1. Features of the band structure and conduction mechanisms in the n-HfNiSn semiconductor heavily doped with Ru

   • V. A. Romaka
   • P. Rogl
   • A. M. Horyn

   Electronic Properties of Semiconductors 02 December 2014 Pages: 1545 - 1551

2. Electrical properties of diluted n- and p-Si_{1 − x} Ge _x at small x

   • V. V. Emtsev
   • N. V. Abrosimov
   • G. A. Oganesyan

   Electronic Properties of Semiconductors 02 December 2014 Pages: 1552 - 1556

3. Thermally stimulated 3–15 THz emission at plasmon-phonon frequencies in polar semiconductors

   • J. Požela
   • K. Požela
   • R. Venckevičius

   Spectroscopy, Interaction with Radiation 02 December 2014 Pages: 1557 - 1561

4. Optical properties of CdS-PbS films and the possibility of the photoeffect in the mid-infrared range

   • A. G. Rokakh
   • D. I. Bilenko
   • M. D. Matasov

   Surfaces, Interfaces, and Thin Films 02 December 2014 Pages: 1562 - 1566

5. Nanostructured Ge₂Sb₂Te₅ chalcogenide films produced by laser electrodispersion

   • D. A. Yavsin
   • V. M. Kozhevin
   • A. B. Pevtsov

   Surfaces, Interfaces, and Thin Films 02 December 2014 Pages: 1567 - 1570

6. Doping and defect formation in thermoelectric ZnSb doped with copper

   • L. V. Prokofieva
   • P. P. Konstantinov
   • M. I. Fedorov

   Surfaces, Interfaces, and Thin Films 02 December 2014 Pages: 1571 - 1580

7. On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO₂ produced by thermal oxidation in dry oxygen

   • A. I. Mikhaylov
   • A. V. Afanasiev
   • T. Sledziewski

   Surfaces, Interfaces, and Thin Films 02 December 2014 Pages: 1581 - 1585

8. Specific features of the nonradiative relaxation of Er³⁺ ions in epitaxial Si structures

   • K. E. Kudryavtsev
   • D. I. Kryzhkov
   • Z. F. Krasilnik

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1586 - 1591

9. Magnetooptical study of CdSe/ZnMnSe semimagnetic quantum-dot ensembles with n-type modulation doping

   • I. I. Reshina
   • S. V. Ivanov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1592 - 1599

10. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    • A. Yu. Egorov
    • P. N. Brunkov
    • S. G. Konnikov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1600 - 1604

11. Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on n-Si (100)

    • N. T. Bagraev
    • R. V. Kuzmin
    • V. A. Mashkov

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1605 - 1612

12. Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers

    • K. A. Gonchar
    • L. A. Osminkina
    • V. Yu. Timoshenko

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1613 - 1618

13. Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers

    • A. N. Vinichenko
    • V. P. Gladkov
    • I. S. Vasil’evskii

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1619 - 1625

14. Lasing in microdisks of ultrasmall diameter

    • A. E. Zhukov
    • N. V. Kryzhanovskaya
    • J. Tommila

    Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 02 December 2014 Pages: 1626 - 1630

15. Solar-energy conversion by combined photovoltaic converters with CdTe and CuInSe₂ base layers

    • G. S. Khrypunov
    • E. I. Sokol
    • T. N. Shelest

    Physics of Semiconductor Devices 02 December 2014 Pages: 1631 - 1635

16. Conductance matrix of multiterminal semiconductor devices with edge channels

    • E. Yu. Danilovskii
    • N. T. Bagraev

    Physics of Semiconductor Devices 02 December 2014 Pages: 1636 - 1644

17. Picosecond switching of high-voltage reverse-biased p ⁺-n-n ⁺ structures to the conductive state by pulsed light

    • A. S. Kyuregyan

    Physics of Semiconductor Devices 02 December 2014 Pages: 1645 - 1652

18. High-power LEDs based on InGaAsP/InP heterostructures

    • V. Rakovics
    • A. N. Imenkov
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 02 December 2014 Pages: 1653 - 1656

19. Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

    • M. A. Bobrov
    • S. A. Blokhin
    • V. M. Ustinov

    Physics of Semiconductor Devices 02 December 2014 Pages: 1657 - 1663

20. Improvement of the efficiency of silicon solar cells

    • B. I. Fuks

    Physics of Semiconductor Devices 02 December 2014 Pages: 1664 - 1673

21. Use of double-layer ITO films in reflective contacts for blue and near-UV LEDs

    • L. K. Markov
    • I. P. Smirnova
    • S. I. Pavlov

    Physics of Semiconductor Devices 02 December 2014 Pages: 1674 - 1679

22. Effect of annealing on the kinetic properties and band parameters of Hg_1−x−y Cd _x Eu _y Se semiconductor crystals

    • T. T. Kovalyuk
    • E. V. Maistruk
    • P. D. Maryanchuk

    Fabrication, Treatment, and Testing of Materials and Structures 02 December 2014 Pages: 1680 - 1684

23. On the sol-gel synthesis of strontium-titanate thin films and the prospects of their use in electronics

    • H. Sohrabi Anaraki
    • N. V. Gaponenko
    • A. S. Turtsevich

    Fabrication, Treatment, and Testing of Materials and Structures 02 December 2014 Pages: 1685 - 1687