heterostructures with HgCdTe Quantum Wells

   • V. V. Rumyantsev
   • N. S. Kulikov
   • V. I. Gavrilenko

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1375 - 1379

   

3. Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz

   • R. A. Khabibullin
   • N. V. Shchavruk
   • V. I. Gavrilenko

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1380 - 1385

   

4. Magnetooptics of HgTe/CdTe Quantum Wells with Giant Rashba Splitting in Magnetic Fields up to 34 T

   • L. S. Bovkun
   • K. V. Maremyanin
   • V. I. Gavrilenko

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1386 - 1391

   

5. Spinodal Decomposition in InSb/AlAs Heterostructures

   • D. S. Abramkin
   • A. K. Bakarov
   • T. S. Shamirzaev

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1392 - 1397

   

6. The Effect of the Composition of a Carrier Gas during the Growth of a Mn delta-Layer on the Electrical and Magnetic Properties of GaAs Structures

   • I. L. Kalentyeva
   • O. V. Vikhrova
   • I. N. Antonov

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1398 - 1402

   

7. “Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase

   • S. V. Gudina
   • A. S. Bogolyubskii
   • M. V. Yakunin

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1403 - 1406

   

8. Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

   • A. S. Puzanov
   • S. V. Obolenskiy
   • V. A. Kozlov

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1407 - 1411

   

9. Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire

   • P. A. Yunin
   • Yu. N. Drozdov
   • V. A. Grigoryev

   XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1412 - 1415

   

10. Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

    • G. E. Cirlin
    • R. R. Reznik
    • N. V. Kryzhanovskaya

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1416 - 1419

    

11. Experimental Study of Spontaneous-Emission Enhancement in Tamm Plasmon Structures with an Organic Active Region

    • K. M. Morozov
    • K. A. Ivanov
    • M. A. Kaliteevski

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1420 - 1423

    

12. Modification of the Ferromagnetic Properties of Si_{1 –x}Mn_x Thin Films Synthesized by Pulsed Laser Deposition with a Variation in the Buffer-Gas Pressure

    • O. A. Novodvorsky
    • V. A. Mikhalevsky
    • K. I. Maslakov

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1424 - 1427

    

13. MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

    • R. R. Reznik
    • K. P. Kotlyar
    • G. E. Cirlin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1428 - 1431

    

14. Study of the Structural and Morphological Properties of HPHT Diamond Substrates

    • P. A. Yunin
    • P. V. Volkov
    • V. I. Shashkin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1432 - 1436

    

15. Spectroscopy of Single AlInAs and (111)-Oriented InGaAs Quantum Dots

    • I. A. Derebezov
    • V. A. Gaisler
    • S. Reitzenstein

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1437 - 1441

    

16. Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

    • A. V. Novikov
    • D. V. Yurasov
    • A. I. Mashin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1442 - 1447

    

17. Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices

    • D. G. Pavelyev
    • A. P. Vasilev
    • E. S. Obolenskaya

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1448 - 1456

    

18. Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

    • S. A. Rudin
    • Zh. V. Smagina
    • A. V. Dvurechenskii

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1457 - 1461

    

19. Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides

    • A. E. Zhukov
    • N. Yu. Gordeev
    • M. V. Maximov

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1462 - 1467

    

20. Gapless Dirac Electron Mobility and Quantum Time in HgTe Quantum Wells

    • A. A. Dobretsova
    • Z. D. Kvon
    • N. N. Mikhailov

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1468 - 1472

    

21. Plasma Chemical Etching of Gallium Arsenide in C₂F₅Cl-Based Inductively Coupled Plasma

    • A. I. Okhapkin
    • P. A. Yunin
    • V. I. Shashkin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1473 - 1476

    

22. Development of a Physical-Topological Model for the Response of a High-Power Vertical DMOS Transistor to the Effect of Pulsed Gamma-Radiation

    • A. V. Khananova
    • S. V. Obolensky

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1477 - 1483

    

23. Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

    • D. S. Abramkin
    • M. O. Petrushkov
    • T. S. Shamirzaev

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1484 - 1490

    

24. Verification of the Hypothesis on the Thermoelastic Nature of Deformation of a (0001)GaN Layer Grown on the Sapphire a-Cut

    • Yu. N. Drozdov
    • O. I. Khrikin
    • P. A. Yunin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1491 - 1494

    

25. Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

    • K. E. Kudryatvsev
    • A. A. Dubinov
    • Z. F. Krasilnik

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1495 - 1499

    

26. Multiphonon Intracenter Relaxation of Boron Acceptor States in Diamond

    • N. A. Bekin

    XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018 18 October 2018 Pages: 1500 - 1504