Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system A. N. AlekseevA. É. ByrnazV. P. Chalyi Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1005 - 1010
The model of self-compensation and pinning of the Fermi level in irradiated semiconductors V. N. BrudnyĭN. G. KolinL. S. Smirnov Electronic and Optical Properties of Semiconductors Pages: 1011 - 1020
On the temperature dependence of the thermoelectric power in disordered semiconductors O. E. ParfenovF. A. Shklyaruk Electronic and Optical Properties of Semiconductors Pages: 1021 - 1026
Charge transport in silver chalcogenides in the region of phase transition S. A. AlievZ. F. AgaevÉ. I. Zul’figarov Electronic and Optical Properties of Semiconductors Pages: 1027 - 1032
On the origin of the 1-eV band in photoluminescence from Cd1−x Zn x Te V. E. SedovO. A. MatveevN. K. Zelenina Electronic and Optical Properties of Semiconductors Pages: 1033 - 1034
Metal-insulator transition in chromium-doped Pb1−x Ge x Te alloys E. P. SkipetrovF. A. PakpurV. E. Slyn’ko Electronic and Optical Properties of Semiconductors Pages: 1035 - 1040
Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity V. A. RomakaYu. V. StadnykA. M. Goryn’ Electronic and Optical Properties of Semiconductors Pages: 1041 - 1047
Out-diffusion of impurity via the kick-out mechanism during gettering O. V. AleksandrovA. A. Krivoruchko Semiconductor Structures, Interfaces, and Surfaces Pages: 1048 - 1055
A study of isotype photosensitive heterostructures (intrinsic oxide)-n-InSe prepared by long-term thermal oxidation Z. D. KovalyukO. N. SydorV. V. Netyaga Semiconductor Structures, Interfaces, and Surfaces Pages: 1056 - 1059
Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures L. P. AvakyantsM. L. BadgutdinovA. V. Feopentov Low-Dimensional Systems Pages: 1060 - 1066
Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates N. G. GalkinD. L. GoroshkoY. Khang Low-Dimensional Systems Pages: 1067 - 1073
Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure J. PoželaK. PoželaV. Jucienė Low-Dimensional Systems Pages: 1074 - 1079
Nonlinear effects in spin relaxation of cavity polaritons D. D. SolnyshkovI. A. ShelykhA. V. Kavokin Low-Dimensional Systems Pages: 1080 - 1091
Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field P. S. AlekseevM. V. YakuninI. N. Yassievich Low-Dimensional Systems Pages: 1092 - 1100
Transient current in thin layers of disordered organic materials under conditions of nonequilibrium charge carrier transport V. R. NikitenkoA. P. Tyutnev Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites Pages: 1101 - 1108
Electroluminescence from nanostructured silicon embedded in anodic alumina S. K. LazaroukD. A. SasinovichV. E. Borisenko Physics of Semiconductor Devices Pages: 1109 - 1112
Combustion and explosion of nanostructured silicon in microsystem devices S. K. LazarukA. V. DolbikV. E. Borisenko Physics of Semiconductor Devices Pages: 1113 - 1116
Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures A. G. ZhdanN. F. KukharskayaG. V. Chucheva Physics of Semiconductor Devices Pages: 1117 - 1125
Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors N. A. Gal’chinaL. M. KoganA. E. Yunovich Physics of Semiconductor Devices Pages: 1126 - 1131
