Volume 50, Issue 11, November 2016

ISSN: 1063-7826 (Print) 1090-6479 (Online)

In this issue (26 articles)

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  1. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

    G. E. Cirlin, I. V. Shtrom, R. R. Reznik, Yu. B. Samsonenko Pages 1421-1424
  2. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

    A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov Pages 1431-1434
  3. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    A. N. Yablonsky, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin Pages 1435-1438
  4. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

    V. M. Daniltsev, E. V. Demidov, M. N. Drozdov, Yu. N. Drozdov Pages 1439-1442
  5. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Fabrication of MnGa/GaAs contacts for optoelectronics and spintronics applications

    M. V. Dorokhin, D. A. Pavlov, A. I. Bobrov, Yu. A. Danilov Pages 1443-1448
  6. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Germanium laser with a hybrid surface plasmon mode

    A. A. Dubinov Pages 1449-1452
  7. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    On the crystal structure and thermoelectric properties of thin Si1–x Mn x films

    I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveishchev Pages 1453-1457
  8. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

    R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov Pages 1458-1462
  9. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Anharmonic Bloch oscillations of electrons in electrically biased superlattices

    K. A. Ivanov, E. I. Girshova, M. A. Kaliteevski, S. J. Clark Pages 1463-1468
  10. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

    V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov Pages 1475-1478
  11. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Anisotropy of the magnetocapacitance of structures based on PbSnTe:In/BaF2 films

    A. E. Klimov, V. S. Epov Pages 1479-1487
  12. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Method for narrowing the directional pattern of an InGaAs/GaAs/AlGaAs multiwell heterolaser

    N. V. Baydus, S. M. Nekorkin, D. A. Kolpakov, A. V. Ershov Pages 1488-1492
  13. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

    V. T. Shamirzaev, V. A. Gaisler, T. S. Shamirzaev Pages 1493-1498
  14. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

    A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato Pages 1499-1505
  15. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    On the condensation of exciton polaritons in microcavities induced by a magnetic field

    V. P. Kochereshko, D. V. Avdoshina, P. Savvidis, S. I. Tsintzos Pages 1506-1510
  16. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

    D. N. Lobanov, A. V. Novikov, P. A. Yunin, E. V. Skorohodov Pages 1511-1514
  17. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Dynamic generation of spin-wave currents in hybrid structures

    I. I. Lyapilin, M. S. Okorokov Pages 1515-1520
  18. No Access

    XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

    Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

    A. M. Mozharov, D. A. Kudryashov, A. D. Bolshakov, G. E. Cirlin Pages 1521-1525
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