1. Thermal expansion and thermal conductivity of In₂S₃ and CuIn₅S₈ compounds and (CuIn₅S₈)_{1 − x} (In₂S₃) _x alloys

   • I. V. Bodnar

   Electronic Properties of Semiconductors 07 May 2014 Pages: 557 - 561

2. Pyroelectric properties of the wide-gap semiconductor CdS in the low-temperature region

   • Yu. V. Shaldin
   • S. Matyjasik

   Electronic Properties of Semiconductors 07 May 2014 Pages: 562 - 569

3. Negative photoconductivity in films of alloys of II–VI compounds

   • M. A. Jafarov
   • E. F. Nasirov
   • S. A. Mamedova

   Electronic Properties of Semiconductors 07 May 2014 Pages: 570 - 576

4. Influence of bismuth on the optical properties of Ge₂Sb₂Te₅ thin films

   • H. Ph. Nguyen
   • S. A. Kozyukhin
   • A. B. Pevtsov

   Electronic Properties of Semiconductors 07 May 2014 Pages: 577 - 583

5. Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction

   • D. A. Zaitsev
   • R. P. Seisyan

   Surfaces, Interfaces, and Thin Films 07 May 2014 Pages: 584 - 589

6. On the transmission channels and current-voltage characteristics of a double-barrier nanostructure driven by dc electric and electromagnetic fields of arbitrary strength

   • N. V. Tkach
   • Ju. A. Seti

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 590 - 595

7. Intersubband optical absorption coefficients and refractive index changes in spherical hydrogenic antidots

   • S. Davatolhagh
   • R. Khordad
   • A. R. Jafari

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 596 - 601

8. On the features of hydrogen detection by a semiconductor structure grown on a 6H-SiC substrate by the combined method of platinum ion implantation and deposition

   • V. V. Zuev
   • S. N. Grigoriev
   • V. V. Grigoriev

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 602 - 611

9. Anomalous distribution of germanium implanted into a SOI dielectric layer after the annealing of radiation defects

   • E. L. Pankratov
   • O. P. Gus’kova
   • V. M. Vorotyntsev

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 612 - 616

10. Heat capacity of hexagonal boron nitride sheet in Holstein model

    • Hamze Mousavi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 617 - 620

11. Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures

    • R. V. Konakova
    • A. F. Kolomys
    • B. G. Konoplev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 621 - 624

12. Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions

    • P. A. Belevskii
    • M. N. Vinoslavkii
    • B. N. Zvonkov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 625 - 629

13. Size effect in galvanomagnetic phenomena in bismuth films doped with tellurium

    • V. M. Grabov
    • E. V. Demidov
    • E. E. Konstantinova

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 630 - 635

14. The Hall conductivity of graphene

    • Hamze Mousavi
    • Samad Behroozi

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 636 - 639

15. Photoluminescence studies of In_0.7Al_0.3As/In_0.75Ga_0.25As/In_0.7Al_0.3As metamorphic heterostructures on GaAs substrates

    • G. B. Galiev
    • E. A. Klimov
    • P. P. Maltsev

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 May 2014 Pages: 640 - 648

16. Semiconductor behavior of nanocrystalline carbon

    • S. K. Brantov

    Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 May 2014 Pages: 649 - 652

17. Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell

    • M. A. Mintairov
    • V. V. Evstropov
    • V. M. Lantratov

    Physics of Semiconductor Devices 07 May 2014 Pages: 653 - 658

18. Temperature selectivity of the radiation effect on silicon MOS transistors

    • B. P. Koman

    Physics of Semiconductor Devices 07 May 2014 Pages: 659 - 665

19. Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping

    • V. M. Lukashin
    • A. B. Pashkovskii
    • A. A. Kapralova

    Physics of Semiconductor Devices 07 May 2014 Pages: 666 - 674

20. Modeling the efficiency of multijunction solar cells

    • A. B. Sachenko
    • V. P. Kostylyov
    • A. I. Shkrebty

    Physics of Semiconductor Devices 07 May 2014 Pages: 675 - 682

21. On the role of metal contacts in solar cells based on titanium dioxide and di-(isothiocyanate)-bis-(2,2′-bipyridyl-4,4′-dicarboxylate)ruthenium(II)

    • A. A. Logunov
    • A. I. Mashin
    • I. Yu. Stroganov

    Physics of Semiconductor Devices 07 May 2014 Pages: 683 - 685

22. Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions

    • S. O. Slipchenko
    • A. A. Podoskin
    • I. S. Tarasov

    Physics of Semiconductor Devices 07 May 2014 Pages: 686 - 690

23. Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures

    • S. O. Slipchenko
    • A. A. Podoskin
    • P. S. Kop’ev

    Physics of Semiconductor Devices 07 May 2014 Pages: 691 - 696

24. On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range

    • S. O. Slipchenko
    • A. A. Podoskin
    • V. A. Simakov

    Physics of Semiconductor Devices 07 May 2014 Pages: 697 - 699